Phase Discrimination through Oxidant Selection in Low-Temperature Atomic Layer Deposition of Crystalline Iron Oxides
In: Langmuir, Jg. 29 (2013), Heft 10, S. 3439-3445
academicJournal
- print, 51 ref
Zugriff:
Control over the oxidation state and crystalline phase of thin-film iron oxides was achieved by low-temperature atomic layer deposition (ALD), utilizing a novel iron precursor, bis(2,4-methylpentadienyl)iron. This low-temperature (T = 120 °C) route to conformal deposition of crystalline Fe3O4 or α-Fe2O3 thin films is determined by the choice of oxygen source selected for the second surface half-reaction. The approach employs ozone to produce fully oxidized processes show milder oxidant, H2O2, to generate the Fe2+/Fe3+ spinel, Fe3O4. Both processes show self-limiting surface reactions and deposition rates of at least 0.6 Å/cycle, a significantly high growth rate at such mild conditions. We utilized this process to prepare conformal iron oxide thin films on a porous framework, for which α-Fe2O3 is active for photocatalytic water splitting.
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Phase Discrimination through Oxidant Selection in Low-Temperature Atomic Layer Deposition of Crystalline Iron Oxides
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Autor/in / Beteiligte Person: | RIHA, Shannon C ; RACOWSKI, Joy M ; LANCI, Michael P ; KLUG, Jeffrey A ; HOCK, Adam S ; MARTINSON, Alex B. F |
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Zeitschrift: | Langmuir, Jg. 29 (2013), Heft 10, S. 3439-3445 |
Veröffentlichung: | Washington, DC: American Chemical Society, 2013 |
Medientyp: | academicJournal |
Umfang: | print, 51 ref |
ISSN: | 0743-7463 (print) |
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