Einzeltreffer — DigiBib

Two V-band low-noise amplifiers (LNAs) with excellent linearity and noise figure (NF) using 90-nm CMOS technology are demonstrated in this paper, employing parasitic-insensitive linearization topologies, i.e., cascode and common source, for comparative purposes. To improve the linearity without deteriorating the NF, the 54-69-GHz cascode LNA is linearized by the body-biased post-distortion, and the 58-65-GHz common-source LNA is linearized by the distributed derivative superposition. Using these parasitic-insensitive linearization methods at millimeter-wave frequency, the cascode LNA can achieve an IIP3 of 11 dBm and an NF of 3.78 dB at 68.5 GHz with a gain of 13.2 dB and 14.4-mW dc power. The common-source LNA has an IIP3 of 0 dBm and an NF of 4.1 dB at 64.5 GHz with a gain of 11.3 dB and 10.8-mW dc power. To the best of our knowledge, the proposed cascode LNA has up to 11-dBm IIP3 performance and the highest figure-of-merit of 156.2, among all reported V -band LNAs.

Titel:	Parasitic-Insensitive Linearization Methods for 60-GHz 90-nm CMOS LNAs
Autor/in / Beteiligte Person:	LI, Wei-Tsung ; TSAI, Jeng-Han ; YANG, Hong-Yuan ; CHOU, Wei-Hung ; GEA, Shyh-Buu ; LU, Hsin-Chia ; HUANG, Tian-Wei
Link:	Volltext View record from PASCAL Archive
Zeitschrift:	IEEE transactions on microwave theory and techniques, Jg. 60 (2012), Heft 8, S. 2512-2523
Veröffentlichung:	New York, NY: Institute of Electrical and Electronics Engineers, 2012
Medientyp:	academicJournal
Umfang:	print, 33 ref
ISSN:	0018-9480 (print)
Schlagwort:	Electronics Electronique Optics Optique Telecommunications Télécommunications Sciences exactes et technologie Exact sciences and technology Sciences appliquees Applied sciences Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Circuits intégrés Integrated circuits Conception. Technologies. Analyse fonctionnement. Essais Design. Technologies. Operation analysis. Testing Circuits électriques, optiques et optoélectroniques Electric, optical and optoelectronic circuits Propriétés des circuits Circuit properties Circuits électroniques Electronic circuits Amplificateurs Amplifiers Circuits hyperfréquences, circuits intégrés hyperfréquences, lignes de transmission hyperfréquences, circuits à ondes submillimétriques Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Hyperfréquence Microwave Hiperfrecuencia Amplificateur faible bruit Low noise amplifier Amplificador bajo ruido Bande V V band Banda V Circuit MMIC MMIC Circuit intégré hyperfréquence Microwave integrated circuits Circuit intégré monolithique Monolithic integrated circuit Circuito integrado monolítico Evaluation performance Performance evaluation Evaluación prestación Facteur mérite Figure of merit Factor mérito Figure bruit Noise figure Figura ruido Gain Ganancia Linéarisation Linearization Linearización Linéarité Linearity Linearidad Montage cascode Cascode connection Montaje cascode Montage source commune Common source configuration Configuración de surtidor común Onde millimétrique Millimetric wave Onda milimétrica Ordre 3 Third order Orden 3 Technologie MOS complémentaire Complementary MOS technology Tecnología MOS complementario Point d'interception Intercept point -CMOS 60 GHz high linearity low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC)
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Article File Description: text Language: English Author Affiliations: Department of the Electrical Engineering and Graduate Institute of Communication Engineering, National Taiwan University, Taipei 106, Tawain, Province of China ; Department of Applied Electronics Technology, National Taiwan Normal University, Taipei 106, Tawain, Province of China ; High Tech Computer Corporation (HTC), New Taipei City 231, Tawain, Province of China ; Intellectual Property Office, Ministry of Economic Affairs, New Taipei City 231, Tawain, Province of China ; Department of Electrical Engineering, Graduate Institute of Electronics Engineering, and Graduate Institute of Communication Engineering, National Taiwan University, Taipei 106, Tawain, Province of China Rights: Copyright 2015 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Electronics

Klicken Sie ein Format an und speichern Sie dann die Daten oder geben Sie eine Empfänger-Adresse ein und lassen Sie sich per Email zusenden.

BibTeX Citavi, JabRef, u.a.
(Literaturverwaltung)

PDF kein Volltext!
(Merkzettel, Notizen)

RIS Endnote, Citavi u.a.
(Literaturverwaltung)

MODS
(XML zur Weiterverarbeitung)

oder

Wählen Sie das für Sie passende Zitationsformat und kopieren Sie es dann in die Zwischenablage, lassen es sich per Mail zusenden oder speichern es als PDF-Datei.

Gewünschter Zitations-Stil:

oder

Bitte prüfen Sie, ob die Zitation formal korrekt ist, bevor Sie sie in einer Arbeit verwenden. Benutzen Sie gegebenenfalls den "Exportieren"-Dialog, wenn Sie ein Literaturverwaltungsprogramm verwenden und die Zitat-Angaben selbst formatieren wollen.

Parasitic-Insensitive Linearization Methods for 60-GHz 90-nm CMOS LNAs