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Titel:	Japanese journal of applied physics
Link:	View record in National Diet Library Digital Collections (Volltext)
Quelle:	20Supplement 20-1;1981; Jg. 20Supplement 20-1;1981 (1981-03-01)
Veröffentlichung:	Tokyo: Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyo, 1981
Medientyp:	serialPeriodical
Umfang:	v. ; 30 cm
ISSN:	0021-4922 (print)
Sonstiges:	Nachgewiesen in: National Diet Library Digital Collections - 国立国会図書館デジタルコレクション Sprachen: English, French, German Contents Note: CONTENTS/ / (0006.jp2) -- A-0:OPENING SESSION/ / 1～ (0008.jp2) -- (SPECIAL) VLSI and Artificial Intelligence-Problems in the '80s the Computer Industry Will Face-(Invited)/T. KOBAYASHI / 3～ (0009.jp2) -- 1. Heterostructures for Everything: Device Principle of the 1980's? (Invited)/H. KROEMER / 9～ (0012.jp2) -- A-1: Si PROCESS TECHNOLOGY I/ / 15～ (0015.jp2) -- 1. MOSFET Development in IBM-1963 to Present (Invited)/D. L. CRITCHLOW / 17～ (0016.jp2) -- 2. Wafer Bow and Warpage (Invited)/S. TAKASU ; H. OTSUKA ; N. YOSHIHIRO ; T. OKU / 25～ (0020.jp2) -- A-2: Si PROCESS TECHNOLOGY II/ / 31～ (0023.jp2) -- 1. Thermal Nitridation of Silicon in Advanced LSI Processing (Invited)/T. ITO ; H. ISHIKAWA ; Y. FUKUKAWA / 33～ (0024.jp2) -- 2. Silicon Graphoepitaxy (Invited)/M. W. GEIS ; D. A. ANTONIADIS ; D. J. SILVERSMITH ; R. W. MOUNTAIN ; H. I. SMITH / 39～ (0027.jp2) -- 3. Oriented Crystal Growth of Si on SiO₂ Patterns by Pulse Ruby Laser Annealing/M. TAMURA ; H. TAMURA ; M. MIYAO ; T. TOKUYAMA / 43～ (0029.jp2) -- 4. Formation of a Double-Hetero Si／CoSi₂／Si Structure Using Molecular Beam and Solid Phase Epitaxies/S. SAITOH ; H. ISHIWARA ; S. FURUKAWA / 49～ (0032.jp2) -- 5. A New Self-Aligned Framed Mask Method for Selective Oxidation/K. MINEGISHI ; K. IMAI ; K. KIUCHI ; K. HIRATA ; Y. YORIUME / 55～ (0035.jp2) -- 6. Negative Patterning of AZ1350J by Electron-Beam Desensitization of Photo-Sensitive Compound/K. MOCHUI ; Y. MARUYAMA ; F. MURAI ; S. OKAZAKI ; Y. TAKEDA ; S. ASAI / 63～ (0039.jp2) -- 7. High Resolution Fabrication of Submicron Structures by Ion Beam Lithography/K. MORIWAKI ; H. ARITOME ; S. NAMBA / 69～ (0042.jp2) -- A-3: SILICON TRANSISTORS／POWER DEVICES/ / 73～ (0044.jp2) -- 1. A SIPOS-Si Heterojunction Transistor (Invited)/T. MATSUSHITA ; H. HAYASHI ; N. OH-UCHI ; H. YAMOTO / 75～ (0045.jp2) -- 2. V-Bipolar Device Utilizing Built-in Stress Gradient/Y. KANDA / 83～ (0049.jp2) -- 3. Gain Improvement by Self-Neutralization of Microwave SIT/M. AIGA ; Y. HIGAKI ; M. KATO ; Y. YUKIMOTO / 87～ (0051.jp2) -- 4. Design Considerations for High Power GTOs (Invited)/M. AZUMA ; M. KURATA ; H. OHASHI / 93～ (0054.jp2) -- 5. 4kV, 1500 A Light Triggered Thyristor/A. TADA ; A. KAWAKAMI ; T. MIYAZIMA ; T. NAKAGAWA ; K. YAMANAKA ; K. OHTAKI / 99～ (0057.jp2) -- 6. A High Current Gain and High Speed Power Gate Associated Transistor/H. KONDO ; Y. YUKIMOTO / 105～ (0060.jp2) -- 7. 