Effect of B2H6 Plasma Doping on the Shallow Trench Isolation in CMOS Image Sensor Device
In: IEEE electron device letters, Jg. 33 (2012), Heft 11, S. 1580-1582
Online
academicJournal
- print, 13 ref
Zugriff:
We evaluate the electrical and optical properties of a complementary metal―oxide―semiconductor (CMOS) image sensor with shallow trench isolation (STI) sidewall doped by plasma-doping (PLAD) method using B2H6. PLAD can be used to fabricate an STI sidewall junction depth shallower than that fabricated using conventional beamline ion implantation. The use of B2H6 for the STI sidewall doping by PLAD facilitates the concurrent doping of numerous hydrogen atoms around the STI sidewall, thus improving the optical properties, such as temporal noise, crosstalk, and saturation, of the 1.75-μm pixel CMOS image sensor. Although the dark current performance was slightly degraded, it could be improved under more heavily doped conditions.
Titel: |
Effect of B2H6 Plasma Doping on the Shallow Trench Isolation in CMOS Image Sensor Device
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Autor/in / Beteiligte Person: | SUNG GYU, PYO ; JI HWAN, PARK ; YANG, Taek-Seung |
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Zeitschrift: | IEEE electron device letters, Jg. 33 (2012), Heft 11, S. 1580-1582 |
Veröffentlichung: | New York, NY: Institute of Electrical and Electronics Engineers, 2012 |
Medientyp: | academicJournal |
Umfang: | print, 13 ref |
ISSN: | 0741-3106 (print) |
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