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Crystallization characteristics of LaNiO3 (LNO) thin films prepared by either rf magnetron sputtering or pulsed laser deposition (PLD), and their effect on the ferroelectric properties of subsequently pulsed-laser-deposited (Pb1-xLax)(ZryTi1-y)O3 (PLZT) films were examined. Post-annealing of the amorphous LNO layers, which were prepared by room-temperature sputtering, revealed that the LNO crystallized at temperatures higher than 450°C, and the annealed LNO layers were randomly oriented. However, a substrate temperature of only 250° C was required to form crystalline LNO films in a high-temperature sputtering process and the resultant films were preferentially (100) oriented with low electrical resistivity (ρs = 0.55 mΩ.cm). On the other hand, a substrate temperature of 400°C was required in situ to grow crystalline LNO phase by the PLD process and the obtained films were predominantly (110) oriented with a high resistivity (ρs = 6.38 mΩ.cm). The Pt used as an underlay markedly reduced the resistivity (ρs = 0.05 mΩ. cm) without changing the texture characteristics of LNO layers. It was also found that a reduction of gas pressure in the deposition chamber could enhance the (100)-oriented crystallization of LNO in both sputtering or PLD process. PLZT films subsequently deposited by PLD on the LNO layers required a substrate temperature > 500°C to completely eliminate the pyrochlore phase. The structural characteristics of the PLZT films inherit that of the underlying LNO layer. Ferroelectric and dielectric properties of PLZT films were optimized when using the (100) LNO-Pt double-layers were used as bottom electrodes. The remanent polarization and coercive field obtained were Pr = 14.9 μC/cm2 and Ec = 3.5 kV/cm, respectively, and the dielectric constant was 950 with a loss of tan δ < 0.05 at 1kHz.

Titel:	Crystallization characteristics of LaNiO3 layers and their effect on pulsed laser deposited (Pb1-xLax)(ZryTi1-y)O3 thin films
Autor/in / Beteiligte Person:	TSENG, T.-F ; YANG, C.-C ; LIU, K.-S ; WU, J.-M ; WU, T.-B ; LIN, I.-N
Link:	View record from PASCAL Archive
Zeitschrift:	Japanese journal of applied physics, Jg. 35 (1996), Heft 9A, S. 4743-4749
Veröffentlichung:	Tokyo: Japanese journal of applied physics, 1996
Medientyp:	academicJournal
Umfang:	print, 23 ref 1
ISSN:	0021-4922 (print)
Schlagwort:	Crystallography Cristallographie cristallogenèse Optics Optique Condensed state physics Physique de l'état condensé Physics Physique Plasma physics Physique des plasmas Sciences exactes et technologie Exact sciences and technology Etat condense: structure electronique, proprietes electriques, magnetiques et optiques Condensed matter: electronic structure, electrical, magnetic, and optical properties Propriétés et matériaux diélectriques, piézoélectriques et ferroélectriques Dielectrics, piezoelectrics, and ferroelectrics and their properties Ferroélectricité et antiferroélectricité Ferroelectricity and antiferroelectricity Structure des domaines; hystérésis Domain structure; hysteresis Matériaux diélectriques, piézoélectriques, ferroélectriques et antiferroélectriques Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Niobates, titanates, tantalates, céramiques pzt, etc Niobates, titanates, tantalates, pzt ceramics, etc Domaines interdisciplinaires: science des materiaux; rheologie Cross-disciplinary physics: materials science; rheology Science des matériaux Materials science Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie Methods of deposition of films and coatings; film growth and epitaxy Depôt par pulvérisation cathodique Deposition by sputtering Dépôt par faisceau laser Laser deposition Composé minéral Inorganic compounds Lanthanide composé Rare earth compounds Métal transition composé Transition element compounds Composé ternaire Ternary compounds Constante diélectrique Permittivity Couche mince Thin films Croissance cristalline en phase vapeur Crystal growth from vapors Dépendance température Temperature dependence Etude expérimentale Experimental study Ferroélectricité Ferroelectricity Lanthane oxyde Lanthanum oxides Laser pulsé Pulsed lasers Magnétron Magnetrons Mode opératoire Operating mode Método operatorio Méthode ablation laser Laser ablation technique PLZT Plomb oxyde Lead oxides Pulvérisation haute fréquence Radiofrequency sputtering Pulverización alta frecuencia Recuit thermique Thermal annealing Recocido térmico Substrat Substrates Texture (Pb1-xLax)(ZryTi1-y)O3 La Ni O La O Pb Ti Zr LaNiO3
Sonstiges:	Nachgewiesen in: PASCAL Archive Sprachen: English Original Material: INIST-CNRS Document Type: Article File Description: text Language: English Author Affiliations: Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 300, Tawain, Province of China ; Materials Science Center, National Tsing-Hua University, Hsinchu, Tawain, Province of China Rights: Copyright 1996 INIST-CNRS ; CC BY 4.0 ; Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS Notes: Physics and materials science ; Physics of condensed state: electronic structure, electrical, magnetic and optical properties

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Crystallization characteristics of LaNiO3 layers and their effect on pulsed laser deposited (Pb1-xLax)(ZryTi1-y)O3 thin films