150 V High Voltage Linear IC Technology/I. IMAIZUMI ; M. KIMURA ; M. YOSHIMURA ; T. YAMAGUCHI / 111～ (0063.jp2) -- A-4: MOS／BIPOLAR LSI/ / 115～ (0065.jp2) -- 1. High Speed MoSi₂-Gate CMOS／SOS Devices/Y. MIZUTANI ; K. MAEGUCHI ; T. MOCHIZUKI ; M. KIMURA ; M. ISOBE ; Y. UCHIDA ; H. TANGO / 117～ (0066.jp2) -- 2. High Speed 4 kbit Static RAM with Silicide Coated Wiring/M. MORIMOTO ; M. SUGIMOTO ; K. TERADA ; K. TAKAHASHI ; T. ISHIJIMA ; H. MUTA ; S. SUZUKI / 123～ (0069.jp2) -- 3. Custom LSI Process with a Micron Geometry, Partially Using Electron Beam Direct Writing/N. ENDO ; Y. KUROGI ; K. SUZUKI ; M. SUGIMOTO ; M. MORIMOTO ; Y. IIDA ; K. MORI / 129～ (0072.jp2) -- 4. N-Channel MNOS EAROM for TV Electronic Tuning System/S. SAITO ; K. HASHIMOTO ; Y. UCHIDA ; N. ENDO / 135～ (0075.jp2) -- 5. Soft Error Improvement in MOS RAM's by the Use of Epitaxial Substrate/S. SATOH ; M. DENDA ; S. TAKANO ; T. FUKUMOTO ; N. TSUBOUCHI / 143～ (0079.jp2) -- 6. Flat Emitter Transistor with Self-Aligned Base/T. FUJITA ; H. YAMADA ; T. KOMEDA ; T. TAKEMOTO / 149～ (0082.jp2) -- 7. High Speed Bipolar ICs Using Super Self-Aligned Process Technology/T. SAKAI ; Y. KOBAYASHI ; H. YAMAUCHI ; M. SATO ; T. MAKINO / 155～ (0085.jp2) -- 8. A High Performance I²L Compatible with Subnanosecond ECL Devices/T. HIRAO ; K. KIJIMA ; K. MURAKAMI ; H. SAKURAI ; Y. AKASAKA ; H. NAKATA / 161～ (0088.jp2) -- B-1: FIBER OPTICS/ / 167～ (0091.jp2) -- 1. Fiber Optics R & D in the 1980's (Invited)/C. KAO / 169～ (0092.jp2) -- 2. Recent Progress in VAD Fiber Fabrication Process (Invited)/N. INAGAKI ; T. EDAHIRO ; M. NAKAHARA / 175～ (0095.jp2) -- B-2: OPTOELECTRONIC DEVICES/ / 181～ (0098.jp2) -- 1. LPE and Characteristics of GaInAsP／InP 1.5 μm Region Laser Diodes (Invited)/H. NAGAI / 183～ (0099.jp2) -- 2. Low EPD and High Avalanche Multiplication of Lattice-Mismatched In₀.₅₂Ga₀.₄₈As on InP Substrate/Y. TAKEDA ; A. SASAKI / 189～ (0102.jp2) -- 3. Integration of a Laser Diode and a Twin FET/H. MATSUEDA ; T. FUKUZAWA ; T. KURODA ; M. NAKAMURA / 193～ (0104.jp2) -- 4. In-Line Holographic Lenses of High Numerical Aperture/C. KOJIMA ; K. MIYAHARA ; K. HASEGAWA ; T. OTOBE ; H. OOKI / 199～ (0107.jp2) -- 5. Visible Semiconductor Laser (Invited)/W. SUSAKI ; S. TAKAMIYA / 205～ (0110.jp2) -- 6. LPE Growth and Photoluminescence of In₁₋ₓGaₓP₁₋[y]As[y] on GaAs/A. SUZUKI ; H. KYURAGI ; S. MATSUMURA ; H. MATSUNAMI / 211～ (0113.jp2) -- 7. Low-Threshold-Voltage AC Thin-Film Electroluminescent Device/K. OKAMOTO ; Y. NASU ; M. OKUYAMA ; Y. HAMAKAWA / 215～ (0115.jp2) -- B-3: GaAs DEVICES／DEFECT CHARACTERIZATION/ / 221～ (0118.jp2) -- 1. Ion Implantation into a Cr-Doped Semi-Insulating GaAs Substrate (Invited)/H. NISHI ; S. OKAMURA ; T. INADA ; H. HASHIMOTO / 223～ (0119.jp2) -- 2. Planar GaAs IC's Using Multiple Localized Ion-Implantation/H. KUSAKAWA ; K. SUYAMA ; S. OKAMURA ; M. FUKUTA / 229～ (0122.jp2) -- 3. P-Column Gate Field Effect Transistor/K. ASAI ; Y. ISHII ; Y. KAWASAKI ; K. KURUMADA / 235～ (0125.jp2) -- 4. Improvement in CZ Silicon Wafer by Reducing Oxygen Impurity/K. HOSHIKAWA ; H. KOHDA ; K. IKUTA / 241～ (0128.jp2) -- 5. Non-Destructive Analysis of the Si-SiO₂ Interface