Control of IMD Asymmetry of CMOS Power Amplifier for Broadband Operation Using Wideband Signal
In: IEEE transactions on microwave theory and techniques, Jg. 61 (2013), Heft 10, S. 3753-3762
Online
academicJournal
- print, 32 ref
Zugriff:
A fully integrated linear CMOS power amplifier (PA) for the broadband operation is developed for handset applications. This amplifier can handle a wideband signal. To achieve broadband/wideband operation, an analysis of the intermodulation distortion for the asymmetric source in a differential cascode structure is presented. Based on the analysis, the linearization technique using a second harmonic circuit at the gate of the common gate is proposed to reduce the asymmetry. The proposed PA with an on-chip transmission-line transformer, which has a broadband matching characteristic, is fabricated using a 0.18-μm RF CMOS technology. The measurement results show that the sideband asymmetry is less than 0.6 dB for a signal with up to 50-MHz bandwidth, and the peak average power is improved by 1.2 dB within the linearity spec of a 16-QAM 7.5-dB peak-to-average power ratio long-term evolution signal. The PA delivers a power-added efficiency of 36.5%―31.2% and an average output power of 27.5―27.1 dBm under an ACLRE―UTRA of ―30.5 dBc for a 50-MHz bandwidth signal across 1.4―2.0-GHz carrier frequency.
Titel: |
Control of IMD Asymmetry of CMOS Power Amplifier for Broadband Operation Using Wideband Signal
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Autor/in / Beteiligte Person: | SANGSU, JIN ; MYEONGJU, KWON ; KYUNGHOON, MOON ; BYUNGJOON, PARK ; BUMMAN, KIM |
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Zeitschrift: | IEEE transactions on microwave theory and techniques, Jg. 61 (2013), Heft 10, S. 3753-3762 |
Veröffentlichung: | New York, NY: Institute of Electrical and Electronics Engineers, 2013 |
Medientyp: | academicJournal |
Umfang: | print, 32 ref |
ISSN: | 0018-9480 (print) |
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