Temperature Characteristics and Analysis of Monolithic Microwave CMOS Distributed Oscillators With Gm - -Varied Gain Cells and Folded Coplanar Interconnects
In: IEEE transactions on very large scale integration (VLSI) systems, Jg. 20 (2012), Heft 7, S. 1332-1336
Online
academicJournal
- print, 14 ref
Zugriff:
The performance of a novel Monolithic Microwave CMOS Distributed Oscillator is reported over a temperature range of ―25° C to 75°C for the first time, along with an analysis of its design characteristics and its temperature stability. The oscillator is stable over the entire temperature range of 100° C. The monolithic distributed oscillator (DO) is designed and fabricated in an industry standard 0.18 μm CMOS process, using an n-FET-based traveling wave amplifier (TWA), coplanar waveguides (CPW), and a new coplanar interconnect structure called a 'folded CPW'. The measured loss of the folded CPW is 1.259 dB at 10 GHz. The distributed oscillator uses a novel architecture of Gm-varied gain cells and operates at a bias of 1.8 V. The measured oscillation frequency is 11.7 GHz with 6.1 dBm output power and the measured phase noise is ―116.02 dBc/Hz at 1 MHz offset, which represent the best reported power and one of the best phase noise results for silicon DOs with temperature stability.
Titel: |
Temperature Characteristics and Analysis of Monolithic Microwave CMOS Distributed Oscillators With Gm - -Varied Gain Cells and Folded Coplanar Interconnects
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Autor/in / Beteiligte Person: | BHATTACHARYYA, Kalyan ; SZYMANSKI, Ted H |
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Zeitschrift: | IEEE transactions on very large scale integration (VLSI) systems, Jg. 20 (2012), Heft 7, S. 1332-1336 |
Veröffentlichung: | New York, NY: Institute of Electrical and Electronics Engineers, 2012 |
Medientyp: | academicJournal |
Umfang: | print, 14 ref |
ISSN: | 1063-8210 (print) |
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