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Japanese journal of applied physics. JJAP : Japanese journal of applied physics

応用物理学会
In: Part, Jg. Part. 1 (2004-04-01)
Online serialPeriodical - v. ; 30 cm
Zugriff:
View record in National Diet Library Digital Collections (Volltext)

Titel:
Japanese journal of applied physics. JJAP : Japanese journal of applied physics
Autor/in / Beteiligte Person: 応用物理学会
Link:
Zeitschrift: Part, Jg. Part. 1 (2004-04-01)
Veröffentlichung: Tokyo: Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics, 2004
Medientyp: serialPeriodical
Umfang: v. ; 30 cm
ISSN: 0021-4922 (print)
Sonstiges:
  • Nachgewiesen in: National Diet Library Digital Collections - 国立国会図書館デジタルコレクション
  • Sprachen: English, French, German
  • Contents Note: CONTENTS/ / (0002.jp2) -- Special Issue: Solid State Devices and Materials/ / 1673～2396 (0007.jp2)<6938155> -- FOREWORD/ / 10～ (0007.jp2) -- Advanced Silicon Circuits and Systems/ / 1673～ (0007.jp2) -- New Scheme of Electrostatic Discharge Circuit Simulations Using Protection Device Model with Generated-Hole-Dependent Base Resistance/Yoshiharu Tosaka ; Hiromi Anzai ; Kunihiro Suzuki / 1673～1676 (0007.jp2)<6938170> -- A New Voltage between Collector and Emitter (VCE) Sensing Scheme for Short-Circuit Withstanding Capability of the Insulated Gate Bipolar Transistor/Byung-Chul Jeon ; In-hwan Ji ; Min-Koo Han / 1677～1679 (0009.jp2)<6938184> -- Vision Chip with Electrical Fovea Motion/Yoshihiro Nakagawa ; Jun Deguchi ; Shim Jeoung-Chill / 1680～1684 (0011.jp2)<6938195> -- Three-Dimensionally Stacked Analog Retinal Prosthesis Chip/Jun Deguchi ; Taiichiro Watanabe ; Tomonori Nakamura / 1685～1689 (0013.jp2)<6938207> -- Large-Scale Emulation of Quantum Computing Based on Nonzero State Transitions/Minoru Fujishima ; Kento Inai ; Tetsuro Kitasho / 1690～1694 (0016.jp2)<6938230> -- Efficient Suppression of Substrate Noise Coupling in Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor Technology/Wen-Kuan Yeh ; Shuo-Mao Chen / 1695～1698 (0018.jp2)<6938241> -- Advanced Silicon Devices and Device Physics/ / 1699～ (0020.jp2) -- Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer/Junji Koga ; Takamitsu Ishihara ; Shin-ichi Takagi / 1699～1703 (0020.jp2)<6938262> -- Eliminating the Threshold-Voltage Offset of p-Channel Metal-Oxide-Semiconductor Field Effect Transistors in High-Density Dynamic Random Access Memory/Norikatsu Takaura ; Riichiro Takemura ; Hideyuki Matsuoka / 1704～1708 (0023.jp2)<6938288> -- Gate Engineering to Prevent NMOS Dopant Channeling for Nanoscale CMOSFET Technology/Sung Hyung Park ; Yong Goo Kim ; Hee Hwan Ji / 1709～1712 (0025.jp2)<6938307> -- Schottky Barrier Height Reduction and Drive Current Improvement in Metal Source／Drain MOSFET with Strained-Si Channel/Atsushi Yagishita ; Tsu-Jae King ; Jeffrey Bokor / 1713～1716 (0027.jp2)<6938334> -- Intelligent BSIM4 Model Parameter Extraction for Sub-100nm MOSFET Era/Yiming Li ; Yen-Yu Cho / 1717～1722 (0029.jp2)<6938351> -- Effects of Selecting Channel Direction in Improving Performance of Sub-100nm MOSFETs Fabricated on (110) Surface Si Substrate/Hidetatsu Nakamura ; Tatsuya Ezaki ; Toshiyuki Iwamoto / 1723～1728 (0032.jp2)<6938396> -- Characterization of Plasma Nitridation Impact on Lateral Extension Profile in 50nm N-MOSFET by Scanning Tunneling Microscopy/Hidenobu Fukutome ; Takashi Saiki ; Mitsuaki Hori / 1729～1733 (0035.jp2)<6938421> -- Optimization of The Ultra-Low Dark Current Complementary MOS Image Sensor Cell Using n+ Ring Reset/Po-Hao Huang ; Hsiu-Yu Cheng ; Wen-Jen Chiang / 1734～1736 (0038.jp2)<6938429> -- Efficient Improvement of Hot-Carrier-Induced Device's Degradation for Sub-0.1μm Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor Technology/Jung-Chun Lin ; Wen-Kuan Yeh ; Tan-Fu Lei / 1737～1741 (0039.jp2)<6938439> -- Nanoscale MOSFET with Split-Gate Design for RF／Analog Application/Jun Yuan ; Jason C. S. Woo / 1742～1745 (0042.jp2)<6938444> -- Simple