Rapid thermal low pressure metalorganic chemical vapor deposition of In0.53Ga0.47As films using tertiarylbutylarsine
In: Applied physics letters, Jg. 63 (1993), Heft 19, S. 2679-2681
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academicJournal
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Zugriff:
Rapid thermal low pressure metalorganic chemical vapor deposition (RT-LPMOCVD) of lattice-matched epitaxial In0.53Ga0.47As films onto InP substrates was successfully performed using tertiarybutylarsine (TBA) and growth temperatures in the range of 500-550°C. The undoped, featureless films were grown with a low V:III ratio of 2, and exhibited an excellent morphology with a minimum backscattering yield (χmin) of 3.6% and narrow x-ray full width at half-maximum peak of 28 arcsec of the InGaAs layer on InP, reflecting a lattice mismatch of 0.02%.
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Rapid thermal low pressure metalorganic chemical vapor deposition of In0.53Ga0.47As films using tertiarylbutylarsine
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Autor/in / Beteiligte Person: | KATZ, A ; FEINGOLD, A ; MORIYA, N ; PEARTON, S. J ; GEVA, M ; BAIOCCHI, F. A ; LUTHER, L. C ; LANE, E |
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Zeitschrift: | Applied physics letters, Jg. 63 (1993), Heft 19, S. 2679-2681 |
Veröffentlichung: | Melville, NY: American Institute of Physics, 1993 |
Medientyp: | academicJournal |
Umfang: | print, 10 ref |
ISSN: | 0003-6951 (print) |
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