Zum Hauptinhalt springen
UB Hagen

Japanese journal of applied physics. JJAP : Japanese journal of applied physics

応用物理学会
In: Part, Jg. Part. 1 (2006-04-01)
Online serialPeriodical - v. ; 30 cm
Zugriff:
View record in National Diet Library Digital Collections (Volltext)

Titel:
Japanese journal of applied physics. JJAP : Japanese journal of applied physics
Autor/in / Beteiligte Person: 応用物理学会
Link:
Zeitschrift: Part, Jg. Part. 1 (2006-04-01)
Veröffentlichung: Tokyo: Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics, 2006
Medientyp: serialPeriodical
Umfang: v. ; 30 cm
ISSN: 0021-4922 (print)
Sonstiges:
  • Nachgewiesen in: National Diet Library Digital Collections - 国立国会図書館デジタルコレクション
  • Sprachen: English, French, German
  • Contents Note: CONTENTS/ / (0002.jp2) -- Special Issue: Solid State Devices & Materials/ / 2893～3827 (0008.jp2)<7894110> -- FOREWORD/ / 12～ (0008.jp2) -- Advanced Gate Stack／Si Processing Science/ / 2893～ (0008.jp2) -- Characteristics of Fluorine Implantation for HfO2 Gate Dielectrics with High-Temperature Postdeposition Annealing/Chao Sung Lai ; Woei Cherng Wu ; Jer Chyi Wang / 2893～2897 (0008.jp2)<7894131> -- Fabrication of High-Mobility Nitrided Hafnium Silicate Gate Dielectrics with Sub-1-nm Equivalent Oxide Thickness Using Plasma Nitridation and High-Temperature Postnitridation Annealing/Seiji Inumiya ; Takayoshi Miura ; Kiyoshi Shirai / 2898～2902 (0011.jp2)<7894155> -- Film Structures and Electrical Properties of Pr Silicate Formed by Pulsed Laser Deposition/Keiko Ariyoshi ; Mitsuo Sakashita ; Akira Sakai / 2903～2907 (0013.jp2)<7894163> -- Dielectric Constant Behavior of Hf-O-N System/Tsunehiro Ino ; Yuuichi Kamimuta ; Masamichi Suzuki / 2908～2913 (0016.jp2)<7894174> -- Application of Microwave Plasma Gate Oxidation to Strained-Si／SiGe-on-Insulator/Mika Nishisaka ; Tanemasa Asano / 2914～2918 (0019.jp2)<7894180> -- Analysis of Origin of Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi／SiO2 Gate Stacks/Kenzo Manabe ; Kensuke Takahashi ; Takashi Hase / 2919～2924 (0021.jp2)<7894194> -- Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process/Yoshinori Tsuchiya ; Masato Koyama ; Junji Koga / 2925～2932 (0024.jp2)<7894230> -- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties/Heiji Watanabe ; Shiniti Yoshida ; Yasumasa Watanabe / 2933～2938 (0028.jp2)<7894240> -- Area-Selective Post-Deposition Annealing Process Using Flash Lamp and Si Photoenergy Absorber for Metal／High-k Gate Metal-Insulator-Semiconductor Field-Effect Transistors with NiSi Source／Drain/Takeo Matsuki ; Isamu Nishimura ; Yasushi Akasaka / 2939～2944 (0031.jp2)<7894258> -- Negative Bias Temperature Instability Dependence on Dielectric Thickness and Nitrogen Concentration in Ultra-scaled HfSiON Dielectric／TiN Gate Stacks/Siddarth A. Krishnan ; Manuel Quevedo ; Rusty Harris / 2945～2948 (0034.jp2)<7894264> -- Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States/Motoyuki Sato ; Tomonori Aoyama ; Katsuyuki Sekine / 2949～2953 (0036.jp2)<7894273> -- Characterization of Local Current Leakage in La2O3-Al2O3 Composite Films by Conductive Atomic Force Microscopy/Akiyoshi Seko ; Toshifumi Sago ; Mitsuo Sakashita / 2954～2960 (0039.jp2)<7894285> -- Ultra Shallow Junction Formation Using Plasma Doping and Laser Annealing for Sub-65nm Technology Nodes/Guk-Hyon Yon ; Gyoung Ho Buh ; Tai-su Park / 2961～2964 (0042.jp2)<7894295> -- Effects of Ion Implantation Damage on Elevated Source／Drain Formation for Ultrathin Body Silicon on Insulator Metal Oxide Semiconductor Field-Effect Transistor/Hyuckjae Oh ; Takeshi Sakaguchi ; Takafumi Fukushima / 2965～2969 (0044.jp2)<7894309> -- Development of Hybrid Tight-Binding Quantum Chemical Molecular Dynamics Method and Its Application to Boron Implantation into Preamorphized Silicon Substrate/Tsuyoshi Masuda ; Hideyuki Tsuboi ; Michihisa Koyama / 2970～2974 (0047.jp2)<7894328> -- Characterization and Materials Engineering for Device Integration/ / 2975～ (0049.jp2) -- Formation of Low-Resistivity Nickel Silicide with High Temperature Stability from Atomic-Layer-Deposited Nickel Thin Film/Kwan-Woo Do ; Chung-Mo Yang ; Ik-Su Kang / 2975～2979 (0049.jp2)<7894342> -- Highly Thermal Immune Nitrogen-Doped Ni-Germanosilicide with Co／TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications/Soon-Young Oh ; Jang-Gn Yun ; Yong-Jin Kim / 2980～2983 (0052.jp2)<7894359> -- Nickel Germanide Formation on Condensed Ge Layer for Ge-on-Insulator Device Application/Hoon Choi ; Mungi Park ; Takafumi Fukushima / 2984～2986 (0054.jp2)<7894372> -- Innovative Al Damascene Process for Nanoscale Interconnects/Kyung-In Choi ; Sung-Ho Han ; Sera Yun / 2987～2991 (0055.jp2)<7894381> -- AC Power Loss and Signal Coupling in Very Large Scale Integration Backend Interconnects/C. C. Chen ; H. L. Kao ; C. C. Liao / 2992～2996 (0058.jp2)<7894392> -- Grating Metal Structure with Low-K Benzocyclobutene and Electroplated Copper for High-Q Spiral Inductors/Sung-Ku Yeo ; Seong-Ho Shin ; Young-Se Kwon / 2997～3001 (0060.jp2)<7894408> -- High-Frequency