by Electron Energy Loss Spectroscopy Study/T. ITO ; Y. KATAOKA ; M. IWAMI ; A. HIRAKI / 249～ (0132.jp2) -- 6. Effect of Long Term Stress on Hot Electron Trapping/H. MATSUMOTO ; K. SAWADA ; S. ASAI ; M. HIRAYAMA ; K. NAGASAWA / 255～ (0135.jp2) -- 7. Isothermal Capacitance Transient Spectroscopy/H. OKUSHI ; Y. TOKUMARU / 261～ (0138.jp2) -- B-4: AMORPHOUS SILICON／SOLAR CELLS AND SENSORS/ / 265～ (0140.jp2) -- 1. Optical, Electrical and Structural Properties of Plasma-Deposited Amorphous Silicon (Invited)/K. TANAKA ; K. NAKAGAWA ; A. MATSUDA ; M. MATSUMURA ; H. YAMAMOTO ; S. YAMASAKI ; H. OKUSHI ; S. IIZIMA / 267～ (0141.jp2) -- 2. Properties of a Fluorinated Heat-Resisting Amorphous-Silicon Containing No Hydrogen/H. MATSUMURA ; S. FURUKAWA / 275～ (0145.jp2) -- 3. Novel Deposition Technique of a-Si:H -Silane Glow Discharge in Magnetic Field-/T. HAMASAKI ; M. HIROSE ; H. KURATA ; M. TANIGUCHI ; Y. OSAKA / 281～ (0148.jp2) -- 4. Improvement of the Open Circuit Voltage of Amorphous Silicon Solar Cells/S. KANEKO ; T. SAITO / 287～ (0151.jp2) -- 5. Amorphous SiGe: H for High Performance Solar Cells/G. NAKAMURA ; K. SATO ; Y. YUKIMOTO ; K. SHIRAHATA ; T. MURAHASHI ; K. FUJIWARA / 291～ (0153.jp2) -- 6. Fabrication and Properties of Diffused Solar Cells Using Solar-Grade Silicon Prepared by a Fluidized-Bed Reactor/S. MATSUBARA ; T. WARABISAKO ; E. KURODA ; T. SAITOH ; T. TOKUYAMA ; Y. ENOMOTO ; K. KANEKO ; N. HASEGAWA / 297～ (0156.jp2) -- 7. Electrophotographic Properties of RF Glow Discharge-Produced Amorphous Si: H Film/N. YAMAMOTO ; Y. NAKAYAMA ; K. WAKITA ; M. NAKANO ; T. KAWAMURA / 305～ (0160.jp2) -- 8. A Proposed Novel Amorphous-Silicon Image Sensor/M. MATSUMURA ; H. HAYAMA ; Y. NARA ; K. ISHIBASHI / 311～ (0163.jp2) -- 9. IR-OPFET: Infrared Sensor Using PbTiO₃ Pyroelectric Film/M. OKUYAMA ; Y. MATSUI ; H. SETO ; Y. HAMAKAWA / 315～ (0165.jp2) -- C-4: JOSEPHSON DEVICES/ / 321～ (0168.jp2) -- 1. SQUIDs as Potential Elements in Josephson Computers (Invited)/S. HASUO ; H. SUZUKI ; T. IMAMURA ; T. YAMAOKA / 323～ (0169.jp2) -- 2. New Type of Nb Microbridges/K. GAMO ; K. ARIMOTO ; S. NAMBA / 331～ (0173.jp2) -- 3. Nb Weak Links with Three Dimensional Structure/Y. TAZO ; S. UEHARA / 337～ (0176.jp2) -- 4. An Improved Josephson Interferometer Memory Cell for Nondestructive Read-Out/M. YAMAMOTO ; A. ISHIDA / 343～ (0179.jp2) -- 5. A Two-Josephson-Junction Memory Cell with Nondestructive Readout/I. KUROSAWA ; M. NITTA / 347～ (0181.jp2) -- PANEL DISCUSSION/ / 353～ (0184.jp2) -- “How and When will Mega-Bit Memories Come Out?”/M. WATANABE ; Y. NISHI ; Y. GAMO ; S. YAMAMOTO ; N. IEDA ; J. BARNES ; T. MASUHARA ; H. YAMAMOTO ; H. ISHIKAWA / 355～ (0185.jp2) -- LATE NEWS/ / 361～ (0188.jp2) -- Titles of Late News/ / 363～ (0189.jp2) Document Type: 雑誌 Language: English ; French ; German Rights: 国立国会図書館/図書館・個人送信限定 Notes: 国立国会図書館雑誌記事索引 1 (1) 1962.07～3 (3) 1964.03 ; Description based on the latest issue ; With: Index ; Suppl ; 総目次・総索引あり

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Japanese journal of applied physics