Einzeltreffer — DigiBib

Titel:	Japanese journal of applied physics. JJAP : Japanese journal of applied physics
Autor/in / Beteiligte Person:	応用物理学会
Link:	View record in National Diet Library Digital Collections (Volltext)
Zeitschrift:	Part, Jg. Part. 1 (1997-11-01)
Veröffentlichung:	Tokyo: Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics, 1997
Medientyp:	serialPeriodical
Umfang:	v. ; 30 cm
ISSN:	0021-4922 (print)
Sonstiges:	Nachgewiesen in: National Diet Library Digital Collections - 国立国会図書館デジタルコレクション Sprachen: English, French, German Contents Note: CONTENTS/ / (0002.jp2) -- Semiconductors/ / 6579～ (0004.jp2) -- Electronically Induced Instability of a Hydrogen-Carbon Complex in Silicon and Its Dissociation Mechanism/Yoichi Kamiura ; Masao Hayashi ; Yoshihide Nishiyama / 6579～6590 (0004.jp2)<4371418> -- Self-Interstitials in Silicon/Takahisa Okino ; Toshitada Shimosaki ; Ryoichi Takaue / 6591～6594 (0010.jp2)<4371419> -- Formation of Grown-in Defects during Czochralski Silicon Crystal Growth/Hideshi Nishikawa ; Tadami Tanaka ; Yoshio Yanase / 6595～6600 (0012.jp2)<4371420> -- Gettering Characteristics of Heavy Metal Impurities in Silicon Wafers with Polysilicon Back Seal and Internal Gettering/Satoshi Ogushi ; Shinsuke Sadamitsu ; Kieran Marsden / 6601～6606 (0015.jp2)<4371421> -- The Γc-Γv Transition Energies of AlxIn1-xP Alloys/Yoshihiro Ishitani ; Hiroshi Hamada ; Shigekazu Minagawa / 6607～6613 (0018.jp2)<4371422> -- The Microstructure of As Precipitates in Si Delta-Doped GaAs Grown by Low-Temperature Molecular Beam Epitaxy/Li Zen Hsieh ; Jin Hua Huang ; Zi Ang Su / 6614～6619 (0022.jp2)<4371423> -- As Surface Segregation during the Growth of GaInP on GaAs/Olivier Dehaese ; Xavier Wallart ; Olivier Schuler / 6620～6624 (0025.jp2)<4371424> -- Effects of the Addition of SiF4 to the SiH4 Feed Gas for Depositing Polycrystalline Silicon Films at Low Temperature/Moniruzzaman Syed ; Takao Inokuma ; Yoshihiro Kurata / 6625～6632 (0027.jp2)<4371425> -- Atomically Flat 3C-SiC Epilayers by Low Pressure Chemical Vapor Deposition/Yuuki Ishida ; Tetsuo Takahashi ; Hajime Okumura / 6633～6637 (0031.jp2)<4371426> -- Non-Contact and Non-Destructive Measurement of Carrier Concentration of Nitrogen-Doped ZnSe by Reflectance Difference Spectroscopy/Cheng-Guo Jin ; Tetsuji Yasuda ; Kozo Kimura / 6638～6644 (0034.jp2)<4371427> -- Crystal Growth and Optical Properties of CuAl(SxSe1-x)2 Alloys/Sho Shirakata ; Shigefusa Chichibu ; Shigehiro Isomura / 6645～6649 (0037.jp2)<4371428> -- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams/Akira Uedono ; Hisayoshi Itoh ; Takeshi Ohshima / 6650～6660 (0040.jp2)<4371429> -- A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation/Akira Uedono ; Kazuo Ozaki ; Hiroji Ebe / 6661～6667 (0045.jp2)<4371430> -- Growth and Characterization of CuInS2 Films grown by Rf Ion-Plating/Ken-ichi Kondo ; Susumu Nakamura ; Hiroyuki Sano / 6668～6671 (0049.jp2)<4371431> -- ZnSe／ZnS Distributed Bragg Reflectors in the Blue Region Grown on(311)B GaAs Substrates/Takehiko Tawara ; Munetaka Arita ; Katsuhiro Uesugi / 6672～6676 (0051.jp2)<4371432> -- Coulomb Blockade in a Laterally-Confined Double-Barrier Heterostructure