A 60-GHz Power Amplifier Design Using Dual-Radial Symmetric Architecture in 90-nm Low-Power CMOS
In: IEEE transactions on microwave theory and techniques, Jg. 61 (2013), Heft 3, S. 1280-1290
Online
academicJournal
- print, 40 ref
Zugriff:
An innovative on-chip 3-D power amplifier (PA) architecture for M-way power-combined CMOS PAs by using the proposed dual-radial symmetric architecture is presented. It provides design freedom of impedance selection of power device in transformer-based millimeter-wave PA design. This idea also makes distinguished breakthrough to the raditional 2-D PA architecture without compromising symmet y and compact size of layout. To demonstrate the feasibility of this idea, a 60-GHz PA is fabricated in 90-nm low-power CMOS process. It is also equipped with multi-mode operation. It achieves an output power of 18.5 dBm and a power-added efficiency of 10.2% with 1.2-V supply voltage. At 6-dB/10-dB power back-off operation, the drain efficiencies of power stage can be enhanced from 5.9%/2.4% to 11.9%/8%, resnectively, by enabling the multi-mode operation.
Titel: |
A 60-GHz Power Amplifier Design Using Dual-Radial Symmetric Architecture in 90-nm Low-Power CMOS
|
---|---|
Autor/in / Beteiligte Person: | YEH, Jin-Fu ; TSAI, Jeng-Han ; HUANG, Tian-Wei |
Link: | |
Zeitschrift: | IEEE transactions on microwave theory and techniques, Jg. 61 (2013), Heft 3, S. 1280-1290 |
Veröffentlichung: | New York, NY: Institute of Electrical and Electronics Engineers, 2013 |
Medientyp: | academicJournal |
Umfang: | print, 40 ref |
ISSN: | 0018-9480 (print) |
Schlagwort: |
|
Sonstiges: |
|