Preparation of silicon oxide films by CVD using fluorotriethoxysilane
In: Nippon seramikkusu kyokai gakujutsu ronbunshi, Jg. 105 (1997), Heft 5, S. 433-435
academicJournal
- print, 12 ref
Zugriff:
Preparation of silicon oxide films was tried by chemical vapor deposition (CVD) at substrate temperatures (Tsub) from 298 to 308 K and pressures in CVD chamber (Pchm) from 4 to 13 kPa. Fluorotriethoxysilane (FTES) and water which were vaporized in thermostatic oil baths were used as source materials. Dense films were obtained at Tsub below 303 K and Pchm above 6.7 kPa, and the deposition rate was seriously affected by the bath temperature to evaporate water. Deposited films were examined by infrared reflection spectroscopy and X-ray photoelectron spectroscopy, and it was found that the deposits contained fluorine. The relation between current density and electric field of dense films was also examined.
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Preparation of silicon oxide films by CVD using fluorotriethoxysilane
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Autor/in / Beteiligte Person: | MUKAIDA, M ; YOSHITANI, M ; WAKABAYASHI, S.-I ; IMAI, Y |
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Zeitschrift: | Nippon seramikkusu kyokai gakujutsu ronbunshi, Jg. 105 (1997), Heft 5, S. 433-435 |
Veröffentlichung: | Tokyo: Nippon seramikkusu kyokai, 1997 |
Medientyp: | academicJournal |
Umfang: | print, 12 ref |
ISSN: | 0914-5400 (print) |
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