Silicon nanowires integrated with CMOS circuits for biosensing application
In: Solid-state electronics, Jg. 98 (2014), S. 26-31
academicJournal
- print, 18 ref
Zugriff:
We describe a silicon nanowire (SiNW) biosensor fabricated in a fully depleted SOI CMOS process. The sensor array consists of N by N pixel matrix (N2 pixels or test sites) and 8 input-output (I/O) pins. In each pixel a single crystalline SiNW with 75 by 20 nm cross-section area is defined using sidewall transfer lithography in the SOI layer. The key advantage of the design is that each individual SiNWs can be read-out sequentially and used for real-time charge based detection of molecules in liquids or gases.
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Silicon nanowires integrated with CMOS circuits for biosensing application
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Autor/in / Beteiligte Person: | JAYAKUMAR, G ; ASADOLLAHI, A ; HELLSTRÖM, P.-E ; GARIDIS, K ; ÖSTLING, M |
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Zeitschrift: | Solid-state electronics, Jg. 98 (2014), S. 26-31 |
Veröffentlichung: | Kidlington: Elsevier, 2014 |
Medientyp: | academicJournal |
Umfang: | print, 18 ref |
ISSN: | 0038-1101 (print) |
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