CMOS-Compatible Generation of Self-Organized 3-D Ge Quantum Dot Array for Photonic and Thermoelectric Applications
In: IEEE transactions on nanotechnology, Jg. 11 (2012), Heft 4, S. 657-660
Online
academicJournal
- print, 16 ref
Zugriff:
We demonstrate a CMOS-compatible scheme, selective oxidation of SiGe pillars, for creating well-organized 3-D Ge quantum dot (QD) array by guiding QDs migration along the oxidation path and thus placing them on targeted locations where the ultimate oxidation occurs. Stacked QDs exhibit tunable luminescence over the visible and possess low thermal conductivity, showing promise for nanophotonic and energy conversion devices.
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CMOS-Compatible Generation of Self-Organized 3-D Ge Quantum Dot Array for Photonic and Thermoelectric Applications
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Autor/in / Beteiligte Person: | WANG, Ching-Chi ; CHEN, Kuan-Hung ; LI, Pei-Wen ; CHEN, Inn-Hao ; LAI, Wei-Ting ; CHANG, Hung-Tai ; CHEN, Wen-Yen ; HSU, Jung-Chao ; LEE, Shen-Wei ; HSU, Tzu-Min ; HUNG, Ming-Tsung |
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Zeitschrift: | IEEE transactions on nanotechnology, Jg. 11 (2012), Heft 4, S. 657-660 |
Veröffentlichung: | New York, NY: Institute of Electrical and Electronics Engineers, 2012 |
Medientyp: | academicJournal |
Umfang: | print, 16 ref |
ISSN: | 1536-125X (print) |
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