New High-Density Differential Split Gate Flash Memory With Self-Boosting Function
In: IEEE electron device letters, Jg. 34 (2013), Heft 9, S. 1127-1129
Online
academicJournal
- print, 19 ref
Zugriff:
This letter presents a novel high density differential split gate flash memory with self-boosting function realized by 0.18-μm embedded memory technology from Taiwan Semiconductor Manufacturing Company. The cell has a pair of symmetric floating gates to perform differential read for storage electrons in the dual gate. Besides, a simple and nondecoding self-boosting operation is built in to automatically boost threshold levels of the symmetric cells to prevent a long-term charge loss or data degradation problem. Since the cell process and tip erase structure are totally inherited from the proven split-gate flash technology, the highly efficient program and erase performances are remained in the new cell. This implemented self-boosting operation provides a promising solution for reliable embedded memory for advanced CMOS technology.
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New High-Density Differential Split Gate Flash Memory With Self-Boosting Function
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Autor/in / Beteiligte Person: | WEN CHAO, SHEN ; LEE, Te-Liang ; PAN, Hsin-Wei ; YANG, Zhi-Sung ; CHIH, Yue-Der ; LIEN, Chiu-Wang ; KING, Ya-Chin ; CHRONG JUNG, LIN |
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Zeitschrift: | IEEE electron device letters, Jg. 34 (2013), Heft 9, S. 1127-1129 |
Veröffentlichung: | New York, NY: Institute of Electrical and Electronics Engineers, 2013 |
Medientyp: | academicJournal |
Umfang: | print, 19 ref |
ISSN: | 0741-3106 (print) |
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