Antenna-Integrated 0.6 THz FET Direct Detectors Based on CVD Graphene
In: Nano letters (Print), Jg. 14 (2014), Heft 10, S. 5834-5838
academicJournal
- print, 42 ref
Zugriff:
We present terahertz (THz) detectors based on top-gated graphene field effect transistors (GFETs) with integrated split bow-tie antennas. The GFETs were fabricated using graphene grownby chemical vapor deposition (CVD). The THz detectors are capableof room-temperature rectification of a 0.6 THz signal and achieve a maximum optical responsivity better than 14 V/W and minimum optical noise-equivalent power (NEP) of 515 pW/Hz0.5. Our results are a significant improvement over previous work on graphene direct detectors and are comparable to other established direct detector technologies. This is the first time room-temperature direct detection has been demonstrated using CVD graphene, which introduces the potential for scalable, wafer-level production of graphene detectors.
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Antenna-Integrated 0.6 THz FET Direct Detectors Based on CVD Graphene
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Autor/in / Beteiligte Person: | ZAK, Audrey ; ANDERSSON, Michael A ; BAUER, Maris ; MATUKAS, Jonas ; LISAUSKAS, Alvydas ; ROSKOS, Hartmut G ; STAKE, Jan |
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Zeitschrift: | Nano letters (Print), Jg. 14 (2014), Heft 10, S. 5834-5838 |
Veröffentlichung: | Washington, DC: American Chemical Society, 2014 |
Medientyp: | academicJournal |
Umfang: | print, 42 ref |
ISSN: | 1530-6984 (print) |
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