Dielectric Measurement Using Non-contact Probe for Dielectric Materials/Hirofumi Kakemoto ; Song-Min Nam ; Satoshi Wada / 3002～3006 (0063.jp2)<7894423> -- UV-Raman Spectroscopy System for Local and Global Strain Measurements in Si/Atsushi Ogura ; Kosuke Yamasaki ; Daisuke Kosemura / 3007～3011 (0065.jp2)<7894444> -- Photoluminescence Characterization of Strained Si-SiGe-on-Insulator Wafers/Dong Wang ; Koji Matsumoto ; Masahiko Nakamae / 3012～3016 (0068.jp2)<7894456> -- Topography Simulation for Nanometer Semiconductor Process/Jun-Gu Lee ; Sukin Yoon ; Taeyoung Won / 3017～3023 (0070.jp2)<7894464> -- Deep-Trench Etching for Chip-to-Chip Three-Dimensional Integration Technology/Hirokazu Kikuchi ; Yusuke Yamada ; Hitoshi Kijima / 3024～3029 (0074.jp2)<7894473> -- New Three-Dimensional Integration Technology Using Chip-to-Water Bonding to Achieve Ultimate Super-Chip Integration/Takafumi Fukushima ; Yusuke Yamada ; Hirokazu Kikuchi / 3030～3035 (0077.jp2)<7894480> -- Microstructural Evolution of Metal-Insulator-Metal Capacitor Prepared by Atomic-Layer-Deposition System at Elevated Temperature/C. H. Lin ; C. C. Wang ; P. J. Tzeng / 3036～3039 (0080.jp2)<7894488> -- Characteristics of Silicon-on-Low k Insulator Metal Oxide Semiconductor Field Effect Transistor with Metal Back Gate/Yuske Yamada ; Hyuckjae Oh ; Takeshi Sakaguchi / 3040～3044 (0082.jp2)<7894498> -- On the Annealing Effects of GaN Metal-Insulator-Semiconductor Capacitors with Photo-Chemical Vapor Deposition Oxide Layers/Yu-Zung Chiou / 3045～3048 (0084.jp2)<7894544> -- CMOS Devices／Device Physics/ / 3049～ (0086.jp2) -- Investigation and Modeling of Stress Interactions on 90nm Silicon on Insulator Complementary Metal Oxide Semiconductor by Various Mobility Enhancement Approaches/Chien-Ting Lin ; Yean-Kuen Fang ; Wen-Kuan Yeh / 3049～3052 (0086.jp2)<7894554> -- Stress Technology Impact on Device Performances and Reliability for <100> Sub-90nm Silicon-on-Insulator Complementary Metal-Oxide-Semiconductor Field-Effect-Transistors/Chieh-Ming Lai ; Yean-Kuen Fang ; Wen-Kuan Yeh / 3053～3057 (0088.jp2)<7894563> -- Mechanical and Electrical Analysis of Strained Liner Effect in 35nm Fully Depleted Silicon-on-Insulator Devices with Ultra Thin Silicon Channels/C. Gallon ; C. Fenouillet-Beranger ; S. Denorme / 3058～3063 (0091.jp2)<7894573> -- Device Characteristics and Aggravated Negative Bias Temperature Instability in p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Uniaxial Compressive Strain/Chia-Yu Lu ; Horng-Chih Lin ; Yi-Feng Chang / 3064～3069 (0094.jp2)<7894586> -- Electron and Hole Mobilities in Orthorhombically Strained Silicon/Shu-Tong Chang / 3070～3073 (0097.jp2)<7894589> -- Empirical Quantitative Modeling of Threshold Voltage of Sub-50-nm Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor/Yuki Tahara ; Yasuhisa Omura / 3074～3078 (0099.jp2)<7894600> -- Demonstration and Analysis of Accumulation-Mode Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor/Meishoku Masahara ; Kazuhiko Endo ; Yongxun Liu / 3079～3083 (0101.jp2)<7894612> -- Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching/Yongxun Liu ; Etsuro Sugiyama ; Kenichi Ishii / 3084～3087 (0104.jp2)<7894631> -- Analytical Compact Model for Quantization in Undoped Double-Gate Metal Oxide Semiconductor Field Effect Transistors and Its Impact on Quasi-Ballistic Current/Marlene Ferrier ; Raphael Clerc ; Georges Pananakakis / 3088～3096 (0106.jp2)<7894700> -- Investigation of N-Channel Triple-Gate Metal-Oxide-Semiconductor Field-Effect Transistors on (100) Silicon on Insulator Substrate/Kazuhiko Endo ; Meishoku Masahara ; Yongxun Liu / 3097～3100 (0110.jp2)<7894713> -- Hot Carrier Reliability Study in Body-Tied Fin-Type Field Effect Transistors/Jin-Woo Han ; Choong-Ho Lee ; Donggun Park / 3101～3105 (0112.jp2)<7894722> -- P-Channel Tunnel Field-Effect Transistors down to Sub-50nm Channel Lengths/Krishna K. Bhuwalka ; Mathias Born ; Markus Schindler / 3106～3109 (0115.jp2)<7894738> -- Impact of Improved High-Performance Si(110)-Oriented Metal-Oxide-Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices/Weitao Cheng ; Akinobu Teramoto ; Masaki Hirayama / 3110～3116 (0117.jp2)<7894754> -- Advanced Input／Output Technology Using Laterally Modulated Channel Metal-Oxide-Semiconductor Field Effect Transistor for 65-nm Node System on a Chip/Eiji Yoshida ; Youichi Momiyama ; Nobumasa Hasegawa / 3117～3120 (0120.jp2)<7894763> -- Experimental Study on Improving Unclamped Inductive Switching Characteristics of the New Power Metal Oxide Semiconductor Field Effect Transistor Employing Deep Body Contact/In-Hwan Ji ; Young-Hwan Choi ; Soo-Seong Kim / 3121～3124 (0122.jp2)<7894781> -- Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuations in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors/Takamitsu Ishihara ; Ken Uchida ; Junji Koga / 3125～3132 (0124.jp2)<7894796> -- Direct Measurement of Offset Spacer Effect on Carrier Profiles in Sub-50nm p-Metal Oxide Semiconductor Field-Effect Transistors/Hidenobu Fukutome ; Takashi Saiki ; Ryou