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Fabrication and characterization of integrated hybrid complementary metal oxide semiconductor devices (CMOS) using 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PC) and cadmium sulfide (CdS) as the active layers deposited using solution based processes are demonstrated. The n- and p-type thin film transistors (TFTs), inverters, and NAND gate devices were fabricated using photolithography-based techniques. The hybrid CMOS technology demonstrated is compatible with large-area and mechanically flexible substrates given the low temperature processing (<100°C) and scalable design. The integrated n-and p-type devices show saturation mobilities of 15 and 0.02 cm2/V s, respectively. The inverters exhibited a DC gain of ≈52 V/V with full rail-to-rail switching. The NAND logic gates switch rail-to-rail with a transition point of VDD/2.

Titel:	Hybrid CMOS thin-film devices based on solution-processed CdS n-TFTs and TIPS-Pentacene p-TFTs
Autor/in / Beteiligte Person:	PEREZ, Michael R ; MEJIA, Israel ; SALAS-VILLASENOR, Ana L ; STIEGLER, Harvey ; TRACHTENBERG, Isaac ; GNADE, Bruce E ; QUEVEDO-LOPEZ, Manuel A
Link:	View record from PASCAL Archive
Zeitschrift:	Organic electronics (Print), Jg. 13 (2012), Heft 12, S. 3045-3049
Veröffentlichung:	Amsterdam: Elsevier, 2012
Medientyp:	academicJournal
Umfang:	print, 25 ref
ISSN:	1566-1199 (print)
Schlagwort:	Electronics Electronique Condensed state physics Physique de l'état condensé Sciences exactes et technologie Exact sciences and technology Physique Physics Etat condense: structure electronique, proprietes electriques, magnetiques et optiques Condensed matter: electronic structure, electrical, magnetic, and optical properties Structure électronique et propriétés électriques des surfaces, interfaces, couches minces et structures de basse dimensionnalité Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Transport électronique dans des structures à interface Electronic transport in interface structures Structures métal-isolant-semiconducteur (incluant les structures semiconducteur-isolant) Metal-insulator-semiconductor structures (including semiconductor-to-insulator) Sciences appliquees Applied sciences Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Dispositifs à structure composée Compound structure devices Transistors Circuits intégrés Integrated circuits Conception. Technologies. Analyse fonctionnement. Essais Design. Technologies. Operation analysis. Testing Circuit logique Logic circuit Circuito lógico Composé II-VI II-VI compound Compuesto II-VI Basse température Low temperature Baja temperatura Caractéristique rail à rail Rail to rail characteristics Característica rail to rail Circuit NON ET NAND circuit Circuito NOY Commutateur Selector switch Conmutador Commutation Switching Conmutación Couche active Active layer Capa activa Courant continu Direct current Corriente contínua Dispositif couche mince Thin film device Dispositivo capa delgada Dérivé du pentacène Pentacene derivatives Pentaceno derivado Extensibilité Scalability Estensibilidad Fabrication microélectronique Microelectronic fabrication Fabricación microeléctrica Gain courant Current gain Ganancia corriente Méthode en solution Growth from solution Método en solución Onduleur Inverter Ondulador Photolithographie Photolithography Fotolitografía Porte logique Logic gate Puerta lógica Semiconducteur organique Organic semiconductors Semiconducteur type n n type semiconductor Semiconductor tipo n Semiconducteur type p p type semiconductor Semiconductor tipo p Silane organique Organic silane Silano orgánico Structure MOS MOS structure Estructura MOS Structure flexible Flexible structure Estructura flexible Sulfure de cadmium Cadmium sulfide Cadmio sulfuro Technologie MOS complémentaire Complementary MOS technology Tecnología MOS complementario Traitement matériau Material processing Tratamiento material Transistor couche mince Thin film transistor Transistor capa delgada 8530T 8540H CdS CMOS Organic semiconductor Solution based TIPS-Pentacene Thin-film transistors Time: 8535
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Article File Description: text Language: English Author Affiliations: Department of Chemistry, The University of Texas at Dallas, Richardson, TX 75080, United States ; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson. TX 75080, United States Rights: Copyright 2014 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Electronics ; Physics of condensed state: electronic structure, electrical, magnetic and optical properties

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Hybrid CMOS thin-film devices based on solution-processed CdS n-TFTs and TIPS-Pentacene p-TFTs