with a Doped, Wide Well/Pawel J.A. Piotrowicz ; John R.A. Cleaver / 6677～6681 (0053.jp2)<4371433> -- Influence of Near-Surface Defects in Si Induced by Reactive Ion Etching on the Electrical Properties of the Pt／n-Si Interface/Masato Koyama ; Chon-wa Cheong ; Koji Yokoyama / 6682～6686 (0056.jp2)<4371434> -- An Approach to Study Band-gap and Interface States in a-Si:H p-i-n Solar Cells/Viresh Dutta ; R.V.R. Murthy / 6687～6693 (0058.jp2)<4371435> -- Heterojunction Bipolar Transistor with an Additional Minority Carrier Reflection Barrier in the Emitter/Eng Fong Chor ; Cai Jun Peng / 6694～6698 (0062.jp2)<4371436> -- The Most Essential Factor for High-Speed, Low-Power 0.35μm Complementary Metal-Oxide-Semiconductor Circuits Fabricated on Separation-by-Implanted-Oxygen(SIMOX)Substrates/Akira Yoshino ; Kouichi Kumagai ; Nobuhisa Hamatake / 6699～6705 (0064.jp2)<4371437> -- Performance of Single-Electron Transistor Logic Composed of Multi-gate Single-electron Transistors/Moon-Young Jeong ; Yoon-Ha Jeong ; Sung-Woo Hwang / 6706～6710 (0068.jp2)<4371438> -- Silicon Oxynitride Waveguides for Optoelectronic Integrated Circuits/O.P. Agnihotri ; Rajeev Tyagi ; Isamu Kato / 6711～6713 (0070.jp2)<4371439> -- Deposition of Tantalum Oxide Films by UV Laser Reactive Ablation in O3 Ambient/Fu Zhengwen ; Zhou Mingfei ; Qin Qizong / 6714～6717 (0072.jp2)<4371440> -- Positive Charge Generation at a SiO2／Si Interface due to Bombardment with Metastable Atoms/Tetsuo Ono ; Naoshi Itabashi ; Isao Ochiai / 6718～6721 (0074.jp2)<4371441> -- Striations on Si Trench Sidewalls Observed by Atomic Force Microscopy (Short Note)/Akihiro YAHATA ; Satoshi URANO ; Tomoki INOUE / 6722～ (0076.jp2) -- Experimentally Proven Equation for the Collector-Depletion-Layer Transit Time of npn Bipolar Transistors (Short Note)/Kazuhiro MOCHIZUKI ; Takashi UCHINO ; Tohru NAKAMURA / 6724～ (0077.jp2) -- Laser-Induced Reversion of Photodarkening in CdS-Doped Glass (Short Note)/Tadaki MIYOSHI ; Koji NITTA ; Hiroyuki OHKUNI ; Fumihiko IKEDA ; Naoto MATSUO / 6726～ (0078.jp2) -- P-type AlAs Growth on a GaAs (311)B Substrate Using Carbon Auto-Doping for Low Resistance GaAs／AlAs Distributed Bragg Reflectors (Short Note)/Akimasa MIZUTANI ; Nobuaki HATORI ; Noriyuki OHNOKI ; Nobuhiko NISHIYAMA ; Nobuyuki OHTAKE ; Fumio KOYAMA ; Kenichi IGA / 6728～ (0079.jp2) -- Superconductors/ / 6730～ (0080.jp2) -- Phase Diagrams in the Solid Solution Nd-Ba-Cu-O System and NdBa2Cu3O7-δ Single Crystals Growth by the Traveling-Solvent Floating-Zone Method/Kiyoshi Kuroda ; Kazuhisa Itoi ; Jun-ichi Okano / 6730～6736 (0080.jp2)<4371442> -- Large Inductance Superconducting Quantum Interference Device Magnetometer for Magnetoencephalography Measurement/Rashdi Shah Ahmad ; Masateru Kubo ; Yoshihiro Hirata / 6737～6741 (0083.jp2)<4371443> -- Magnetism/ / 6742～ (0086.jp2) -- Optimum Thickness of Magnetic Layer for Short-Wavelength Magnetic Recording/Noriyuki Kitaori ; Osamu Yoshida ; Hirohide Mizunoya / 6742～6745 (0086.jp2)<4371444> -- Physical Properties of CoFe／IrMn Spin-Valves Prepared Using Ion Beam Sputtering with an Xe-H2 Mixture Gas/Takashi Umemoto ; Atsushi Maeda ; Seiichirou Takahashi / 6746～6748 (0088.jp2)<4371445> -- Direct