Nakamura / 3133～3136 (0128.jp2)<7894806> -- Development of Electrical Conductivity Estimation Method Based on Tight-Binding Quantum Chemical Molecular Dynamics Simulation/Hideyuki Tsuboi ; Hiroshi Setogawa ; Michihisa Koyama / 3137～3143 (0130.jp2)<7894818> -- Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for n-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor of 0.13μm Technology/Jung-Chun Lin ; Shuang-Yuan Chen ; Hung-Wen Chen / 3144～3146 (0134.jp2)<7894832> -- Improved Oxidation-Induced Ge Condensation Technique Using H〔+〕 Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator/Masanori Tanaka ; Isao Tsunoda ; Taizoh Sadoh / 3147～3149 (0135.jp2)<7894841> -- Efficient Reduction of Standby Leakage Current in LSIs for Use in Mobile Devices/Hiroshi Kudo ; Kenji Ishikawa ; Yasuyoshi Mishima / 3150～3153 (0137.jp2)<7894855> -- Reliability and Memory Characteristics of Sequential Laterally Solidified Low Temperature Polycrystalline Silicon Thin Film Transistors with an Oxide-Nitride-Oxide Stack Gate Dielectric/Szu-I Hsieh ; Hung-Tse Chen ; Yu-Cheng Chen / 3154～3158 (0139.jp2)<7894876> -- Electrical Characteristics and Reliability of Multi-channel Polycrystalline Silicon Thin-Film Transistors/Ming-Shan Shieh ; Jen-Yi Sang ; Chih-Yang Chen / 3159～3164 (0141.jp2)<7894891> -- Advanced Memory Technology/ / 3165～ (0144.jp2) -- Application of HfSiON to Deep-Trench Capacitors of Sub-45-nm-Node Embedded Dynamic Random-Access Memory/Takashi Ando ; Naoyuki Sato ; Susumu Hiyama / 3165～3169 (0144.jp2)<7894906> -- Performance of Direct Tunneling Floating Gate Memory with Medium-k Dielectrics for Embedded-Random-Access Memory Applications/Bogdan Govoreanu ; Robin Degraeve ; Thomas Kauerauf / 3170～3175 (0147.jp2)<7894925> -- Non-volatile Al2O3 Memory using Nanoscale Al-rich Al2O3 Thin Film as a Charge Storage Layer/Shunji Nakata ; Kunio Saito ; Masaru Shimada / 3176～3178 (0150.jp2)<7894965> -- Characteristics of Band-to-Band Tunneling Hot Hole Injection for Erasing Operation in Charge-Trapping Memory/Lei Sun ; Liyang Pan ; Huiqing Pang / 3179～3184 (0151.jp2)<7894976> -- Technological Trends of Soft Error Estimation Based on Accurate Estimation Method/Yoshiharu Tosaka ; Ryozo Takasu ; Hiedo Ehara / 3185～3188 (0154.jp2)<7894989> -- Current Development Status and Future Challenges of Ferroelectric Random Access Memory Technologies/Sungyung Lee ; Kinam Kim / 3189～3193 (0156.jp2)<7894999> -- Doping Effect of Rare-Earth Ions on Electrical Properties of BiFeO3 Thin Films Fabricated by Chemical Solution Deposition/Sushil K. Singh ; Hiroshi Ishiwara / 3194～3197 (0159.jp2)<7895013> -- Highly Reliable 0.15μm／14 F2 Cell Ferroelectric Random Access Memory Capacitor Using SrRuO3 Buffer Layer/Jang-Eun Heo ; Byoung-Jae Bae ; Dong-Chul Yoo / 3198～3201 (0161.jp2)<7895024> -- Bit Distribution and Reliability of High Density 1.5V Ferroelectric Random Access Memory Embedded with 130nm, 51m Copper Complementary Metal Oxide Semiconductor Logic/K. R. Udayakumar ; K. Boku ; K. A. Remack / 3202～3206 (0163.jp2)<7895035> -- Relationship between Sr2(Ta1-x, Nbx)2O7 Crystal Phase and RF-Sputtering Plasma Condition for Metal-Ferroelectric-Insulator-Si Structure Device Formation/Ichirou Takahashi ; Hiroyuki Sakurai ; Tatsunori Isogai / 3207～3212 (0165.jp2)<7895075> -- Data Retention Characteristics of Nitride-Based Charge Trap Memory Devices with High-k Dielectrics and High-Work-Function Metal Gates for Multi-Gigabit Flash Memory/Jang-Sik Lee ; Chang-Seok Kang ; Yoo-Cheol Shin / 3213～3216 (0168.jp2)<7895081> -- New Magnetic Flash Memory with FePt Magnetic Floating Gate/Cheng-Kuan Yin ; Ji-Chel Bea ; Youn-Gi Hong / 3217～3221 (0170.jp2)<7895090> -- A Novel Magnetic Tunneling Junction Shaped Cell with Large Write Operation Margin for High-Density Magnetoresistive Random Access Memory/Yoshihiro Sato ; Shinya Yagaki ; Kazuo Kobayashi / 3222～3227 (0173.jp2)<7895102> -- Fabrication and Evaluation of Magnetic Tunnel Junction with MgO Tunneling Barrier/Takeshi Sakaguchi ; Hoon Choi ; Ahn Sung-Jin / 3228～3232 (0176.jp2)<7895111> -- Highly Reliable Ring-Type Contact for High-Density Phase Change Memory/Chang-Wook Jeong ; Su-Jin Ahn ; Young-Nam Hwang / 3233～3237 (0178.jp2)<7895121> -- Electrical Properties of Phase Change and Channel Current Control in Ultrathin Phase-Change Channel Transistor Memory by Annealing/You Yin ; Akihira Miyachi ; Daisuke Niida / 3238～3242 (0181.jp2)<7895137> -- Reversible Resistive Switching in Bi4Ti3O12 Thin Films Deposited by Electron Cyclotron Resonance Sputtering/Yoshito Jin ; Hideaki Sakai ; Masaru Shimada / 3243～3246 (0183.jp2)<7895145> -- Advanced Circuits and Systems/ / 3247～ (0185.jp2) -- Systematic Analysis and Modeling of On-Chip Spiral Inductors for Complementary Metal Oxide Semiconductor Radio Frequency Integrated Circuits Applications/Mao-Chyuan Tang ; Yean-Kuen Fang ; Wen-Kuan Yeh / 3247～3250 (0185.jp2)<7895156> -- A Logarithmic Response Complementary Metal Oxide Semiconductor Image Sensor with Parasitic P-N-P Bipolar Junction Transistor/Cheng-Hsiao