A 16 Kb Spin-Transfer Torque Random Access Memory With Self-Enable Switching and Precharge Sensing Schemes
In: IEEE transactions on magnetics, Jg. 50 (2014), Heft 4
Online
academicJournal
- print, 26 ref 2
Zugriff:
Spin-transfer torque magnetic random access memory (STT-MRAM) is considered one of the most promising non-volatile memory candidates thanks to its excellent performance in terms of access speed, endurance, and compatibility to CMOS. However, high power supply voltage is required in the conventional STT-MRAM writing circuit, which results in high power consumption (e.g.,~10 pJ/bit). In addition, it suffers from stochastic switching behavior and process voltage temperature variations. These make power-efficient and reliable write/read circuits become critical challenges. In this paper, we present novel circuits and architectures to build a 16 kb STT-MRAM design with low power and high reliability. For example, the self-enable switching scheme reduces the power consumption effectively and the fore-placed sense amplifier improves the robustness to process variation. Using an accurate compact model of 65 nm STT-MRAM and a commercial CMOS design kit, mixed transient and statistical simulations have been performed to validate this design.
Titel: |
A 16 Kb Spin-Transfer Torque Random Access Memory With Self-Enable Switching and Precharge Sensing Schemes
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Autor/in / Beteiligte Person: | LI, ZHANG ; WEISHENG, ZHAO ; YIQI, ZHUANG ; JUNLIN, BAO ; GEFEI, WANG ; HUALIAN, TANG ; CONG, LI ; BEILEI, XU |
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Zeitschrift: | IEEE transactions on magnetics, Jg. 50 (2014), Heft 4 |
Veröffentlichung: | New York, NY: Institute of Electrical and Electronics Engineers, 2014 |
Medientyp: | academicJournal |
Umfang: | print, 26 ref 2 |
ISSN: | 0018-9464 (print) |
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