The piezoelectronic transistor: A nanoactuator-based post-CMOS digital switch with high speed and low power : Thin-film piezoelectric MEMS
In: MRS bulletin, Jg. 37 (2012), Heft 11, S. 1071-1076
Online
academicJournal
- print, 26 ref
Zugriff:
Moore's law of transistor scaling, the exponential increase in the number of complementary metal oxide semiconductor (CMOS) transistors per unit area, continues unabated; however, computer clock speeds have remained frozen since 2003. The development of a new digital switch, the piezoelectronic transistor (PET), is designed to circumvent the speed and power limitations of the CMOS transistor. The PET operates on a novel principle: an electrical input is transduced into an acoustic pulse by a piezoelectric element which, in turn, is used to drive a continuous insulator-to-metal transition in a piezoresistive element, thus switching on the device. Performance is enabled by the use of key high response materials, a relaxor piezoelectric, and a rare-earth chalcogenide piezoresistor. Theory and simulation predict, using bulk material properties, that PETs can operate at one-tenth the present voltage of CMOS technology and consuming 100 times less power while running at multi-GHz clock speeds. A program to fabricate prototype PET devices is under way.
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The piezoelectronic transistor: A nanoactuator-based post-CMOS digital switch with high speed and low power : Thin-film piezoelectric MEMS
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Autor/in / Beteiligte Person: | NEWNS, D. M ; ELMEGREEN, B. G ; LIU, X.-H ; MARTYNA, G. J |
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Zeitschrift: | MRS bulletin, Jg. 37 (2012), Heft 11, S. 1071-1076 |
Veröffentlichung: | Warrendale, PA: Materials Research Society, 2012 |
Medientyp: | academicJournal |
Umfang: | print, 26 ref |
ISSN: | 0883-7694 (print) |
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