Effects of LaNiO3 conductive buffer layer on the structural and electrical characteristics of Ba0.4Sr0.6TiO3 thin films prepared by RF magnetron sputtering
In: Japanese journal of applied physics, Jg. 36 (1997), Heft 3A, S. 1164-1168
academicJournal
- print, 17 ref 1
Zugriff:
Sputter-deposited LaNiO3 (LNO) was used as a conductive buffer layer for the deposition of 80-nm-thick Ba0.4Sr0.6TiO3 (BST) thin films on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering. Smooth and highly (100)-oriented perovskite films of BST were grown on the (100)-textured LNO by deposition at temperatures ≥200°C. However, a relatively rough and weakly crystallized BST film was obtained by deposition directly on Pt/Ti/SiO2/Si substrates at 500°C. Satisfactory dielectric constants of 160 to 320 were achieved for films deposited on LNO at temperatures from 350 to 550°C, while a low dielectric constant of 120 was obtained for the film deposited on Pt at 500°C. All the films in a Pt/BST/LNO or Pt/BST/Pt capacitor configuration basically showed a similar ohmic conduction characteristic of low conductivity, in low bias regime up to a transition voltage around 1-3V, and beyond that a nonohmic conduction with current rapidly increasing against the applied bias occurred. However, the films deposited on LNO would have a more moderate nonohmic conduction than that of the film deposited on Pt.
Titel: |
Effects of LaNiO3 conductive buffer layer on the structural and electrical characteristics of Ba0.4Sr0.6TiO3 thin films prepared by RF magnetron sputtering
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Autor/in / Beteiligte Person: | WU, C.-M ; WU, T.-B |
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Zeitschrift: | Japanese journal of applied physics, Jg. 36 (1997), Heft 3A, S. 1164-1168 |
Veröffentlichung: | Tokyo: Japanese journal of applied physics, 1997 |
Medientyp: | academicJournal |
Umfang: | print, 17 ref 1 |
ISSN: | 0021-4922 (print) |
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