CMOS-MEMS switches based on back-end metal layers
In: Micro/Nano Devices and Systems 2013: An open thematic journal issue, Jg. 119 (2014), S. 127-130
academicJournal
- print, 23 ref
Zugriff:
In this work MEMS switches have been developed using a standard CMOS technology (AMS 0.35 μm technology). With this purpose the back-end metallization layers (based on aluminum) have been used in two different configurations: stack of metals and via layers or M4 upper metal layer. After the in-house post-processing based on wet etching releasing process, they have been characterized and electrically measured, showing good reliability (more than 20 cycles, in both approaches) abrupt behavior (24 mV/ decade M4 configuration and 5 mV/decade stack approach) and good ION/IOFF ratio (1x102 M4 configuration and 1x103 stack switch).
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CMOS-MEMS switches based on back-end metal layers
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Autor/in / Beteiligte Person: | MUNOZ-GAMARRA, J. L ; VIDAL-ALVAREZ, G ; TORRES, F ; URANGA, A ; BARNIOL, N |
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Zeitschrift: | Micro/Nano Devices and Systems 2013: An open thematic journal issue, Jg. 119 (2014), S. 127-130 |
Veröffentlichung: | Amsterdam: Elsevier, 2014 |
Medientyp: | academicJournal |
Umfang: | print, 23 ref |
ISSN: | 0167-9317 (print) |
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