Overwrite Magneto-Optical Disks with Double Mask Type Magnetically Induced Super Resolution/Yoshio Fujii ; Takashi Tokunaga ; Koichi Yamada / 6749～6753 (0089.jp2)<4371446> -- Optics and Quantum Electronics/ / 6754～ (0092.jp2) -- Second-Harmonic Generation from Single Crystals of N-Substituted 4-Nitroanilines/Hideki Hashimoto ; Yoshihiro Okada ; Hisashi Fujimura / 6754～6760 (0092.jp2)<4371447> -- High Stability Resonator for Pulsed Solid State Lasers/Hong Chu ; Young Min Jhon ; Sang Sam Choi / 6761～6763 (0095.jp2)<4371448> -- Excitation of Phonon-Polaritons with Asymmetric Transient Grating/Hitoshi Kawashima ; Fumio Sasaki ; Shunsuke Kobayashi / 6764～6767 (0097.jp2)<4371449> -- Femtosecond Optical Pulse Compressor Using CS2 Liquid-Core Fiber with Negative Delayed Nonlinear Response/Yasuhiro Sato ; Ryuji Morita ; Mikio Yamashita / 6768～6774 (0099.jp2)<4371450> -- The Dependence of the Diffusion Coefficient on the Proton Concentration in the Proton Exchange of LiNbO3/Kenchi Ito ; Kazumi Kawamoto / 6775～6780 (0102.jp2)<4371451> -- The Effect of Hydrogen on Refractive Index Profiles of Annealed Proton-Exchanged Z-Cut LiNbO3/Chi-Yen Shen ; Shuming Tong Wang ; Ren-Chang Chu / 6781～6784 (0105.jp2)<4371452> -- KrF-Excimer-Laser Induced Absorption in Synthetic Fused Silica (Short Note)/Naoyoshi KAMISUGI ; Nobu KUZUU ; Yoshinao IHARA ; Takayuki NAKAMURA / 6785～ (0107.jp2) -- Optical Properties of Condensed Matter/ / 6787～ (0108.jp2) -- Near Band-gap Photoluminescence Peak of Ge-doped GaAs/Taketo Watanabe ; Masashi Suezawa / 6787～6792 (0108.jp2)<4371453> -- Synthesis of Solid Solutions Based on the Akermanite and／or Hardystnite Systems and Their Fluorescence Properties/Satoru Kakitani ; Hiroshi Ishii ; Kazuhiro Yamaguchi / 6793～6797 (0111.jp2)<4371454> -- Quantitative Analysis of Cell Gap Margin for Uniform Optical Properties Using In-Plane Switching of Liquid Crystals/Masahito Oh-e ; Katsumi Kondo / 6798～6803 (0114.jp2)<4371455> -- Optical Properties of Proton-Exchanged LiNbO3 Using Capric Acid/Chi-Yen Shen ; Cwo-Hwa Liou ; Ren-Chang Chu / 6804～6806 (0117.jp2)<4371456> -- Electrical Properties of Condensed Matter/ / 6807～ (0118.jp2) -- Relation between the Metastability and the Configuration of Iron-Acceptor Pairs in Silicon/Hideki Takahashi ; Masashi Suezawa ; Koji Sumino / 6807～6813 (0118.jp2)<4371457> -- Microwave Dielectric Properties of the(1-x)La2／3TiO3-xLaAlO3 System/Jong H. Moon ; Hyun S. Park ; Kyung T. Lee / 6814～6817 (0122.jp2)<4371458> -- Structure and Dielectric Properties of(Ca1-xNd2x／3)TiO3/Masashi Yoshida ; Naoki Hara ; Takahiro Takada / 6818～6823 (0124.jp2)<4371459> -- Improvements of the Properties of Chemical-Vapor-Deposited(Ba, Sr)TiO3 Films through Use of a Seed Layer/Young-Chul Choi ; Joon Lee ; Byung-Soo Lee / 6824～6828 (0127.jp2)<4371460> -- Acoustic Emission in Lead Lanthanum Zirconate Titanate PLZT(18／40／60)Ceramics with Small Electrostriction/Hideaki Aburatani ; John P. Witham ; Kenji Uchino / 6829～6831 (0129.jp2)<4371461> -- Structure and Mechanical and Thermal Properties of Condensed Matter/ / 6832～ (0131.jp2) -- Studies of Second Harmonic Generation in Liquid Crystal-Polymer Mixtures/Andy