Lai ; Liang-Wei Lai ; Wen-Jen Chiang / 3251～3255 (0187.jp2)<7895162> -- Neutron-Induced Soft-Error Simulation Technology for Logic Circuits/Taiki Uemura ; Yoshiharu Tosaka ; Shigeo Satoh / 3256～3259 (0190.jp2)<7895171> -- Quantitative Derivation and Evaluation of Wire Length Distribution in Three-Dimensional Integrated Circuits Using Simulated Quenching/Jun Deguchi ; Takeaki Sugimura ; Yoshihiro Nakatani / 3260～3265 (0192.jp2)<7895176> -- Mismatches after Hot-Carrier Injection in Advanced Complementary Metal-Oxide-Semiconductor Technology Particularly for Analog Applications/Shuang-Yuan Chen ; Jung-Chun Lin ; Hung-Wen Chen / 3266～3271 (0195.jp2)<7895183> -- Analysis of Transmission Characteristics of Gaussian Monocycle Pulses for Silicon Integrated Antennas/Kentaro Kimoto ; Nobuo Sasaki ; Pran Kanai Saha / 3272～3278 (0198.jp2)<7895209> -- A 2.4GHz Differential Wavelet Generator in 0.18μm Complementary Metal-Oxide-Semiconductor for 1.4Gbps Ultra-Wideband Impulse Radio in Wireless Inter／Intra-Chip Data Communication/Pran Kanai Saha ; Nobuo Sasaki ; Kentaro Kimoto / 3279～3285 (0201.jp2)<7895222> -- Measurement of Inductive Coupling in Wireless Superconnect/Daisuke Mizoguchi ; Noriyuki Miura ; Yoichi Yoshida / 3286～3289 (0205.jp2)<7895230> -- A Novel Fast Lock-in Phase-Locked Loop Frequency Synthesizer with Direct Frequency Presetting Circuit/Xiaofei Kuang ; Nanjian Wu ; Guoliang Shou / 3290～3294 (0207.jp2)<7895242> -- A Memory-Based Programmable Logic Device Using Look-Up Table Cascade with Synchronous Static Random Access Memories/Kazuyuki Nakamura ; Tsutomu Sasao ; Munehiro Matsuura / 3295～3300 (0209.jp2)<7895255> -- Stochastic Computing Chip for Measurement of Manhattan Distance/Michihiro Hori ; Michihito Ueda ; Atsushi Iwata / 3301～3306 (0212.jp2)<7895270> -- Advocating Noise as an Agent for Ultra-Low Energy Computing: Probabilistic Complementary Metal-Oxide-Semiconductor Devices and Their Characteristics/Pinar Korkmaz ; Bilge E.S. Akgul ; Krishna V. Palem / 3307～3316 (0215.jp2)<7895282> -- A New Protective Circuit to Improve Short-Circuit Withstanding Capability of a Lateral Emitter Switched Thyristor/Young-Hwan Choi ; In-Hwan Ji ; Byung-Chul Jeon / 3317～3320 (0220.jp2)<7895293> -- Low-Power and High-Sensitivity Magnetoresistive Random Access Memory Sensing Scheme with Body-Biased Preamplifier/Takeaki Sugimura ; Jun Deguchi ; Hoon Choi / 3321～3325 (0222.jp2)<7895304> -- Novel Operation Scheme for Realizing Combined Linear-Logarithmic Response in Photodiode-Type Active Pixel Sensor Cells/Atsushi Hamasaki ; Mamoru Terauchi ; Kenju Horii / 3326～3329 (0225.jp2)<7895311> -- High-Throughput Configurable Motion Estimation Processor Core for Video Applications/Yeong-Kang Lai ; Lien-Fei Chen / 3330～3335 (0227.jp2)<7895318> -- A Reconfigurable Computing Processor Core for Multimedia System-on-Chip Applications/Yeong-Kang Lai ; Lien-Fei Chen ; Jian-Chou Chen / 3336～3342 (0230.jp2)<7895324> -- New Partial Correlation-type Matched Filter for Zero Correlation Duration Sequence and its Advanced Television Systems Committee-Digital Television Application/JaeSang Cha ; Seong-Kweon Kim ; YongTae Lee / 3343～3348 (0233.jp2)<7895333> -- Compound Semiconductor Circuits, Electron Devices and Device Physics/ / 3349～ (0236.jp2) -- Enhancement-Mode High Electron Mobility Transistors Lattice-Matched to InP Substrates Utilizing Ti／Pt／Au Metallization/Jae-Hyung Jang ; Seiyon Kim ; Ilesanmi Adesida / 3349～3354 (0236.jp2)<7895339> -- In0.49GaP／Al0.45GaAS Barrier Enhancement-Mode Pseudomorphic High Electron Mobility Transistor with High Gate Turn-on Voltage and High Linearity/Kyoungchul Jang ; Juyong Lee ; Jaehak Lee / 3355～3357 (0239.jp2)<7895346> -- Comparative Study of DC and Microwave Characteristics of 0.12μm Double-Recessed Gate AlGaAs／InGaAs／GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process/Jong-Won Lim ; Ho-Kyun Ahn ; Hong-Gu Ji / 3358～3363 (0241.jp2)<7895359> -- High Performance AlGaN／GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Fabricated Using SiN／SiO2／SiN Triple-Layer Insulators/Akira Endoh ; Yoshimi Yamashita ; Nobumitsu Hirose / 3364～3367 (0244.jp2)<7895393> -- AlGaN／GaN High Electron Mobility Transistors with Inclined-Gate-Recess Structure/Yuma Aoi ; Yutaka Ohno ; Shigeru Kishimoto / 3368～3371 (0246.jp2)<7895400> -- Improvement in Linearity of Novel InGaAsN-Based High Electron Mobility Transistors/Y. K. Su ; W. C. Chen ; S. H. Hsu / 3372～3375 (0248.jp2)<7895403> -- High Electron Mobility Transistors Yield Improvement with Ultrasonically Assisted Recess for High-Speed Integrated Circuits/Seong-Jin Yeon ; Hyungtae Kim ; Jongwon Lee / 3376～3379 (0250.jp2)<7895409> -- Extremely Low Noise Characteristics of 0.15μm Power Metamorphic High-Electron-Mobility Transistors/Jae Yeob Shim ; Hyung Sup Yoon ; Dong Min Kang / 3380～3383 (0252.jp2)<7895415> -- High-Speed Digital Circuits Using InP-based Resonant Tunneling Diode and High Electron Mobility Transistor Heterostructure/Hyungtae Kim ; Seongjin Yeon ; Sangsub Song / 3384～3386 (0254.jp2)<7895421> -- p-InGaN／n-GaN Vertical Conducting Diodes on n〔+〕-SiC Substrate for High Power Electronic Device Applications/Atsushi Nishikawa ; Kazuhide Kumakura ; Tetsuya Akasaka / 3387～3390 (0255.jp2)<7895433> -- New Inductively Coupled Plasma-Chemical Vapor Deposition SiO2 Passivation for High-Voltage Switching AlGaN／GaN Heterostructure Field-Effect Transistors/Min-Woo Ha ; Seung-Chul Lee ; Jin-Cherl Her / 3391～3394 (0257.jp2)<7895447> -- Influence of Lattice Constants of GaN and InGaN on npn-Type GaN／InGaN Heterojunction Bipolar Transistors/Toshiki Makimoto ; Takatoshi Kido ; Kazuhide Kumakura / 3395～3397 (0259.jp2)<7895459> -- Suppression of Leakage Current of Ni／Au Schottky Barrier Diode Fabricated on AlGaN／GaN Heterostructure by Oxidation/Seung-Chul Lee ; Min-Woo Ha ; Ji-Yong Lim / 3398～3400 (0261.jp2)<7895468> -- Compact RF Switch ICs Using Dielectric Overhang Gate Process and Stacked Inductor/Kyoungchul Jang ; Juyoung Lee ; Sungwon Kim / 3401～3404 (0262.jp2)<7895480> -- Noise Analysis of Nitride-Based Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors with Photo-Chemical Vapor Deposition SiO2 Gate Oxide in the Linear and Saturation Regions/Yu-Zung Chiou ; Yan-Kuin Su ; Jeng Gong / 3405～3409 (0264.jp2)<7895489> -- Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta-Sigma Modulator for High Resolution, Wide Band Analog-to-Digital Converters/Koichi Maezawa ; Mario Sakou ; Wataru Matsubara / 3410～3413 (0267.jp2)<7895501> -- Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process/Takeshi Kimura ; Hideki Hasegawa ; Taketomo Sato / 3414～3422 (0269.jp2)<7895514> -- Photon Devices and Device Physics/ / 3423～ (0273.jp2) -- 1.55-μm-Waveband Emissions from Sb-Based Quantum-Dot Vertical-Cavity Surface-Emitting Laser Structures Fabricated on GaAs Substrate/Naokatsu Yamamoto ; Kouichi Akahane ; Shin-ichirou Gozu / 3423～3426 (0273.jp2)<7895526> -- Self-Formation of High-Density and High-Uniformity InAs Quantum Dots on Sb／GaAs Layers by Molecular Beam Epitaxy/Masahiko Ohta ; Toru Kanto ; Koichi Yamaguchi / 3427～3429 (0275.jp2)<7895536> -- Characteristics of Flip-Chip InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates/Wei-Kai Wang ; Dong-Sing Wuu ; Shu-Hei Lin / 3430～3432 (0277.jp2)<7895548> -- GaN-Based Green Resonant Cavity Light-Emitting Diodes/Shih-Yung Huang ; Ray-Hua Horng ; Wei-Kai Wang / 3433～3435 (0278.jp2)<7895554> -- Effect of Surface Treatment on the Performance of Vertical-Structure GaN-Based High-Power Light-Emitting Diodes with Electroplated Metallic Substrates/Kai-Ming Uang ; Shui-Jinn Wang ; Shiue-Lung Chen / 3436～3441 (0280.jp2)<7895561> -- Enhanced Light Output in InGaN／GaN Light Emitting Diodes with Excimer Laser Etching Surfaces/Hung-Wen Huang ; Jung-Tang Chu ; Chih-Chiang Kao / 3442～3445 (0283.jp2)<7895568> -- Fabrication and Characteristics of GaN-Based Microcavity Light-Emitting Diodes with High Reflectivity AlN／GaN Distributed Bragg Reflectors/Yu-Chun Peng ; Chih-Chiang Kao ; Hung-Wen Huang / 3446～3448 (0285.jp2)<7895577> -- Improvements of N-Side-up GaN Light-Emitting Diodes Performance by Indium-Tin-Oxide／Al Mirror/Shao-Hua Huang ; Ray-Hua Horng ; Dong-Sing Wuu / 3449～3452 (0286.jp2)<7895588> -- Emission Properties of InGaAsSbN Quantum Well Laser Diodes in 2μm Wavelength Region Grown on InP Substrates/Yuichi Kawamura ; Tomokatsu Nakagawa ; Naohisa Inoue / 3453～3456 (0288.jp2)<7895599> -- All-Optical Clock Recovery and Wavelength Conversion by Combination of Self-Pulsation Laser and Semiconductor Optical-Amplifier-Based Mach-Zehnder Interferometer/Satoshi Nishikawa ; Mitsunobu Gotoda ; Tetsuya Nishimura / 3457～3461 (0290.jp2)<7895613> -- Highly Enhanced Efficiency and Stability of Photo- and Electro-luminescence of Nano-crystalline Porous Silicon by High-Pressure Water Vapor Annealing/Bernard Gelloz ; Nobuyoshi Koshida / 3462～3465 (0293.jp2)<7895624> -- Reduction of Random Noise in Complementary Metal Oxide Semiconductor Image Sensors by Gate Oxide Interface Control/Jongwan Jung ; Doowon Kwon ; Duck-Hyung Lee / 3466～3469 (0295.jp2)<7895630> -- Highly and Variably Sensitive Complementary Metal Oxide Semiconductor Active Pixel Sensor Using P-Channel Metal Oxide Semiconductor Field Effect Transistor-Type Photodetector with Transfer Gate/Sang-Ho Seo ; Sung-Ho Lee ; Mi-Young Do / 3470～3474 (0297.jp2)<7895639> -- Improved Efficiency-Bandwidth Product of Modified Uni-Traveling Carrier Photodiode Structures Using an Undoped Photo-Absorption Layer/Dong-Hwan Jun ; Jae-Hyung Jang ; Ilesanmi Adesida / 3475～3478 (0299.jp2)<7895648> -- Quick Response Observed in Solid-State Electrochromic Device with Interfacial Barrier Structure/Hideo Yoshimura ; Nobuyoshi Koshida / 3479～3481 (0301.jp2)<7895654> -- Groove-Buried Optical Waveguides Based on Metal Organic Solution-Derived Amorphous Ba0.7Sr0.3TiO3 Thin Films/Zhimou Xu ; Masato Suzuki ; Yuichiro Tanushi / 3482～3487 (0303.jp2)<7895673> -- Structural and Optical Properties of Electro-Optic Material: Sputtered (Ba, Sr)TiO3/Masato Suzuki ; Zhimou Xu ; Yuichiro Tanushi / 