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Titel:	Japanese journal of applied physics : JJAP
Autor/in / Beteiligte Person:	応用物理学会
Link:	View record in National Diet Library Digital Collections (Volltext)
Quelle:	48(2);February 2009; Jg. 48(2);February 2009 (2009-02-01)
Veröffentlichung:	Tokyo: The Japan Society of Applied Physics, 2009
Medientyp:	serialPeriodical
Umfang:	v. ; 30cm
ISSN:	0021-4922 (print)
Sonstiges:	Nachgewiesen in: National Diet Library Digital Collections - 国立国会図書館デジタルコレクション Sprachen: English Contents Note: CONTENTS/ / (0185.jp2) -- Rapid Communications/ / 020201-1～ (0002.jp2) -- UV-induced variation of interface potential in AlOx／n-GaN structure/Chihoko Mizue ; Marcin Miczek ; Junji Kotani / 020201-1～3 (0002.jp2)<10157947> -- Systematic investigation of c-axis tilt in GaN and AlGaN grown on vicinal SiC(0001) substrates/Jun Suda ; Hiroki Miyake ; Koichi Amari / 020202-1～3 (0004.jp2)<10157954> -- Effects of surface oxidation of AlGaN on DC characteristics of AlGaN／GaN high-electron-mobility transistors/Masafumi Tajima ; Junji Kotani ; Tamotsu Hashizume / 020203-1～3 (0005.jp2)<10157962> -- Observation of dislocation motion in Si1-xGe[x] thin film on Si substrate by laser scattering method/Akito Hara ; Naoyoshi Tamura ; Tomoji Nakamura / 020204-1～3 (0007.jp2)<10157966> -- Dynamic characteristics of metal-induced laterally crystallized polycrystalline silicon thin-film transistor devices and circuits fabricated with asymmetric precrystallization/Wook-Jung Hwang ; Il-Suk Kang ; Jun-Mo Yang / 020205-1～3 (0008.jp2)<10157971> -- Novel Cs2CO3:Ag／Ag cathode for high-efficiency organic light-emitting diodes/Qian Liu ; Lian Duan ; Deqiang Zhang / 020206-1～3 (0010.jp2)<10157975> -- In situ auger electron spectroscopy study of the pentacene film grown on the SrTiO3(001) surface/Kozue Hotozuka ; Masao Katayama ; Yuji Matsumoto / 020207-1～3 (0011.jp2)<10157979> -- Screen-printed polymer: fullerene bulk-heterojunction solar cells/Bing Zhang ; Heeyeop Chae ; Sung Min Cho / 020208-1～3 (0013.jp2)<10157980> -- Reduction in contact resistance of pentacene thin-film transistors by formation of an organo-metal hybrid interlayer/Jin-Hyuk Bae ; Won-Ho Kim ; Chang-Jae Yu / 020209-1～3 (0014.jp2)<10157986> -- Switching of polymer-stabilized vertical alignment liquid crystal Pi cell-curing voltage and driving scheme effects/Chi-Yen Huang ; Wen-Yi Jhuang ; Chia-Ting Hsieh / 020210-1～3 (0016.jp2)<10157994> -- In situ observation of layer-by-layer growth in vapor deposition of organic thin films/Atsushi Kubono ; Yuko Minagawa ; Takaya Ito / 020211-1～3 (0017.jp2)<10157996> -- Patterning periodical motif on substrates using monolayer of microspheres: application in GaN light-emitting diodes/Chia-Hua Chan ; Chia-Hung Hou ; Chih-Kai Huang / 020212-1～3 (0019.jp2)<10158002> -- Preparation of double dye-layer structure of dye-sensitized solar cells from cocktail solutions for harvesting light in wide range of wavelengths/Yusuke Noma ; Keita Iizuka ; Yuhei Ogomi / 020213-1～3 (0020.jp2)<10158006> -- Use of Ga doping to suppress optical damage in near-stoichiometric LiNbO3 crystals/Masaru Nakamura ; Shunji Takekawa ; Yuowen Liu / 020214-1～3 (0022.jp2)<10158010> -- Effect of alignment layers on the response time in a half V-shaped ferroelectric liquid crystal cell/Chun-Hung Chiang ; Po-Chang Wu ; Jin-Jei Wu / 020215-1～3 (0023.jp2)<10158014> -- Depth discrimination enhanced computational integral imaging using random pattern illumination/Ganbat Baasantseren ; Jae-Hyeung Park ; Nam Kim / 020216-1～3 (0025.jp2)<10158018> -- Orientation of feeble magnetic panicles in dynamic magnetic fields/Tsunehisa Kimura / 020217-1～3 (0026.jp2)<10158022> -- Transparentization of tunnel-etched Al foil by anodic oxidation/Issei Mizuki ; Toshiaki Kondo ; Kazuyuki Nishio / 020218-1～3 (0028.jp2)<10158024> -- Continuum-based bridging model of nanoscale thin film considering surface effects/Maenghyo Cho ; Jinbok Choi ; Wonbae Kim / 020219-1～3 (0029.jp2)<10158030> -- Effect of Alignment Layers on Carbon-Nanotube-Doped Liquid Crystal Cells/Jy-Shan Hsu ; Wei-Ju Chang ; Chao-Yu Hu ; Hou-Che Li / 020220-1～ (0031.jp2) -- Mechanism of Bi precipitation in Sn65.4Bi34.6 eutectic system/Kiminori Sato ; Hideoki Murakami ; Koichiro Fujimoto / 020221-1～3 (0032.jp2)<10158035> -- Near-edge