Low-noise and high-gain wideband LNA with gm-boosting technique
In: Electronics letters, Jg. 49 (2013), Heft 18, S. 1126-1128
Online
academicJournal
- print, 8 ref
Zugriff:
A broadband low-noise amplifier (LNA) is proposed. The active gm-boosting technique is utilised to reduce the common-gate (CG) LNA noise figure and improve gain. An implemented prototype using 0.13 μm CMOS technology is evaluated using on-wafer probing. S11 and S22 are below ― 10 dB across 0.1―5 GHz. Measurements show a power gain of 18.3 dB with a ― 3 dB bandwidth from 100 MHz to 2.1 GHz and an IIP3 of ― 7 dBm at 2 GHz. The measured noise figure is better than 2.5 dB below 2.1 GHz, better than 4.5 dB below 5 GHz and at 500 MHz it obtains its minimum value 1.8 dB. The LNA consumes 14 mW from 1.5 V supply and occupies an area of 0.04 mm2.
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Low-noise and high-gain wideband LNA with gm-boosting technique
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Autor/in / Beteiligte Person: | ZHIQUN, LI ; LIANG, CHEN ; ZENGQI, WANG ; CHENJIAN, WU ; JIA, CAO ; MENG, ZHANG ; CHONG, WANG ; YANG, LIU ; ZHIGONG, WANG |
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Zeitschrift: | Electronics letters, Jg. 49 (2013), Heft 18, S. 1126-1128 |
Veröffentlichung: | Stevenage: Institution of Engineering and Technology, 2013 |
Medientyp: | academicJournal |
Umfang: | print, 8 ref |
ISSN: | 0013-5194 (print) |
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