Engineering buried oxide in dopant-segregated Schottky barrier SOI MOSFET for nanoscale CMOS circuits
In: Microelectronics and reliability, Jg. 53 (2013), Heft 3, S. 349-355
academicJournal
- print, 20 ref
Zugriff:
In this paper CMOS logic circuit performance of dopant-segregated Schottky barrier (DSSB) SOI and δ-doped partially insulated DSSB SOI (DSSB Pi-OX-δ) MOSFETs has been explored by extensive mixed-mode device/circuit simulations. It has been found that, the presence of partial buried oxide and δ-doping in an n-channel and p-channel DSSB Pi-OX-δ MOSFETs not only suppresses the off-state leakage, short-channel effects, self-heating effect and the process induced threshold voltage variability but also improves the on-state drive current of the devices. Further, although switching energy in the CMOS inverter, NAND and NOR gates based on DSSB SOI and DSSB Pi-OX-δ MOSFETs is almost equal, static power dissipation and propagation delay in the logic gates based on DSSB Pi-OX-δ MOSFET are reduced by ∼75% and ∼20% respectively over the logic gates based on DSSB SOI evice. Thus, employing partial buried oxide and 8-doping under the channel of DSSB SOI MOSFET not only eliminates the potential weaknesses of this device but also makes it a suitable candidate for nanoscale CMOS logic circuits.
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Engineering buried oxide in dopant-segregated Schottky barrier SOI MOSFET for nanoscale CMOS circuits
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Autor/in / Beteiligte Person: | PATIL, Ganesh C ; QURESHI, S |
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Zeitschrift: | Microelectronics and reliability, Jg. 53 (2013), Heft 3, S. 349-355 |
Veröffentlichung: | Kidlington: Elsevier, 2013 |
Medientyp: | academicJournal |
Umfang: | print, 20 ref |
ISSN: | 0026-2714 (print) |
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