60-GHz transmit/receive switch using a p―n diode and MOS transistors in 130-nm CMOS
In: Solid-state electronics, Jg. 79 (2013), S. 79-86
academicJournal
- print, 30 ref
Zugriff:
A single-pole-double-throw transmit/receive switch using a shunt p-n diode and shunt NMOS transistors in 130-nm CMOS technology that operates around 60 GHz is reported. The switch exhibits insertion loss of ∼2 and 3 dB for TX and RX mode, respectively at 60 GHz. The diode has ∼6X lower parasitic capacitance for given on resistance compared to NMOS transistors in the CMOS technology, which results in lower insertion loss. Furthermore, the p-n diode has greater than 11-V breakdown voltage, which enables the switch to attain higher than 18-dBm measured input 1-dB compression point. This is the highest among CMOS millimeter-wave switches reported up to date. Transmit to receive port isolation of the switch is ∼20 dB at 60 GHz.
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60-GHz transmit/receive switch using a p―n diode and MOS transistors in 130-nm CMOS
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Autor/in / Beteiligte Person: | CHUYING, MAO ; O, Kenneth K |
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Zeitschrift: | Solid-state electronics, Jg. 79 (2013), S. 79-86 |
Veröffentlichung: | Kidlington: Elsevier, 2013 |
Medientyp: | academicJournal |
Umfang: | print, 30 ref |
ISSN: | 0038-1101 (print) |
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