Wide-Band Metal-Insulator Metal (MIM) Capacitor Model for RF Applications and Effect of Substrate Grounded Shields/Seong-Sik Song ; Seung-Wook Lee ; Joonho Gil / 1746～1751 (0044.jp2)<6938451> -- Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch/Soo-Seong Kim ; Min-Woo Ha ; Yearn-Ik Choi / 1752～1755 (0047.jp2)<6938458> -- Optimization of Active Geometry Configuration and Shallow Trench Isolation (STI) Stress for Advanced CMOS Devices/Tony Lin ; Yoyi Gong ; Jung-Tsung Tseng / 1756～1758 (0049.jp2)<6938463> -- Stable Extraction of Threshold Voltage Using Transconductance Change Method for CMOS Modeling, Simulation and Characterization/Woo Young Choi ; Dong-Soo Woo ; Byung Yong Choi / 1759～1762 (0050.jp2)<6938469> -- A Variable Channel-Size MOSFET with Lightly Doped Drain Structure/Naoki Nakanose ; Yutaka Arima ; Tanemasa Asano / 1763～1767 (0052.jp2)<6938472> -- Silicon Process／Materials Technologies/ / 1768～ (0055.jp2) -- Highly Selective Etching of Tantalum Electrode to Thin Gate Dielectrics Using SiCl4-NF3 Gas Mixture Plasma/Hiroyuki Shimada ; Koichi Maruyama / 1768～1772 (0055.jp2)<6938480> -- Ni-Salicided Poly-Si／poly-SiGe-Layered Gate Technology for 65-nm-node CMOSFETs/Akiyoshi Muto ; Hiroshi Ohji ; Takeshi Maeda / 1773～1777 (0057.jp2)<6938494> -- Advanced PMOS Device Architecture for Highly-Doped Ultra-Shallow Junctions/Radu Surdeanu ; Bartlomiej J. Pawlak ; Richard Lindsay / 1778～1783 (0060.jp2)<6938506> -- High-Speed Damage-Free Contact Hole Etching Using Dual Shower Head Microwave-Excited High-Density-Plasma Equipment/Tetsuya Goto ; Hiroshi Yamauchi ; Takeyoshi Kato / 1784～1787 (0063.jp2)<6938517> -- Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing/Masato Koyama ; Yuuichi Kamimuta ; Mitsuo Koike / 1788～1794 (0065.jp2)<6938530> -- Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO2 Directly Grown on Si(111)/Daisuke Matsushita ; Yukie Nishikawa ; Nobutaka Satou / 1795～1798 (0068.jp2)<6938560> -- W-Polymetal Gate with Low W／Poly-Si Interface Resistance for High-Speed／High-Density Embedded Memory/Tomohiro Yamashita ; Yukio Nishida ; Kiyoshi Hayashi / 1799～1803 (0070.jp2)<6938571> -- Optimum TiSi2 Ohmic Contact Process for Sub-100nm Devices/Hee Sook Park ; Jong Myeong Lee ; Sang Woo Lee / 1804～1806 (0073.jp2)<6938583> -- Mechanical Property Control of Low-k Dielectrics for Diminishing Chemical Mechanical Polishing (CMP)-Related Defects in Cu-Damascene Interconnects/Ken-ichiro Hijioka ; Fuminori Ito ; Masayoshi Tagami / 1807～1812 (0074.jp2)<6938590> -- Role of Frictional Force on the Polishing Rate of Cu Chemical Mechanical Polishing/Hisanori Matsuo ; Akira Ishikawa ; Takamaro Kikkawa / 1813～1819 (0077.jp2)<6938597> -- A Novel Photosensitive Porous Low-k Interlayer Dielectric Film/Shin-Ichiro Kuroki ; Susumu Sakamoto ; Takamaro Kikkawa / 1820～1824 (0081.jp2)<6938608> -- Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide/Heung-Jae Cho ; Kwan-Yong Lim ; Se-Aug Jang / 1825～1828 (0083.jp2)<6938615> -- Impact of In Situ NH3 Preannealing on Sub-100nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation/Kwan-Yong Lim ; Jung-Ho Lee ; Heung-Jae Cho / 1829～1832 (0085.jp2)<6938627> -- Ni Precursor for Chemical Vapor Deposition of NiSi/Masato Ishikawa ; Takeshi Kada ; Hideaki Machida / 1833～1836 (0087.jp2)<6938632> -- New Materials and Characterization/ / 1837～ (0089.jp2) -- Effect of Boron and Fluorine Incorporation in SiON Gate Insulator with Optimized Nitrogen Profile/Takaoki Sasaki ; Fumio Ootsuka ; Hiroji Ozaki / 1837～1842 (0089.jp2)<6938640> -- Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO2 Gate Films/Yukihiko Watanabe ; Akiyoshi Seko ; Hiroki Kondo / 1843～1847 (0092.jp2)<6938646> -- Halo Ion Implantation Effect on Extension Profile Studied by Scanning Capacitance Microscopy Using All-Metal Probe under FM Control/Yuichi Naitou ; Norio Ookubo / 1848～1851 (0095.jp2)<6938662> -- Enhanced Metal-Induced Lateral Crystallization in Amorphous Ge／Si／SiO2 Layered