Ying-Guey Fuh ; Chi-Yen Huang ; Cheuk-Wah Lau / 6832～6838 (0131.jp2)<4371462> -- Temperature Dependence of the Dynamical Behavior of Holographic Gratings Formed in Polymer Dispersed Liquid Crystal Films/Andy Ying-Guey Fuh ; Ming-Shan Tsai ; Tsung-Chi Liu / 6839～6846 (0134.jp2)<4371463> -- Collective Fluctuation and Switching Behavior in an Antiferroelectric Smectic Subphase Appearing in the Devil′s Staircase/Kazuyuki Hiraoka ; Takayo Tsumita ; Yutaka Sugiyama / 6847～6852 (0138.jp2)<4371464> -- Acoustic Properties of the Interface of a Uniform Medium-2-2 Piezocomposite and the Field Distributions in the Composite/Qiming Zhang ; Xuecang Geng / 6853～6861 (0141.jp2)<4371465> -- Effect of Deposition Temperature on the Crystallization Mechanism of Amorphous Silicon Films on Glass/Jeong No Lee ; Bum Joo Lee ; Dae Gyu Moon / 6862～6866 (0146.jp2)<4371466> -- Surfaces, Interfaces, and Films/ / 6867～ (0148.jp2) -- Effect of Microwave Pulse on the Optical Properties of Hydrogenated Amorphous Silicon Thin Films Deposited by Electron Cyclotron Resonance Plasma/Ju-Hyeon Lee ; Il-Chae Jung ; Sang-Kook Park / 6867～6870 (0148.jp2)<4371467> -- New Liquid Precursors of Yttrium and Neodymium for Metalorganic Chemical Vapor Deposition/Yuzo Tasaki ; Mamoru Satoh ; Shuji Yoshizawa / 6871～6875 (0150.jp2)<4371468> -- Stability of(C6H5C2H4NH3)2Pb(BrxI4-x)Mixed Crystals/Nobuaki Kitazawa / 6876～6879 (0153.jp2)<4371469> -- Dielectric Properties of Pb(Zr, Ti)O3 Heterolayered Films Prepared by Sol-Gel Method/Sung-Gap Lee ; In-Gil Park ; Seon-Gi Bae / 6880～6883 (0155.jp2)<4371470> -- Chemical Vapor Deposition of Nickel Oxide Films from Bis-π-Cyclopentadienyl-Nickel/Wen-chang Yeh ; Masakiyo Matsumura / 6884～6887 (0157.jp2)<4371471> -- Preparation and Electrical Properties of Sol-Gel Derived Lead Zirconate Titanate Glass-Ceramic Thin Films on Metal Foil Substrates/Kunio Saegusa / 6888～6893 (0159.jp2)<4371472> -- Formation of Carbon Nitride Films by Helicon Wave Plasma Enhanced DC Sputtering/Jin Quin Zhang ; Yuichi Setsuhara ; Shoji Miyake / 6894～6899 (0162.jp2)<4371473> -- Selected-area Deposition of Diamond Films on Silicon Nitride-coated Silicon Substrates Using Negatively Biased Microwave Plasma Enhanced Chemical Vapor Deposition Technique/Yung-Hsin Chen ; Chen-Ti Hu ; I-Nan Lin / 6900～6904 (0165.jp2)<4371474> -- Improved Response Time of Al-Al2O3-Pd Tunnel Diode Hydrogen Gas Sensor/Sumio Okuyama ; Hirotake Usami ; Katsuro Okuyama / 6905～6908 (0167.jp2)<4371475> -- Effects of Seed Layers on the Characteristics of(Pb, La)(Zr, Ti)O3 Thin Films Prepared by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition/Joong-Shik Shin ; Won-Jong Lee / 6909～6914 (0169.jp2)<4371476> -- Contact Angle and Atomic Force Microscopy Study of Reactions of n-Alkyltrichlorosilanes with Muscovite Micas Exposed to Water Vapor Plasmas with Various Power Densities/Tohru Nakagawa ; Mamoru Soga / 6915～6921 (0172.jp2)<4371477> -- A Chemical Dry Etching of Si and SiO2 Substrates by F atoms in a Discharge Flow/Masaharu Tsuji ; Yukio Nishimura / 6922～6926 (0176.jp2)<4371478> -- Observation of Mixed Fatty Acid Monolayer at the Air-Water Interface Using Phase Contrast Microscopy/Hirotaka