1/f noise in series resistance of LDD MOSTs
In: Solid-state electronics, Jg. 35 (1992), Heft 10, S. 1471-1475
academicJournal
- print, 14 ref
Zugriff:
Low-doped CMOS transistors have been investigated. On the biasis of the corrected optical channel length, the series resistance Rs of the channel has been found from a set of MOSTs on the same chip, all having the same channel width, but differing in length. Rs is about inversely proportional to the effective gate voltage VG*. The 1/f resistance noise of the series resistance SRs is proportional to VG*-3 or VG*-4, depending on the implantation energy used to profile the low-doped parts of source/drain.
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1/f noise in series resistance of LDD MOSTs
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Autor/in / Beteiligte Person: | LI, X ; VANDAMME, L. K. J |
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Zeitschrift: | Solid-state electronics, Jg. 35 (1992), Heft 10, S. 1471-1475 |
Veröffentlichung: | Oxford: Elsevier Science, 1992 |
Medientyp: | academicJournal |
Umfang: | print, 14 ref |
ISSN: | 0038-1101 (print) |
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