Structure/Hiroshi Kanno ; Atsushi Kenjo ; Taizoh Sadoh / 1852～1855 (0097.jp2)<6938672> -- Simultaneous Formation of Multiwall Carbon Nanotubes and their End-Bonded Ohmic Contacts to Ti Electrodes for Future ULSI Interconnects/Mizuhisa Nihei ; Masahiro Horibe ; Akio Kawabata / 1856～1859 (0099.jp2)<6938682> -- Thermal Instability of Poly-Si Gate Al2O3 MOSFETs/Woo Sik Kim ; Takaaki Kawahara ; Hiroyuki Itoh / 1860～1863 (0101.jp2)<6938698> -- Selective Dry Etching of HfO2 in CF4 and Cl2／HBr-Based Chemistries/Takeshi Maeda ; Hiroyuki Ito ; Riichiro Mitsuhashi / 1864～1868 (0103.jp2)<6938719> -- Improving the Accuracy of Modified Shift-and-Ratio Channel Length Extraction Method Using Scanning Capacitance Microscopy/Chee-Wee Eng ; Wai-Shing Lau ; Yao-Yao Jiang / 1869～1872 (0105.jp2)<6938732> -- Effects of Post Dielectric Deposition and Post Metallization Annealing Processes on Metal／Dy2O3／Si(100) Diode Characteristics/Shun-ichiro Ohmi ; Hiroyuki Yamamoto ; Junichi Taguchi / 1873～1878 (0107.jp2)<6938758> -- Formation of β-FeSi2-xGex by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si／a-FeSiGe]n Multilayered Structure/Taizoh Sadoh ; Masakazu Owatari ; Yuji Murakami / 1879～1881 (0110.jp2)<6938779> -- Characterization and Comparison of Strained Si1-yCy Metal Oxide Semiconductor Field-Effect Transistor Grown by Gas-Source Molecular Beam Epitaxy and Hot Wire Cell Method/Tatsuro Watahiki ; Hanae Ishihara ; Katsuya Abe / 1882～1885 (0112.jp2)<6938792> -- Cross-Hatch Related Oxidation and Its Impact on Performance of Strained-Si MOSFETs/Mika Nishisaka ; Yuichi Hamasaki ; Osamu Shirata / 1886～1890 (0114.jp2)<6938802> -- Visible Light Irradiation Effects on STM Observations of Hydrogenated Amorphous Silicon Surfaces/Kenta Arima ; Hiroaki Kakiuchi ; Manabu Ikeda / 1891～1895 (0116.jp2)<6938818> -- Influence of Structural Variation of Ni Silicide Thin Films on Electrical Property for Contact Materials/Kazuya Okubo ; Yoshinori Tsuchiya ; Osamu Nakatsuka / 1896～1900 (0119.jp2)<6938829> -- Nucleation Control in Solid-Phase Crystallization of a-Si／SiO2 by Local Ge Insertion/Isao Tsunoda ; Kei Nagatomo ; Atsushi Kenjo / 1901～1904 (0121.jp2)<6938840> -- Compound Semiconductors Materials and Devices/ / 1905～ (0123.jp2) -- 30nm Triple-Gate In0.7GaAs HEMTs Fabricated by Damage-Free SiO2／SiNx Sidewall Process and BCB Planarization/Dae-Hyun Kim ; Seong-Jin Yeon ; Jae-Hak Lee / 1905～1909 (0123.jp2)<6938851> -- Effects of Thermal Stress on the Performance of Benzocyclobutene-Passivated In0.52Al0.48As／In0.53Ga0.47As High Electron Mobility Transistors/Myounghoon Yoon ; Taeho Kim ; Daehee Kim / 1910～1913 (0126.jp2)<6938868> -- Small-Signal Analysis of High Maximum Frequency of Oscillation 0.1μm Off-Set Gamma-Shaped Gate InGaAs／InAlAs／GaAs Metamorphic High-Electron-Mobility Transistors/Bok-Hyung Lee ; Sam-Dong Kim ; Jin-Koo Rhee / 1914～1918 (0128.jp2)<6938888> -- Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors/Cheng-Hsien Wu ; Yan-Kuin Su ; Shang-Chin Wei / 1919～1921 (0130.jp2)<6938910> -- Extrinsic Base Regrowth of p-InGaN for Npn-Type GaN／InGaN Heterojunction Bipolar Transistors/Toshiki Makimoto ; Kazuhide Kumakura ; Naoki Kobayashi / 1922～1924 (0132.jp2)<6938964> -- Improvement of DC and RF Characteristics of AlGaN／GaN High Electron Mobility Transistors by Thermally Annealed Ni／Pt／Au Schottky Gate/Takuma Nanjo ; Naruhisa Miura ; Toshiyuki Oishi / 1925～1929 (0133.jp2)<6938993> -- Fabrication of GaN／Alumina／GaN Structure to Reduce Dislocations in GaN/Masanobu Hiroki ; Kazuhide Kumakura ; Toshiki Makimoto / 1930～1933 (0136.jp2)<6939009> -- Improvement of AlGaInP Multiple-Quantum-Well Light-Emitting Diodes by Modification of Ohmic Contact Layer/Hsin-Chuan Wang ; Yan-Kuin Su ; Chun-Liang Lin / 1934～1936 (0138.jp2)<6939022> -- Low-Frequency Noise Caused by Substrate Current in AlGaAs／InGaAs HEMTs/Masanori Wada ; Takayuki Nakamoto ; Katsuhiko Higuchi / 1937～1940 (0139.jp2)<6939029> -- Electrostatic Discharge Effects