3488～3492 (0306.jp2)<7895682> -- Design and Simulation of Ring Resonator Optical Switches using Electro-Optic Materials/Yuichiro Tanushi ; Shin Yokoyama / 3493～3497 (0308.jp2)<7895686> -- Fabrication of Spin-Coated Optical Waveguides for Optically Interconnected LSI and Influence of Fabrication Process on Underlying Metal-Oxide-Semiconductor Capacitors/Tetsuo Tabei ; Kazuhiko Maeda ; Shin Yokoyama / 3498～3503 (0311.jp2)<7895692> -- Multichip Shared Memory Module with Optical Interconnection for Parallel-Processor System/Hirofumi Kuribara ; Hiroyuki Hashimoto ; Takafumi Fukushima / 3504～3509 (0314.jp2)<7895699> -- Dynamic Optically Reconfigurable Gate Array/Minoru Watanabe ; Fuminori Kobayashi / 3510～3515 (0317.jp2)<7895708> -- Fabrications of Si Thin-Film Solar Cells by Hot-Wire Chemical Vapor Deposition and Laser Doping Techniques/Shui-Yang Lien ; Dong-Sing Wuu ; Hsin-Yuan Mao / 3516～3518 (0320.jp2)<7895719> -- Advanced Material Synthesis and Crystal Growth Technology/ / 3519～ (0321.jp2) -- Growth of Boron Nitride on 6H-SiC Substrate by Flow-Rate Modulation Epitaxy/Yasuyuki Kobayashi ; Toshiki Makimoto / 3519～3521 (0321.jp2)<7895722> -- Nature of Deep-Level Defects in GaCrN Diluted Magnetic Semiconductor/Shanthi Subashchandran ; Shigeya Kimura ; Moo Seong Kim / 3522～3525 (0323.jp2)<7895728> -- Electrical, Optical and Material Properties of ZnO-Doped Indium-Tin Oxide Films Prepared Using Radio Frequency Magnetron Cosputtering System at Room Temperature/Day-Shan Liu ; Chun-Hsing Lin ; Bing-Wen Huang / 3526～3530 (0325.jp2)<7895751> -- The Preparation of Piezoelectric ZnO Films by RF Magnetron Sputtering for Layered Surface Acoustic Wave Device Applications/Day-Shan Liu ; Cheng-Yang Wu ; Chia-Sheng Sheu / 3531～3536 (0327.jp2)<7895760> -- Triple Luminescence Peaks Observed in the InGaAsN／GaAa Single Quantum Well Grown by Metalorganic Vapor Phase Epitaxy/W. C. Chen ; Y. K. Su ; R. W. Chuang / 3537～3539 (0330.jp2)<7895766> -- Growth of GaNAs／GaAs Multiple Quantum Well by Molecular Beam Epitaxy Using Modulated N Radical Beam Source/Katsuhiro Takao ; Kensuke Fujii ; Hayato Miyagawa / 3540～3543 (0332.jp2)<7895777> -- Interface States of AlSb／InAs Heterointerface with AlAs-Like Interface/Shin-ichiro Gozu ; Kouichi Akahane ; Naokatsu Yamamoto / 3544～3547 (0334.jp2)<7895793> -- Structural Analyses of Fractional Monolayer (GaAs)m／(AlAs)n Superlattices by X-ray Resonant／Off-Resonant Scattering/Hayato Miyagawa ; Shyun Koshiba ; Katsuhiro Takao / 3548～3551 (0336.jp2)<7895809> -- Precise Control of Vertical-Cavity Surface-Emitting Laser Structural Growth Using Molecular Beam Epitaxy In Situ Reflectance Monitor/Mitsuhiro Mizutani ; Fumiharu Teramae ; Kazutaka Takeuchi / 3552～3555 (0338.jp2)<7895823> -- Selective Formation of Self-Organized InAs Quantum Dots Grown on Patterned GaAs Substrates by Molecular Beam Epitaxy/Akio Ueta ; Kouichi Akahane ; Shin-ichioro Gozu / 3556～3559 (0340.jp2)<7895838> -- Study of InGaN Multiple Quantum Dots by Metal Organic Chemical Vapor Deposition/Te-Chung Wang ; Hao-Chung Kuo ; Tien-Chang Lu / 3560～3563 (0342.jp2)<7895846> -- Mechanism of Quantum Dot Formation by Postgrowth Annealing of Wetting Layer/Haizhi Song ; Tatsuya Usuki ; Yoshiaki Nakata / 3564～3567 (0344.jp2)<7895852> -- Multi-Quantum Structures of GaAs／AlGaAs Free-Standing Nanowires/Kouta Tateno ; Hideki Gotoh ; Yoshio Watanabe / 3568～3572 (0346.jp2)<7895861> -- Chemical Modification of Multiwalled Carbon Nanotubes by Vacuum Ultraviolet Irradiation Dry Process/Koji Asano ; Daiyu Kondo ; Akio Kawabata / 3573～3576 (0348.jp2)<7895872> -- Crystal Growth Mechanism of Spherical Silicon Fabricated by Dropping Method/Satoshi Omae ; Takashi Minemoto ; Mikio Murozono / 3577～3580 (0350.jp2)<7895875> -- Influence of H2／SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition/Hiromasa Ohmi ; Hiroaki Kakiuchi ; Kiyoshi Yasutake / 3581～3586 (0352.jp2)<7895883> -- High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells Using Very High Frequency Plasma at Atmospheric Pressure/Hiroaki Kakiuchi ; Hiromasa Ohmi ; Yasuhito Kuwahara / 3587～3591 (0355.jp2)<7895893> -- Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode/Kiyoshi Yasutake ; Hiromasa Ohmi ; Hiroaki Kakiuchi / 3592～3597 (0358.jp2)<7895902> -- Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si(111) Substrate/Taizoh Sadoh ; Hisashi Takeuchi ; Koji Ueda / 3598～3600 (0361.jp2)<7895909> -- Surface Hall Potentiometry for Characterizing Semiconductor Films/Kenta Arima ; Kenji Hiwa ; Ryoji Nakaoka / 3601～3605 (0362.jp2)<7895919> -- Physics and Applications of Novel Functional Materials and Devices/ / 3606～ (0365.jp2) -- Studies on Metal-Oxide-Semiconductor Field-Effect Transistor Low-Frequency Noise for Electrometer Applications/Nicolas Clement ; Hiroshi Inokawa ; Yukinori Ono / 3606～3608 (0365.jp2)<7895923> -- RF Performance of Diamond Metel-Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit/Haitao Ye ; Makoto Kasu ; Kenji Ueda / 3609～3613 (0366.jp2)<7895931> -- Embedded Nanowire Network Growth and Node Device