Hosoi ; Hideki Akiyama ; Eiji Hatta / 6927～6931 (0178.jp2)<4371479> -- Atomic Scale Indium Distribution in a GaN／In0.43Ga0.57N／Al0.1Ga0.9N Quantum Well Structure/Christian Kisielowski ; Zuzanna Liliental-Weber ; Shuji Nakamura / 6932～6936 (0181.jp2)<4371480> -- Ninety Degree Domains in RF-Sputtered BaTiO3 Thin Films on Platinum Substrates/Jin Wook Jang ; Woon Jo Cho ; Jong Ho Lee / 6937～6941 (0183.jp2)<4371481> -- Origin of(111)Twin Lamellae in BaTiO3 Thin Films on Platinum Substrates/Jin Wook Jang ; Woon Jo Cho ; Jong Ho Lee / 6942～6945 (0186.jp2)<4371482> -- Deposition Characteristics of(Ba, Sr)TiO3 Thin Films by Liquid Source Metal-Organic Chemical Vapor Deposition at Low Substrate Temperatures/Chang Seok Kang ; Hag-Ju Cho ; Cheol Seong Hwang / 6946～6952 (0188.jp2)<4371483> -- Influence of Annealing on Molecular Orientation of Rubbed Polyimide Film Observed by Reflection Ellipsometry/Ichiro Hirosawa ; Nobuyoshi Sasaki / 6953～6956 (0191.jp2)<4371484> -- Characterization of Cleaved GaAs Tips for Scanning Tunneling Microscopy/Masahiro Yoshita ; Takuji Takahashi / 6957～6961 (0193.jp2)<4371485> -- Nuclear Science, Plasmas, and Electric Discharges/ / 6962～ (0196.jp2) -- Employing Two Unique Schemes to Investigate the Beam Lifetime in Storage Rings/Ian C. Hsu / 6962～6964 (0196.jp2)<4371486> -- Hysteresis Phenomena at the Bunch Lengthening Process in the Accumulation Ring/Takao Ieiri / 6965～6977 (0197.jp2)<4371487> -- Axial Structures of the Alfven Ion Cyclotron Mode in the GAMMA10 Tandem Mirror/Akira Kumagai ; Makoto Ichimura ; Motoyuki Nakamura / 6978～6980 (0204.jp2)<4371488> -- Studies of a Magnetic Neutral Loop Discharge Based on Laser Diagnostics of Electron Behavior and Atomic Processes/Tatsuya Sakoda ; Takayuki Miyao ; Kiichiro Uchino / 6981～6985 (0205.jp2)<4371489> -- Interferometer Measurements in Pulsed Plasma Experiments/Igor V. Lisitsyn ; Susumu Kohno ; Toshinori Kawauchi / 6986～6991 (0208.jp2)<4371490> -- Simultaneous Measurements of Plasma Flow and Ion Temperature Using the Asymmetric Double Probe (Short Note)/Mitsuru MAEDA ; Kazuya UEHARA ; Hiroshi AMEMIYA / 6992～ (0211.jp2) -- Atoms, Molecules, and Chemical Physics/ / 6994～ (0212.jp2) -- Evaluation of Electrical Properties of Evaporated Thin Films of Metal-Free, Copper and Lead Phthalocyanines by In-Situ Field Effect Measurements/Kazuhiro Kudo ; Tsutomu Sumimoto ; Kouji Hiraga / 6994～6998 (0212.jp2)<4371491> -- The Analysis of Trace Impurities in Nitrogen Gas by High Pressure Ionization Mass Spectrometry/Yoshio Ishihara ; Hitomi Umehara ; Akira Nishina / 6999～7003 (0214.jp2)<4371492> -- Plasma Component Filtering through a Hole Using the Sheath Generated around the Hole on Surface Modification by RF Plasma/Yori Izumi ; Takeo Ohte ; Akira Kojima / 7004～7008 (0217.jp2)<4371493> -- Instrumentation, Measurement, and Fabrication Technology/ / 7009～ (0219.jp2) -- Micromachined Traveling Wave Motors:Three Dimensional Mechanical Optimization and Miniaturization Limits Evaluation/Patrice Minotti ; Pierre Cusin ; Patrice Le Moal / 7009～7018 (0219.jp2)<4371494> -- Observation of Electric Fields at Surface and Interface of Doped GaAs／Semi-insulating GaAs Structures by Fast