on AlGaN／GaN High Electron Mobility Transistors on Sapphire Substrates/Seung-Chul Lee ; Jin-Cherl Her ; Sang-Myeon Han / 1941～1943 (0141.jp2)<6939040> -- Thermal Annealing Effect in GaInNAs Thin Films Estimated by Fluorescence X-Ray Absorption Fine Structure Spectroscopy/Kazuyuki Uno ; Masako Yamada ; Toshiyuki Takizawa / 1944～1946 (0143.jp2)<6939062> -- Optoelectronic Devices and Photonic Crystal Devices/ / 1947～ (0144.jp2) -- Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers/Hsin-Chieh Yu ; Shoou-Jinn Chang ; Yan-Kuin Su / 1947～1950 (0144.jp2)<6939075> -- High-Power 200mW 660nm AlGaInP Laser Diodes with Low Operating Current/Ryoji Hiroyama ; Daijiro Inoue ; Shingo Kameyama / 1951～1955 (0146.jp2)<6939088> -- Fabrication of InP-based Optoelectronic Integrated Circuit (OEIC) Photoreceivers Using Shared Layer Integration of Heterojunction Bipolar Transistors and Refracting-Facet Photodiodes/Bangkeun Lee ; Kyounghoon Yang / 1956～1959 (0149.jp2)<6939104> -- 40GHz Actively Mode-Locked Distributed Bragg Reflector Laser Diode Module with an Impedance-Matching Circuit for Efficient RF Signal Injection/Shin Arahira ; Yoh Ogawa / 1960～1964 (0151.jp2)<6939119> -- Very High Frequency Self-Pulsation and Stable Optical Injection Locking for Well-Defined Multi-Electrode Distributed Feedback Lasers/Satoshi Nishikawa ; Mitsunobu Gotoda ; Tetsuya Nishimura / 1965～1968 (0153.jp2)<6939129> -- Suppression of Lasing Wavelength Change of 980nm Pump Laser Diodes for Metro Applications/Kazushige Kawasaki ; Kimio Shigihara ; Hiromasu Matsuoka / 1969～1972 (0155.jp2)<6939141> -- Intersubband Transition Based on a Novel II-VI Quantum Well Structure for Ultrafast All-Optical Switching/Ryoichi Akimoto ; Bing Sheng Li ; Fumio Sasaki / 1973～1977 (0157.jp2)<6939158> -- Control of InxGa1-xAs Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots/Pachamuthu Jayavel ; Hirokazu Tanaka ; Takashi Kita / 1978～1980 (0160.jp2)<6939172> -- High Performance Electroluminescence from Nanocrystalline Silicon with Carbon Buffer/Bernard Gelloz ; Nobuyoshi Koshida / 1981～1985 (0161.jp2)<6939205> -- Coupled Waveguide Devices Based on Autocloned Photonic Crystals/Masayuki Shirane ; Akiko Gomyo ; Kenta Miura / 1986～1989 (0164.jp2)<6939223> -- Enhancement of Cavity-Q in a Quasi-Three-Dimensional Photonic Crystal/Masamichi Ito ; Satoshi Iwamoto ; Yasuhiko Arakawa / 1990～1994 (0166.jp2)<6939245> -- Novel Ring Waveguide Device in a 2D Photonic Crystal Slab--Transmittance Simulated by Finit-Difference Time-Domain Analysis/Katsumi Furuya ; Noritsugu Yamamoto ; Yoshinori Watanabe / 1995～2001 (0168.jp2)<6939256> -- Femtosecond Pulse Propagation through a Quantum Wire Optical Waveguide Observed by Cross-Correlation Frequency-Resolved Optical Gating Spectroscopy/Noriaki Tsurumachi ; Naoki Watanabe ; Kazunori Hikosaka / 2002～2005 (0172.jp2)<6939272> -- InGaN／GaN Light Emitting Diodes with a Lateral Current Blocking Structure/Hsin-Chuan WANG ; Yan-Kuin SU ; Chun-Liang LIN ; Wen-Bin CHEN ; Shi-Ming CHEN / 2006～ (0174.jp2) -- InGaN／GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers/Ping-Chuan Chang ; Chin-Hsiang Chen ; Shoou-Jinn Chang / 2008～2010 (0175.jp2)<6939292> -- Optical Properties of Acrylate-Based Negative-Type Photoresist and Its Application to Optical Waveguide Fabrication/Pavol Gustafik ; Okihiro Sugihara ; Naomichi Okamoto / 2011～2014 (0176.jp2)<6939298> -- Numerical Analysis of Waveguides in Three-Dimensional Photonic Crystal with Finite Thickness/Yoshinori Watanabe ; Noritsugu Yamamoto ; Kazuhiro Komori / 2015～2018 (0178.jp2)<6939302> -- AlGaAs／InGaAs DFB Laser by One-Time Selective MOCVD Growth on a Grating Substrate/Yasuyuki Takasuka ; Yasuhide Tsuji ; Kenji Yonei / 2019～2022 (0180.jp2)<6939316> -- Novel Devices, Physics and Fabrication/ / 2023～ (0182.jp2) -- Ultrafast Coherent Control of Inhomogeneously Broadened System by an Area-Regulated Pulse Sequence/Noriaki Tsurumachi ; Kazuhiro Komori ; Toshiaki Hattori / 