Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer : Fundamentals and Applications of Advanced Semiconductor Devices
In: IEICE transactions on electronics, Jg. 96 (2013), Heft 5, S. 674-679
academicJournal
- print, 17 ref
Zugriff:
As means to control interface reactions between HfO2 and Ge(100), chemical vapor deposition (CVD) of ultrathin Ta-rich oxide using Tri (tert-butoxy) (tert-butylimido) tantalum (Ta-TTT) on chemically-cleaned Ge(100) has been conducted prior to atomic-layer controlled CVD of HfO2 using tetrakis (ethylmethylamino) hafnium (TEMA-Hf) and 03. The XPS analysis of chemical bonding features of the samples after the post deposition N2 annealing at 300°C confirms the formation of TaGexOy and the suppression of the interfacial GeO2 layer growth. The energy band structure of HfO2/TaGexOy/Ge was determined by the combination of the energy bandgaps of HfO2 and TaGexOy measured from energy loss signals of O 1s photoelectrons and from optical absorption spectra and the valence band offsets at each interface measured from valence band spectra. From the capacitance-voltage (C-V) curves of Pt-gate MIS capacitors with different HfO2 thicknesses, the thickness reduction of TaGexOy with a relative dielectric constant of 9 is a key to obtain an equivalent SiO2 thickness (EOT) below 0.7 nm.
Titel: |
Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer : Fundamentals and Applications of Advanced Semiconductor Devices
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Autor/in / Beteiligte Person: | HASHIMOTO, Kuniaki ; OHTA, Akio ; MURAKAMI, Hideki ; HIGASHI, Seiichiro ; MIYAZAKI, Seiichi |
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Zeitschrift: | IEICE transactions on electronics, Jg. 96 (2013), Heft 5, S. 674-679 |
Veröffentlichung: | Oxford: Oxford University Press, 2013 |
Medientyp: | academicJournal |
Umfang: | print, 17 ref |
ISSN: | 0916-8524 (print) |
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