Heteroepitaxially grown diamond on a c-BN {111} surface
In: Applied physics letters, Jg. 63 (1993), Heft 10, S. 1336-1338
Online
academicJournal
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Zugriff:
A continuous diamond film with a thickness of about 10 μm was grown on {111} faces of a single-crystal cubic boron nitride (c-BN) by hot-filament chemical vapor deposition (CVD). Cross-sectional selected area diffraction pattern (SADP) and high resolution electron microscopy (HREM) of the diamond/c-BN interfacer show that the diamond has a parallel orientation relationship with respect to the substrate.
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Heteroepitaxially grown diamond on a c-BN {111} surface
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Autor/in / Beteiligte Person: | LONG, WANG ; PIROUZ, P ; ARGOITIA, A ; JING SHENG, MA ; ANGUS, J. C |
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Zeitschrift: | Applied physics letters, Jg. 63 (1993), Heft 10, S. 1336-1338 |
Veröffentlichung: | Melville, NY: American Institute of Physics, 1993 |
Medientyp: | academicJournal |
Umfang: | print, 10 ref |
ISSN: | 0003-6951 (print) |
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