A Novel 2.5-3.1 GHz Wide-Band Low-Noise Amplifier in 0.18 μm CMOS
In: Wireless personal communications, Jg. 79 (2014), Heft 3, S. 1993-2003
Online
academicJournal
- print, 18 ref
Zugriff:
Aiming for the simultaneous realization of constant gain, accurate input and output impedance matching and minimum noise figure (NF) over a wide frequency range, the circuit topology and detailed design of wide broadband low noise amplifier (LNA) are presented in this paper. A novel 2.5-3.1 GHz wide-band LNA with unique characteristics has been presented. Its design and layout are done by TSMC 0. 18 μm technology. Common gate stage has been used to improve input matching. In order to enhance output matching and reduce the noise as well, a buffer stage is utilized. Mid-stages which tend to improve the gain and reverse isolation are exploited. The proposed LNA achieves a power gain of 15.9 dB, a NF of 3.5 dB with an input return loss less than — 11.6, output return loss of -19.2 to -19 and reverse isolation of — 38 dB. The LNA consumes 54.6 mW under a supply voltage of 2V while having some acceptable characteristics.
Titel: |
A Novel 2.5-3.1 GHz Wide-Band Low-Noise Amplifier in 0.18 μm CMOS
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Autor/in / Beteiligte Person: | NOURI, Moslem ; KARIMI, Gholamreza |
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Zeitschrift: | Wireless personal communications, Jg. 79 (2014), Heft 3, S. 1993-2003 |
Veröffentlichung: | Heidelberg: Springer, 2014 |
Medientyp: | academicJournal |
Umfang: | print, 18 ref |
ISSN: | 0929-6212 (print) |
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