2023～2026 (0182.jp2)<6939323> -- Local Change of Carbon Nanotube-Metal Contacts by Current Flow through Electrodes/Hideyuki Maki ; Masaki Suzuki ; Koji Ishibashi / 2027～2030 (0184.jp2)<6939330> -- Analytical Modeling of Realistic Single-Electron Transistors Based on Metal-Oxide-Semiconductor Structure with a Unique Distribution Function in the Coulomb-Blockade Oscillation Region/Kyung Rok Kim ; Ki-Whan Song ; Dae Hwan Kim / 2031～2035 (0186.jp2)<6939341> -- Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor/Seiji Horiguchi ; Akira Fujiwara ; Hiroshi Inokawa / 2036～2040 (0189.jp2)<6939349> -- Monte Carlo Simulation of Single-Electron Nanocrystal Memories/Jae Sung Sim ; Jihye Kong ; Jong Duk Lee / 2041～2045 (0191.jp2)<6939363> -- A Novel Comb-Type Differential Pressure Sensor with Silicon Beams Embedded in a Silicone Rubber Membrane/Chang-Taeg Seo ; Young-Min Kim ; Jang-Kyoo Shin / 2046～2049 (0194.jp2)<6939373> -- Active Pixel Sensor Using a 1 × 16 Nano-Wire Photodetector Array for Complementary Metal Oxide Semiconductor Imagers/Jae-Hyoun Park ; Sang-Ho Seo ; In-Soo Wang / 2050～2053 (0196.jp2)<6939387> -- Generation of Local Magnetic Field by Nano Electro-Magnets/Hyung Kwon Kim ; Su Heon Hong ; Bo Chang Kim / 2054～2056 (0198.jp2)<6939395> -- Structure of Atomically Smoothed LiNbO3 (0001) Surface/Akira Saito ; Hideo Matsumoto ; Shuji Ohnisi / 2057～2060 (0199.jp2)<6939409> -- Electron Transport in Molecular Enamel Wires/Rodion V. Belosludov ; Amir A. Farajian ; Hiroshi Mizuseki / 2061～2063 (0201.jp2)<6939434> -- Quantum Nanostructure Devices and Physics/ / 2064～ (0203.jp2) -- Selective Molecular Beam Epitaxy Growth of GaAs Hexagonal Nanowire Networks on (111)B Patterned Substrates/Souichi Yoshida ; Isao Tamai ; Taketomo Sato / 2064～2068 (0203.jp2)<6939452> -- Transition Energy Control via Strain in Single Quantum Dots Embedded in Micromachined Air-Bridge/Toshihiro Nakaoka ; Takaaki Kakitsuka ; Toshio Saito / 2069～2072 (0205.jp2)<6939460> -- Voltage-Controlled Emission Wavelength Switching in a Pseudomorphic Si1-xGex／Si Double Quantum Well/Nozomu Yasuhara ; S. Fukatsu / 2073～2075 (0207.jp2)<6939473> -- A Solid-State Multicolor Light-Emitting Device Based on Ballistic Electron Excitation/Yoshiki Nakajima ; Tetsuya Uchida ; Hajime Toyama / 2076～2079 (0209.jp2)<6939486> -- Generation of Radiation Pressure in Thermally Induced Ultrasonic Emitter Based on Nanocrystalline Silicon/Jun Hirota ; Hiroyuki Shinoda ; Nobuyoshi Koshida / 2080～2082 (0211.jp2)<6939494> -- Optical Characteristics of InAs／GaAs Double Quantum Dots Grown by MBE with the Indium-Flush Method/Shohgo Yamauchi ; Kazuhiro Komori ; Takeyoshi Sugaya / 2083～2087 (0212.jp2)<6939512> -- Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence/Sunida Awirothananon ; Wei Dong Sheng ; Adam Babinski / 2088～2092 (0215.jp2)<6939530> -- Effect of Interlayer Exchange Coupling on the Curie Temperature in Ga1-xMnxAs Trilayer Structures/Shavkat U. Yuldashev ; Yongmin Kim ; Nayoung Kim / 2093～2096 (0217.jp2)<6939544> -- Magnetization Reversal Process of Submicrometer-Scale Hall Bars of Ferromagnetic Semiconductor p-In0.97Mn0.03As/Yoshiaki Sekine ; Junsaku Nitta ; Takaaki Koga / 2097～2100 (0219.jp2)<6939565> -- Au／GaAs Magnetoresistive-Switch-Effect Devices Fabricated by Wet Etching/Zhi-gang Sun ; Masaki Mizuguchi ; Hiroyuki Akinaga / 2101～2103 (0221.jp2)<6939575> -- Electron Transition Energy for Vertically Coupled InAs／GaAs Semiconductor Quantum Dots and Rings/Yiming Li ; Hsiao-Mei Lu / 2104～2109 (0223.jp2)<6939595> -- Spin Depolarization via Tunneling Effects in Asymmetric Double Quantum Dot Structure/Hirotaka Sasakura ; Satoru Adachi ; Shunichi Muto / 2110～2113 (0226.jp2)<6939607> -- Novel Magnetic Random Access Memory Cell Consisting of Magnetic Tunnel Junction Connected in Parallel with Negative Differential Resistance Device/Tetsuya Uemura ; Satoshi Honma ; Takao Marukame / 2114～2117 (0228.jp2)<6939621> -- Enhanced Optical Properties of