Fabrication for GaAs-Based High-Density Hexagonal Binary Decision Diagram Quantum Circuits/Takahiro Tamura ; Isao Tamai ; Seiya Kasai / 3614～3620 (0369.jp2)<7895934> -- Development of Electrically Driven Single-Quantum-Dot Device at Optical Fiber Bands/Toshiyuki Miyazawa ; Jun Tatebayashi ; Shinichi Hirose / 3621～3624 (0372.jp2)<7895950> -- Pulse Area Control of Exciton Rabi Oscillation in InAs／GaAs Single Quantum Dot/Keishiro Goshima ; Kazuhiro Komori ; Shohgo Yamauchi / 3625～3628 (0374.jp2)<7895959> -- Real-Time Observation of Charge States and Energy Relaxation in a Double Quantum Dot/Toshiaki Hayashi ; Toshimasa Fujisawa ; Ritsuya Tomita / 3629～3632 (0376.jp2)<7895964> -- One-Dimensional Shell Structures and Excitation Spectrum in Single-Wall Carbon Nanotube Quantum Dots/Satoshi Moriyama ; Tomoko Fuse ; Masaki Suzuki / 3633～3637 (0378.jp2)<7895970> -- Observation and Analysis of Tunneling Properties of Single Spherical Nanocrystalline Silicon Quantum Dot/Akhmadi Surawijaya ; Hiroshi Mizuta ; Shunri Oda / 3638～3641 (0381.jp2)<7895985> -- Acoustic Emission Characteristics of Nanocrystalline Porous Silicon Device Driven as an Ultrasonic Speaker/Kenji Tsubaki ; Takuya Komoda ; Nobuyoshi Koshida / 3642～3644 (0383.jp2)<7895991> -- Characteristics of Thermally Induced Ultrasonic Emission from Nanocrystalline Porous Silicon Device under Impulse Operation/Yoshifumi Watabe ; Yoshiaki Honda ; Nobuyoshi Koshida / 3645～3647 (0384.jp2)<7895999> -- Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device/Victor Ryzhii ; Maxim Ryzhii ; Irina Khmyrova / 3648～3651 (0386.jp2)<7896013> -- Ultrafast Exciton Dynamics in (AlAs)0.3／(GaAs)0.7 Ultrashort-Pperiod Superlattice/Shin-ichi Takizawa ; Hideki Hari ; Yasuteru Miyaoka / 3652～3655 (0388.jp2)<7896017> -- Room-Temperature Electroluminescence from Single-Period (CdF2／CaF2) Inter-Subband Quantum Cascade Structure on Si substrate/Keisuke Jinen ; Takeshi Kikuchi ; Masahiro Watanabe / 3656～3658 (0390.jp2)<7896031> -- Electroluminescence of Oxygen-Deficient YAlO3 Crystals with Dopants/Masanori Ando ; Toru Sakaguchi ; Akio Yamanaka / 3659～3661 (0391.jp2)<7896039> -- Ultraviolet Lasing of Sol-Gel-Derived Zinc Oxide Polycrystalline Films/Shou-Yi Kuo ; Fang-I Lai ; Wei-Chun Chen / 3662～3665 (0393.jp2)<7896045> -- Effect of Ion Diffusion on Switching Voltage of Solid-Electrolyte Nanometer Switch/Naoki Banno ; Toshitsugu Sakamoto ; Tsuyoshi Hasegawa / 3666～3668 (0395.jp2)<7896058> -- Ultrasensitive Ozone Detection Using Single-Walled Carbon Nanotube Networks/Winadda Wongwiriyapan ; Shin-ichi Honda ; Hirofumi Konishi / 3669～3671 (0396.jp2)<7896073> -- Carbon Nanotube Transistor Fabrication Assisted by Topographical and Conductive Atomic Force Microscopy/Lorraine Rispal ; Yordan Stefanov ; Frank Wessely / 3672～3679 (0398.jp2)<7896085> -- Novel Method of Convering Metallic-Type Carbon Nanotubes to Semiconducting-Type Carbon Nanotube Field-Effect Transistors/Bae-Horng Chen ; Jeng-Hua Wei ; Po-Yuan Lo / 3680～3685 (0402.jp2)<7896098> -- Fabrication and Electrical Characterization of Nanoscaled-Schottky Diodes Based on Metal Silicide／Silicon Nanowires with Scanning Probe Lithography and Wet Etching/Jeng Tzong Sheu ; Sheng Pin Yeh ; Chen Hsin Lien / 3686～3689 (0405.jp2)<7896112> -- Synthesis of Metal-Alloy-Coated Nanowires toward Functional Scanning Probe Microscope/Hirofumi Konishi ; Shin-ichi Honda ; Masaru Kishida / 3690～3692 (0407.jp2)<7896121> -- Selective Deposition of Gold Particles on Dip-Pen Nanolithography Patterns on Silicon Dioxide Surfaces/Jeng-Tzong Sheu ; Chia-Hao Wu ; Tieng-Sheng Chao / 3693～3697 (0408.jp2)<7896129> -- Organic Materials Science, Device Physics, and Applications/ / 3698～ (0411.jp2) -- Improvement in On／Off Ratio of Pentacene Static Induction Transistors with Ultrathin CuPc Layer/Yasuyuki Watanabe ; Hiroyuki Iechi ; Kazuhiro Kudo / 3698～3703 (0411.jp2)<7896201> -- Study of Carrier Transport by Pentacene Thin-Film Transistors at High Temperatures/Po-Yuan Lo ; Zing-Way Pei ; Jiunn-Jye Hwang / 3704～3707 (0414.jp2)<7896213> -- Single Grain and Single Grain Boundary Resistance of Pentacene Thin Film Characterized Using a Nanoscale Electrode Array/Tomohiko Edura ; Hiromasa Takahashi ; Masashi Nakata / 3708～3711 (0416.jp2)<7896229> -- Maxwell-Wagner Model Analysis for the Capacitance-Voltage Characteristics of Pentacene Field Effect Transistor/Eunju Lim ; Takaaki Manaka ; Ryosuke Tamura / 3712～3716 (0418.jp2)<7896240> -- Effects of Thickness of Organic and Multilayer Anode on Luminance Efficiency in Top-Emission Organic Light Emitting Diodes/Shin-Ju Lin ; Han-Yi Ueng ; Fuh-Shyang Juang / 3717～3720 (0420.jp2)<7896251> -- Study of Transient Electroluminescence Process Using Organic Light-Emitting Diode with Partial Doping Layer/Hirotake Kajii ; Kazuya Takahashi ; Ju-Seung Kim / 3721～3724 (0422.jp2)<7896259> -- Characteristics of Electroluminescence Based on Zn Complexes/Yoon-Ki Jang ; Dong-Eun Kim ; Won-Sam Kim / 3725～3728 (0424.jp2)<7896264> -- Improvement in Luminance Efficiency by Insertion of