Diamond film growth by chemical vapor deposition : a molecular simulation
In: Physical review. B, Condensed matter, Jg. 48 (1993), Heft 7, S. 4806-4810
Online
academicJournal
- print, 30 ref
Zugriff:
We present results of a kinetic Monte Carlo simulation of low-pressure diamond film growth from a C[111] substrate via acetylene and hydrogen vapor deposition. Interactions are governed by a semiempirical interatomic potential-energy function. We find that acetylene binding to a clean C[111] surface is favored in this Monte Carlo process, but adsorption of a second C2H2 is not likely until the neighborhood around the site for the second-layer adsorption contains a sufficient number of first-layer adsorbed molecules. This property of the potential energy is responsible for layer-by-layer growth of the film. We also find that the simulated surface is somewhat rougher than diamond surfaces studied by atomic force microscopy. This suggests a need to include the methyl radical in future simulation models.
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Diamond film growth by chemical vapor deposition : a molecular simulation
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Autor/in / Beteiligte Person: | XING, J ; SCOTT, H. L |
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Zeitschrift: | Physical review. B, Condensed matter, Jg. 48 (1993), Heft 7, S. 4806-4810 |
Veröffentlichung: | Woodbury, NY; Woodbury, NY: American Institute of Physics, American Physical Society, 1993 |
Medientyp: | academicJournal |
Umfang: | print, 30 ref |
ISSN: | 0163-1829 (print) |
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