High-Density (>1011／cm2) InAs／AlAs Quantum Dots by Hydrogen Passivation/Se-Ki Park ; Jun Tatebayashi ; Toshihiro Nakaoka / 2118～2121 (0230.jp2)<6939643> -- Control of GaSb／GaAs Quantum Nanostructures by Molecular Beam Epitaxy/Takanori Nakai ; Seiki Iwasaki ; Koichi Yamaguchi / 2122～2124 (0232.jp2)<6939689> -- Investigation of Ultrafast Carrier Dynamics in Quantum Wire by Terahertz Time-Domain Spectroscopy/Isao Morohashi ; Kazuhiro Komori ; Takehiko Hidaka / 2125～2127 (0233.jp2)<6939696> -- Silicon-on-Insulator Technologies/ / 2128～ (0235.jp2) -- Fully Depleted SOI Complementary MOS Device with Raised Source／Drain for 90nm Embedded Static RAM Technology/Chang Hyun Park ; Myung Hwan Oh ; Hee Sung Kang / 2128～2133 (0235.jp2)<6939710> -- Breakdown Voltage in Uniaxially Strained n-Channel SOI MOSFET/Naoya Watanabe ; Takeaki Kojima ; Yasuhiro Maeda / 2134～2139 (0238.jp2)<6939722> -- Novel Silicon On Insulator Metal Oxide Semiconductor Field Effect Transistors with Buried Back Gate/Hyuckjae Oh ; Hoon Choi ; Takeshi Sakaguchi / 2140～2144 (0241.jp2)<6939733> -- A High-Aspect-Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation/Akira Katakami ; Kei Kobayashi ; Hideo Sunami / 2145～2150 (0243.jp2)<6939740> -- Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors/Yongxun Liu ; Kenichi Ishii ; Meishoku Masahara / 2151～2155 (0246.jp2)<6939752> -- P-Channel Vertical Double-Gate MOSFET Fabricated by Utilizing Ion-Bombardment-Retarded Etching Processs/Meishoku Masahara ; Shinichi Hosokawa ; Takashi Matsukawa / 2156～2159 (0249.jp2)<6939764> -- SOI SRAM／DRAM Cells for 0.5V Operation/Mamoru Terauchi / 2160～2165 (0251.jp2)<6939769> -- Complete Surface-Potential-Based Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model for Circuit Simulation/Daisuke Kitamaru ; Yasuhito Uetsuji ; Norio Sadachika / 2166～2169 (0254.jp2)<6939780> -- CMOS Application of Schottky Source／Drain SOI MOSFET with Shallow Doped Extension/Sumie Matsumoto ; Mika Nishisaka ; Tanemasa Asano / 2170～2175 (0256.jp2)<6939784> -- A Workable Use of the Floating-Body Silicon-On-Sapphire MOSFET as a Transconductance Mixer/Sang Lam ; Wai-Kit Lee ; Alain C.-K. Chan / 2176～2179 (0259.jp2)<6939796> -- Threshold Voltage Behavior of Body-Tied FinFET (OMEGA MOSFET) with Respect to Ion Implantation Conditions/Tai-su Park ; Hye Jin Cho ; Jeong Dong Choe / 2180～2184 (0261.jp2)<6939801> -- Synthesis and Thermal Conductivity Measurement of High-Integrity Ultrathin Oxygen-Implanted Buried Oxide Layers/Yemin Dong ; Jing Chen ; Meng Chen / 2185～2187 (0263.jp2)<6939811> -- Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures (Short Note)/Kun-Ming CHEN ; Hsin-Hui HU ; Guo-Wei HUANG ; Wen-Kuan YEH ; Chun-Yen CHANG / 2188～ (0265.jp2) -- Non-Volatile Memory Technologies/ / 2190～ (0266.jp2) -- Proposal for a New Ferroelectric Gate Field Effect Transistor Memory Based on Ferroelectric-Insulator Interface Conduction/Gen Hirooka ; Minoru Noda ; Masanori Okuyama / 2190～2193 (0266.jp2)<6939816> -- A Low-Dielectric-Constant Sr2(Ta1-x, Nbx)2O7 Thin Film Controlling the Crystal Orientation on an IrO2 Substrate for One-Transistor-Type Ferroelectric Memory Device/Ichirou Takahashi ; Hiroyuki Sakurai ; Atsuhiko Yamada / 2194～2198 (0268.jp2)<6939827> -- Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device/Hyun-Ho Kim ; Jung-Hoon Park ; Yoon-Jong Song / 2199～2202 (0270.jp2)<6939831> -- Proposal of New Nonvolatile Memory with Magnetic Nano-Dots/Takeshi Sakaguchi ; Youn-Gi Hong ; Motoki Kobayashi / 2203～2206 (0272.jp2)<6939839> -- 70nm Silicon-Oxide-Nitride-Oxide-Silicon Nonvolatile Memory Devices Using Fowler-Nordheim Programming and Hot Hole Erase Method/Soodoo Chae ; Changju Lee ; Juhyung Kim / 2207～2210 (0274.jp2)<6939844> -- Data Retention Improvement of Metal-Oxide-Nitride-Oxide-Semiconductor Memories Using Silicon-Tetrachloride-Based Silicon Nitride with Ultralow Si-H Bond Density/Kazumasa Nomoto ; Goh Asayama ; Toshio Kobayashi / 2211～2216 (0276.jp2)<6939847> -- New Three-Dimensional High-Density Stacked-Surrounding Gate Transistor (S-SGT) Flash Memory Architecture Using Self-Aligned Interconnection Fabrication Technology without Photolithography Process for Tera-Bits and Beyond/Hiroshi Sakuraba ; Kazushi Kinoshita ; Takuji Tanigami / 2217～2219 (0279.jp2)<6939851> -- Retention and Read Endurance Characteristics of a Ferroelectric Gate Field Effect Transistor Memory with an Intermediate Electrode/Tran Dang Khoa ; Susumu Horita / 2220～2225 (0281.jp2)<6939858> -- A Novel Sensing Circuit for High Speed Synchronous Magneto-Resistive RAM/Hyejin Kim ; Seungyeon Lee ; Seungjun Lee / 2226～2229 (0284.jp2)<6939861> -- Electrical Characterization of Sub-micron Magnetic Tunneling Junction Cells Using Scanning Probe Microscopy/Seungbae Park ; Jinhee Heo ; T. W. Kim / 2230～2234 (0286.jp2)<6939866> -- Evaluation of Aluminum Oxide Thin Film in Magnetic Tunneling Junction Utilizing Scanning Probe Microscopy/Ho Chan Ham ; Kye Won Lee ; S. J. Park / 2235～2238 (0288.jp2)<6939872> -- SiGe／III-V／III Devices and Circuits for Wireless and Optical Communications/ / 2239～ (0290.jp2) -- Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications/Wataru Saito ; Yoshiharu Takada ; Masahiko Kuraguchi / 2239～2242 (0290.jp2)<6939879> -- High-Performance Composite-Collector InP／InGaAs Heterojunction Bipolar Transistors/Kenji Kurishima ; Minoru Ida ; Kiyoshi Ishii / 2243～2249 (0292.jp2)<6939884> -- Base Current Control in Low-VBE-Operated SiGeC Heterojunction Bipolar Transistors Using SiGe-Cap Structure and High-Carbon-Content Base/Tohru Saitoh ; Takahiro Kawashima ; Yoshihiko Kanzawa / 2250～2254 (0296.jp2)<6939904> -- Non-Recessed-Gate Enhancement-Mode AlGaN／GaN High Electron Mobility Transistors with High RF Performance/Akira Endoh ; Yoshimi Yamashita ; Keiji Ikeda / 2255～2258 (0298.jp2)<6939913> -- Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs／InGaAs Metamorphic HEMTs/Hideki Ono ; Satoshi Taniguchi ; Toshi-kazu Suzuki / 2259～2263 (0300.jp2)<6939919> -- System-Level Integration and Packaging Technologies/ / 2264～ (0303.jp2) -- Micro Cu Bump Interconnection on 3D Chip Stacking Technology/Kazumasa Tanida ; Mitsuo Umemoto ; Naotaka Tanaka / 2264～2270 (0303.jp2)<6939932> -- Thick-Dielectric Formation and MOSFET Reliability with Spin-Coating Film Transfer and Hot-Pressing Technique for Seamless Integration Technology/Norio Sato ; Nobuhiro Shimoyama ; Toshikazu Kamei / 2271～2276 (0306.jp2)<6939939> -- New Process of Self-Organized Interconnection in Packaging Using Conductive Adhesive with Low Melting Point Filler/Kiyokazu Yasuda ; Jong-Min Kim ; Masahiro Yasuda / 2277～2282 (0309.jp2)<6939949> -- Characteristics of Si Integrated Antenna for Inter-Chip Wireless Interconnection/A. B. M. Harun-ur Rashid ; Shinji Watanabe ; Takamaro Kikkawa / 2283～2287 (0312.jp2)<6939956> -- Wideband Magnetooptic Probe with 10μm-Class Spatial Resolution/Mizuki Iwanami ; Shigeki Hoshino ; Masato Kishi / 2288～2292 (0315.jp2)<6939963> -- Variable RF Inductor on Si CMOS Chip/Hirotaka Sugawara ; Yoshisato Yokoyama ; Shinichiro Gomi / 2293～2296 (0317.jp2)<6939966> -- Effect of High-Resistivity Si Substrate on Antenna Transmission Gain for On-Chip Wireless Interconnects/Shinji Watanabe ; A. B. M. Harun-ur Rashid ; Takamaro Kikkawa / 2297～2301 (0319.jp2)<6939972> -- Electrostatic Discharge Protection under Pad Design for Copper-Low-K VLSI Circuits/Jam Wem Lee ; Yiming Li ; Alice Chao / 2302～2305 (0322.jp2)<6939978> -- Organic Semiconductor Devices and Materials/ / 2306～ (0324.jp2) -- Fabrication and Photoelectrochemical Properties of Polythiophene-Porphyrin Composite Films/Tsuyoshi Akiyama ; Keitaro Kakutani ; Sunao Yamada / 2306～2310 (0324.jp2)<6939987> -- Electrical Properties and Gas Response in Alternate Layer-by-Layer Films of Copper Phthalocyanine Dyes/Keizo Kato ; Naoki Watanabe ; Shigenobu Katagiri / 2311～2314 (0326.jp2)<6939994> -- Fabrication and Characteristics of Increased