Buffer Layers in Flexible Organic Light-Emitting Diodes/Tsung-Hsien Yang ; Fuh-Shyang Juang ; Yu-Sheng Tsai / 3729～3732 (0426.jp2)<7896272> -- Characteristics of Polymer Light Emitting Diodes with the LiF Anode Interfacial Layer/Sunyoung Sohn ; Keunhee Park ; Daewoo Lee / 3733～3736 (0428.jp2)<7896282> -- Effects of CsF／Metal Interface on Electron Injection in Polymer Light-Emitting Diodes/Zenken Kni ; Kazuo Yoshihara ; Hirotake Kajii / 3737～3741 (0430.jp2)<7896288> -- Experimental Study of Chemical Reaction between LiF and Polyflourene Interface during Sputtering Indium-Tin Oxide Cathode for Top Emission Polymer Light Emitting Devices/K. C. Liu ; C. W. Teng ; C. C. Lee / 3742～3745 (0433.jp2)<7896296> -- Improvement of Electroluminescence Efficiency of Blue-Polymer-Light-Emitting Diodes Using Polymer Hole-Transporting and Electron-Transporting Layers/Jian Li ; Takeshi Sano ; Yasuko Hirayama / 3746～3749 (0435.jp2)<7896308> -- Organic Multifunction Diodes Operable for Emission and Photodetection Modes/Hiroyuki Shimada ; Junya Yanagi ; Yohsuke Matsushita / 3750～3753 (0437.jp2)<7896313> -- Electrical Bistability of Organic Thin-Film Device Using Ag Electrode/Masaya Terai ; Katsuhiko Fujita ; Tetsuo Tsutsui / 3754～3757 (0439.jp2)<7896318> -- Facile Fabrication and Photolectrochemical Properties of Porphyrin-Fullerene Assemblies by Self-Assembly and Surface Sol-Gel Processes/Tsuyoshi Akiyama ; Ken-ichi Matsuoka ; Taichi Arakawa / 3758～3761 (0441.jp2)<7896326> -- Photocurrents Generated under Forward Biases in Organic Thin-Film Solar Cells with Organic Heterojunction Structure/Takahiro Osasa ; Shuhei Yamamoto ; Michio Matsumura / 3762～3765 (0443.jp2)<7896331> -- Fabrication of Planar Nano-gap Electrodes for Single Molecule Evaluation (Brief Communication)〔published April 25, 2006〕/Masashi NAKATA ; Tomohiko EDURA ; Ken TSUTSUI ; Masahide TOKUDA ; Harumasa ONOZATO ; Tadao KANEKO ; Kazuyuki NAGATSUMA ; Masayuki MORITA ; Kenji ITAKA ; Hideomi KOINUMA ; Yasuo WADA / 3766～ (0445.jp2) -- Electronic and Transport Properties of Ferrocene: Theoretical Study/Tomoki Uehara ; Rodion V. Belosludov ; Amir A. Farajian / 3768～3771 (0446.jp2)<7896338> -- Influence of Anions on Electrochemical Redox Reactions and Electrical Properties using a Viologen Derivative/Dong-Yun Lee ; A. K. M. Kafi ; Sang-Hyun Park / 3772～3775 (0448.jp2)<7896346> -- Micro／Nano Electromechanical and Bio-Systems/ / 3776～ (0450.jp2) -- Immobilization of DNA Probes onto Gold Surface and its Application to Fully Electric Detection of DNA Hybridization using Field-Effect Transistor Sensor/Yu Ishige ; Maki Shimoda ; Masao Kamahori / 3776～3783 (0450.jp2)<7896360> -- Evaluation of Electrical Stimulus Current Applied to Retina Cells for Retinal Prosthesis/Keita Motonami ; Taiichiro Watanabe ; Jun Deguchi / 3784～3788 (0454.jp2)<7896382> -- Piezoresistive Rotation Angle Sensor Integrated in Micromirror/Minoru Sasaki ; Motoki Tabata ; Tsukasa Haga / 3789～3793 (0456.jp2)<7896390> -- Photosensing Resolution of Wireless Communication Chip in Inhomogeneous RF-Magnetic Field/Takehiko Hasebe ; Yoshiaki Yazawa ; Takashi Tase / 3794～3798 (0459.jp2)<7896398> -- A Complementary Metal-Oxide-Semiconductor Image Sensor for On-Chip in Vitro and in Vivo Imaging of the Mouse Hippocampus/David C. Ng ; Takashi Tokuda ; Akio Yamamoto / 3799～3806 (0461.jp2)<7896405> -- Thickness Effects on pH Response of HfO2 Sensing Dielectric Improved by Rapid Thermal Annealing/Chao-Sung Lai ; Chia-Ming Yang ; Tseng-Fu Lu / 3807～3810 (0465.jp2)<7896423> -- Vibration Characteristics of Piezoelectric Lead Zirconate Titanate by Fluid Flow in Intravascular Oxygenator/Gi-Beum Kim ; Chul-Un Hong ; Tae-Kyu Kwon / 3811～3817 (0467.jp2)<7896427> -- Fabrication InGaN Nanodisk Structure in GaN Reverse Hexagonal Pyramid/Chia-Feng Lin ; Jing-Jie Dai ; Jing-Hui Zheng / 3818～3821 (0471.jp2)<7896431> -- Thinning Technology for Lithium Niobate Wafer by Surface Activated Bonding and Chemical Mechanical Polishing/Chia-Cheng Wu ; Ray-Hua Horng ; Dong-Sing Wuu / 3822～3827 (0473.jp2)<7896438> -- Cumulative Author Index of Volume 45, 2006, Part 1/ / 1～ (0476.jp2)
  • Document Type: 雑誌
  • Language: English ; French ; German
  • Rights: 国立国会図書館／図書館送信参加館内公開
  • Notes: 国立国会図書館雑誌記事索引 35 (5A) 1996.05～46 (12) 2007.12 ; Description based on the latest issue ; Title varies slightly ; 29 (11) =341 ; With: Suppl ; 総目次・総索引あり

Klicken Sie ein Format an und speichern Sie dann die Daten oder geben Sie eine Empfänger-Adresse ein und lassen Sie sich per Email zusenden.

oder
oder

Wählen Sie das für Sie passende Zitationsformat und kopieren Sie es dann in die Zwischenablage, lassen es sich per Mail zusenden oder speichern es als PDF-Datei.

oder
oder

Bitte prüfen Sie, ob die Zitation formal korrekt ist, bevor Sie sie in einer Arbeit verwenden. Benutzen Sie gegebenenfalls den "Exportieren"-Dialog, wenn Sie ein Literaturverwaltungsprogramm verwenden und die Zitat-Angaben selbst formatieren wollen.

xs 0 - 576
sm 576 - 768
md 768 - 992
lg 992 - 1200
xl 1200 - 1366
xxl 1366 -