Temperature Characteristics and Analysis of Monolithic Microwave CMOS Distributed Oscillators With Gm - -Varied Gain Cells and Folded Coplanar Interconnects

BHATTACHARYYA, Kalyan ; SZYMANSKI, Ted H

In: IEEE transactions on very large scale integration (VLSI) systems, Jg. 20 (2012), Heft 7, S. 1332-1336

Online academicJournal - print, 14 ref

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The performance of a novel Monolithic Microwave CMOS Distributed Oscillator is reported over a temperature range of ―25° C to 75°C for the first time, along with an analysis of its design characteristics and its temperature stability. The oscillator is stable over the entire temperature range of 100° C. The monolithic distributed oscillator (DO) is designed and fabricated in an industry standard 0.18 μm CMOS process, using an n-FET-based traveling wave amplifier (TWA), coplanar waveguides (CPW), and a new coplanar interconnect structure called a 'folded CPW'. The measured loss of the folded CPW is 1.259 dB at 10 GHz. The distributed oscillator uses a novel architecture of Gm-varied gain cells and operates at a bias of 1.8 V. The measured oscillation frequency is 11.7 GHz with 6.1 dBm output power and the measured phase noise is ―116.02 dBc/Hz at 1 MHz offset, which represent the best reported power and one of the best phase noise results for silicon DOs with temperature stability.

Titel:	Temperature Characteristics and Analysis of Monolithic Microwave CMOS Distributed Oscillators With Gm - -Varied Gain Cells and Folded Coplanar Interconnects
Autor/in / Beteiligte Person:	BHATTACHARYYA, Kalyan ; SZYMANSKI, Ted H
Link:	Volltext View record from PASCAL Archive
Zeitschrift:	IEEE transactions on very large scale integration (VLSI) systems, Jg. 20 (2012), Heft 7, S. 1332-1336
Veröffentlichung:	New York, NY: Institute of Electrical and Electronics Engineers, 2012
Medientyp:	academicJournal
Umfang:	print, 14 ref
ISSN:	1063-8210 (print)
Schlagwort:	Electronics Electronique Sciences exactes et technologie Exact sciences and technology Sciences appliquees Applied sciences Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Circuits intégrés Integrated circuits Conception. Technologies. Analyse fonctionnement. Essais Design. Technologies. Operation analysis. Testing Circuits électriques, optiques et optoélectroniques Electric, optical and optoelectronic circuits Propriétés des circuits Circuit properties Circuits électroniques Electronic circuits Oscillateurs, résonateurs, synthétiseurs Oscillators, resonators, synthetizers Circuits hyperfréquences, circuits intégrés hyperfréquences, lignes de transmission hyperfréquences, circuits à ondes submillimétriques Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Amplificateur onde progressive Travelling wave amplifier Amplificador onda progresiva Bruit phase Phase noise Ruido fase Canal n n channel Caractéristique thermique Thermal characteristic Característica térmica Circuit intégré hyperfréquence Microwave integrated circuits Circuit intégré monolithique Monolithic integrated circuit Circuito integrado monolítico Circuit intégré Integrated circuit Circuito integrado Comportement thermique Thermal behavior Comportamiento térmico Evaluation performance Performance evaluation Evaluación prestación Fréquence oscillation Oscillation frequency Frecuencia oscilación Gain Ganancia Guide onde coplanaire Coplanar waveguides Interconnexion Interconnection Interconexión Oscillateur hyperfréquence Microwave oscillator Oscilador hiperfrecuencia Oscillateur état solide Solid state oscillator Oscilador estado sólido Puissance sortie Output power Potencia salida Résonateur hyperfréquence Microwave resonator Resonador hiperfrecuencia Silicium Silicon Silicio Stabilité thermique Thermal stability Estabilidad térmica Technologie MOS complémentaire Complementary MOS technology Tecnología MOS complementario Transistor effet champ Field effect transistor Transistor efecto campo CMOS coplanar waveguides distributed oscillator microwave integrated circuits (ICs) thermal measurement thermal phenomena traveling wave amplifier
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Article File Description: text Language: English Author Affiliations: Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India ; Electrical and Computer Engineering Department, McMaster University, Hamilton, ON L8S 4K1, Canada Rights: Copyright 2015 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Electronics

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