Efficiency of Layered Polymeric Electroluminescent Diodes/Yuichi Hino ; Masayoshi Yamazaki ; Hirotake Kajii / 2315～2319 (0328.jp2)<6940004> -- Enhanced Red Emission from Fluorescent Organic Light-Emitting Devices Utilizing a Phosphorescent Sensitizer/Shiyong Liu ; Jing Feng ; Yi Zhao / 2320～2322 (0331.jp2)<6940009> -- Self-Aligned Organic Field-Effect Transistors Using Back-Surface Exposure Method/Takahiro Hyodo ; Fumiya Morita ; Shigeki Naka / 2323～2325 (0332.jp2)<6940013> -- Time-of-Flight Measurement of Lateral Carrier Mobility in Organic Thin Films/Masatoshi Kitamura ; Tadahiro Imada ; Satoshi Kako / 2326～2329 (0334.jp2)<6940023> -- Electric-Field-Induced Second Harmonic Generation from Vacuum-Evaporated Metallophthalocyanine Film／Metal Electrode Interface/Cheng-Quan Li ; Takaaki Manaka ; Mitsumasa Iwamoto / 2330～2334 (0336.jp2)<6940032> -- Conversion between Three- and Two-Dimensional Optical Waves in Attenuated Total Reflection Kretschmann Configuration with Nanostructured Langmuir-Blodgett Films/Futao Kaneko ; Katsuaki Wakui ; Hirotsugi Hatakeyama / 2335～2340 (0338.jp2)<6940044> -- Low-Birefringence Thermally and Environmentally Stable Slab Waveguide Planarized by Hot Embossing/Kenjiro Hasui ; Masahiro Tomiki ; Naomichi Okamoto / 2341～2345 (0341.jp2)<6940054> -- Waterproof Anti Reflection Films Fabricated by Layer-by-Layer Adsorption Process/Shiro Fujita ; Seimei Shiratori / 2346～2351 (0344.jp2)<6940059> -- Effects of Different Materials Used for Internal Floating Electrode on the Photovoltaic Properties of Tandem Type Organic Solar Cell/Kuwat Triyana ; Takeshi Yasuda ; Katsuhiko Fujita / 2352～2356 (0347.jp2)<6940072> -- Photoinduced Gate Modulation and Temperature Dependence in the Coulomb Staircase of Organic Single Electron Tunneling Junctions/Yutaka Noguchi ; Takaaki Manaka ; Mitsumasa Iwamoto / 2357～2361 (0349.jp2)<6940081> -- Thin Film Transistors with Oriented Copper Phthalocyanine Crystals Fabricated by Physical Vapor Deposition under DC Electric Field/Masatoshi Sakai ; Masaaki Iizuka ; Masakazu Nakamura / 2362～2365 (0352.jp2)<6940090> -- Characterization of Hydrogen-Treated Pentacene Organic Thin Film Transistors/Jung-Yen Yang ; Shich-Chang Suen ; Wha-Tzong Whang / 2366～2369 (0354.jp2)<6940098> -- Fabrication of High-Resolution Periodical Structure in Photoresist Polymers Using Laser Interference Technique/Shinya SHIBATA ; Yanlong CHE ; Okihiro SUGIHARA ; Naomichi OKAMOTO ; Toshikuni KAINO / 2370～ (0356.jp2) -- Fabrication of a Photoelectrochemical Cell Using a Self-Assembled Monolayer of Tris(2,2'-bipyrisine)ruthenium(II)-Viologen Linked Thiol on Multistructured Gold Nanoparticles/Nao Terasaki ; Keisuke Otsuka ; Tsuyoshi Akiyama / 2372～2375 (0357.jp2)<6940117> -- Determining the Self-Assembling and Redox Process of a Viologen Monolayer by Electrochemical Quartz Crystal Microbalance/Jin Young Ock ; Hoon Kyu Shin ; Dong Jin Qian / 2376～2380 (0359.jp2)<6940123> -- Micro-Nano Electromechanical Devices for Bio-and Chemical Applications/ / 2381～ (0361.jp2) -- Resonant Cavity Thin Film Photodiode for Compact Displacement Sensor/Minoru Sasaki ; Fuki Nakai ; Xiaoyu Mi / 2381～2386 (0361.jp2)<6940130> -- Flow Condition in Resist Spray Coating and Patterning Performance for Three-Dimensional Photolithography over Deep Structures/Vijay Kumar Singh ; Minoru Sasaki ; Kazuhiro Hane / 2387～2391 (0364.jp2)<6940137> -- Characteristics of High-Resolution Hemoglobin Measurement Microchip Integrated with Signal Processing Circuit/Toshihiko Noda ; Hidekuni Takao ; Mitsuaki Ashiki / 2392～2396 (0367.jp2)<6940149> -- Cumulative Author Index of Volume 43, 2004, Part 1/ / 11～ (0369.jp2)
  • Document Type: 雑誌
  • Language: English ; French ; German
  • Rights: 国立国会図書館/図書館・個人送信限定
  • Notes: 国立国会図書館雑誌記事索引 35 (5A) 1996.05～46 (12) 2007.12 ; Description based on the latest issue ; Title varies slightly ; 29 (11) =341 ; With: Suppl ; 総目次・総索引あり

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