Nanowatt-Power-Level Automatic Switch Combining ED-CMOS Circuit and LED
In: IEICE transactions on electronics, Jg. 95 (2012), Heft 6, S. 1104-1109
academicJournal
- print, 8 ref
Zugriff:
A nanowatt-power-level automatic switch that combines a multi-Vth CMOS level converter and an LED as a photodiode has been developed for a sensor application. The level converter is a single-input latch-type multi-Vth CMOS circuit featuring the use of an enhancement-mode nMOSFET and a depletion-mode common-gate nMOSFET as a pair of driver transistors. The ED-CMOS level converter cuts the DC current path; and the LED, which generates a high output voltage under illumination, suppresses the leakage current of the depletion-mode common-gate nMOSFET in the ED-CMOS level converter, resulting in nanowatt-order power dissipation. To verify the effectiveness of the ED-CMOS circuit, a prototype level converter was fabricated on a 0.6-μm CMOS process and used in an automatic switch in a wireless mouse. The switch is composed of two LEDs, a current-mirror circuit, the level converter, and a power switch MOSFET. It senses when a hand grabs or releases the mouse and automatically turns the mouse on or off, respectively. The measured power dissipation of the mouse is 3 nW in the standby mode.
Titel: |
Nanowatt-Power-Level Automatic Switch Combining ED-CMOS Circuit and LED
|
---|---|
Autor/in / Beteiligte Person: | UTSUNOMIYA, Fumiyasu ; DOUSEKI, Takakuni |
Link: | |
Zeitschrift: | IEICE transactions on electronics, Jg. 95 (2012), Heft 6, S. 1104-1109 |
Veröffentlichung: | Oxford: Oxford University Press, 2012 |
Medientyp: | academicJournal |
Umfang: | print, 8 ref |
ISSN: | 0916-8524 (print) |
Schlagwort: |
|
Sonstiges: |
|