Ozone-induced rapid low temperature oxidation of silicon
In: Applied physics letters, Jg. 63 (1993), Heft 18, S. 2517-2519
Online
academicJournal
- print, 15 ref
Zugriff:
We report the use of ozone enriched oxygen to induce rapid oxidation of silicon at temperatures up to 550°C. The growth rates induced under these conditions were well over an order of magnitude larger than those achieved using pure dry oxygen. At 550°C films up to 260 Å5 in thickness were grown 4 h producing a growth rate comparable to that for conventional oxidation at 850°C.
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Ozone-induced rapid low temperature oxidation of silicon
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Autor/in / Beteiligte Person: | KAZOR, A ; BOYD, I. W |
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Zeitschrift: | Applied physics letters, Jg. 63 (1993), Heft 18, S. 2517-2519 |
Veröffentlichung: | Melville, NY: American Institute of Physics, 1993 |
Medientyp: | academicJournal |
Umfang: | print, 15 ref |
ISSN: | 0003-6951 (print) |
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