Fourier Transformed Photoreflectance/Jiti Nukeaw ; Yasufumi Fujiwara ; Yoshikazu Takeda / 7019～7023 (0224.jp2)<4371495> -- Range-resolved Image Detection of Laser-induced Fluorescence of Natural Trees for Vegetation Distribution Monitoring/Yasunori Saito ; Ken-ichiro Hatake ; Eiji Nomura / 7024～7027 (0227.jp2)<4371496> -- Halo Formation from Mismatched Axisymmetric Beams in a Periodic Focusing Channel/Masanori Ikegami ; Hiromi Okamoto / 7028～7034 (0229.jp2)<4371497> -- Improved Properties of Silicon Nitride Films Prepared by the Catalytic Chemical Vapor Deposition Method/Shinya Okada ; Hideki Matsumura / 7035～7040 (0232.jp2)<4371498> -- Formation of a Positive Photoresist Thin Film by Spin Coating:Influence of Atmospheric Humidity/Toshio Yada ; Taro Maejima ; Masaru Aoki / 7041～7047 (0235.jp2)<4371499> -- Enhancement of the 15.4 nm Line of the Lithiumlike Aluminum Recombining Plasma Laser using a Half Cavity (Short Note)/Tetsuya KAWACHI ; Kozo ANDO ; Hitoshi OYAMA ; Tamio HARA ; Yoshinobu AOYAGI / 7048～ (0239.jp2) -- Influence of Gas Flow Conditions on Cluster Size Distribution in the Gas Evaporation Method (Short Note)/Kenji KOGA ; Takuji IKEDA ; Ken-ichi OHSHIMA ; Harutoshi TAKEO / 7050～ (0240.jp2) -- General Physics/ / 7052～ (0241.jp2) -- Stability, Bifurcation and Chaos of a Pendulum on a Rotating Arm/Zheng-Ming Ge ; Fu-Neng Ku / 7052～7060 (0241.jp2)<4371500> -- Spectral Properties of Cavity Radiation:Nonuniversal Characteristics/Michio Sasanuma ; Takashi Onoue ; Katsuhiro Nakamura / 7061～7063 (0245.jp2)<4371501> -- Frequency Conversion of Magnetostatic Waves through Nonlinear Magnetization/Qi Wang ; Chun-fang Li ; Jia-shan Bao / 7064～7072 (0247.jp2)<4371502> -- Modal Precession of a Hemispherical Shell Gyro Excited by Electrostatic Field/Chan-Shin Chou ; Chia-Ou Chang / 7073～7082 (0251.jp2)<4371503> -- Cumulative Author Index of Volume 36, 1997, Part 1/ / 5～ (0256.jp2) -- Contents of Oyo Buturi/ / 19～ (0266.jp2) -- Contents of Journal of the Physical Society of Japan/ / 20～ (0266.jp2) -- Application Form for Publication in JJAP/ / 23～ (0268.jp2) Document Type: 雑誌 Language: English ; French ; German Rights: 国立国会図書館/図書館・個人送信限定 Notes: 国立国会図書館雑誌記事索引 35 (5A) 1996.05～46 (12) 2007.12 ; Description based on the latest issue ; Title varies slightly ; 29 (11) =341 ; With: Suppl ; 総目次・総索引あり

Klicken Sie ein Format an und speichern Sie dann die Daten oder geben Sie eine Empfänger-Adresse ein und lassen Sie sich per Email zusenden.

BibTeX Citavi, JabRef, u.a.
(Literaturverwaltung)

PDF kein Volltext!
(Merkzettel, Notizen)

RIS Endnote, Citavi u.a.
(Literaturverwaltung)

MODS
(XML zur Weiterverarbeitung)

oder

Wählen Sie das für Sie passende Zitationsformat und kopieren Sie es dann in die Zwischenablage, lassen es sich per Mail zusenden oder speichern es als PDF-Datei.

Gewünschter Zitations-Stil:

oder

Bitte prüfen Sie, ob die Zitation formal korrekt ist, bevor Sie sie in einer Arbeit verwenden. Benutzen Sie gegebenenfalls den "Exportieren"-Dialog, wenn Sie ein Literaturverwaltungsprogramm verwenden und die Zitat-Angaben selbst formatieren wollen.

Japanese journal of applied physics. JJAP : Japanese journal of applied physics