X-ray absorption fine-structure, X-ray photoemission, and Fourier transform infrared spectroscopies of ultrananocrystalline diamond／hydrogenated amorphous carbon composite films/Tsuyoshi Yoshitake ; Akira Nagano ; Shinya Ohmagari / 020222-1～3 (0033.jp2)<10158045> -- Electron spin resonance of X-ray-irradiated CdS-doped glass before heat treatment/Tadaki Miyoshi ; Kouto Migita ; Masakatsu Tamechika / 020223-1～3 (0035.jp2)<10158049> -- Electrical properties of Al／HfO2／n-GaN prepared by reactive sputtering method/Chuan-Feng Shih ; Wei-Min Li ; Shu-Chun Shu / 020224-1～3 (0036.jp2)<10158051> -- An improvement of Stillinger-Weber interatomic potential model for reactive ion etching simulations/Hiroaki Ohta ; Tatsuya Nagaoka ; Koji Eriguchi / 020225-1～3 (0038.jp2)<10158072> -- M-plane GaN grown on m-plane sapphire by hydride vapor phase epitaxy/Tiankai Zhu ; Denis Martin ; Nicolas Grandjean / 020226-1～3 (0039.jp2)<10158076> -- Regular Papers/ / 021001-1～ (0041.jp2) -- Semiconductors, dielectrics, and organic materials/ / 021001-1～ (0041.jp2) -- Enhancement of exciton-phonon interaction in InGaN quantum wells induced by electron-beam irradiation/Kai Ding ; Yiping Zeng ; Ruifei Duan / 021001-1～3 (0041.jp2)<10158080> -- Enhancement of light extraction from GaN-based light-emitting diodes by coating surface with Al2O3 powder/Tae Ki Kim ; Seung Hwan Kim ; Seong Seok Yang / 021002-1～3 (0042.jp2)<10158087> -- ZnO crystal growth by cold-wall chemical vapor transport/Koji Abe ; Yuta Banno ; Tomonari Sasayama / 021101-1～3 (0044.jp2)<10158092> -- Correlated band-edge emissions of ZnO nanorods and GaN underlying substrate/Jiqiang Ning ; Shijie Xu ; Rongxin Wang / 021102-1～4 (0045.jp2)<10158098> -- Study on charge trap layers in charge trap metal-oxide-semiconductor field effect transistor/Seung Su Cho ; Kyong Hee Joo ; In-Seok Yeo / 021201-1～4 (0047.jp2)<10158103> -- Investigation of minority carrier distribution in semiconductor-controlled rectifier devices and the impact on electrostatic discharge applications/Ya-Li Tai ; Jam-Wem Lee ; Chen-Hsin Lien / 021202-1～5 (0049.jp2)<10158110> -- Performance improvement of polycrystalline silicon nanowire thin-film transistors by a high-κ capping layer/Ko-Hui Lee ; Hsing-Hui Hsu ; Horng-Chih Lin / 021203-1～3 (0052.jp2)<10158116> -- Analysis of microwave absorption caused by free carriers in silicon/Toshiyuki Sameshima ; Hiromi Hayasaka ; Tomonori Haba / 021204-1～6 (0053.jp2)<10158121> -- Electrochemical and Raman-scattering characterizations of defects in polycrystalline silicon thin films formed by excimer-laser annealing, solid-phase crystallization, and continuous-wave laser lateral crystallization/Kuninori Kitahara ; Yasutaka Ohashi ; Kenichi Yamamoto / 021205-1～6 (0056.jp2)<10158129> -- Impact of mechanical stress on hot-carrier lifetime and time-dependent dielectric breakdown in downscaled complimentary metal-oxide-semiconductor/Eiji Morifuji / 021206-1～5 (0059.jp2)<10158132> -- Investigation of discrete dopant fluctuation effects in sub-45-nm silicon-oxide-nitrid-oxide-silicon flash memory cell/Yi-Ying Liao ; Sheng-Fu Horng / 021207-1～4 (0062.jp2)<10158138> -- Characterization and analyses of interface structures in directly bonded Si(011)／Si(001) substrates/Eiji Toyoda ; Akira Sakai ; Hiromichi Isogai / 021208-1～4 (0064.jp2)<10158144> -- Mechanical bending cycles of hydrogenated amorphous silicon layer on plastic substrate by plasma-enhanced chemical vapor deposition for use in flexible displays/Min-Hung Lee ; Shu-Tong Chang ; Yi-Chun Wu / 021301-1～4 (0066.jp2)<10158151> -- Point defect characteristics of high-κ double rare-earth-doped BaTiO3 ceramics with diffuse phase transition by electron spin resonance/Da-Yong Lu ; Masayuki Toda ; Takeaki Ogata / 021401-1～4 (0068.jp2)<10158155> -- Optimization of deposition process and microscopic characterization of highly oriented aluminum nitride thin films for bimorph structures of piezoelectric tunable capacitors/Toshihiko Nagano ; Michihiko Nishigaki ; Kazuhiko Itaya / 021402-1～7 (0070.jp2)<10158162> -- Effective Hamiltonian approach to studying the field-induced structural phase transition of BaTiO3/Yukihiro Okuno ; Yukio Sakashita / 021403-1～7 (0073.jp2)<10158168> -- Analysis of pentacene field-effect transistor with a ferroelectric P(VDF-TeFE) gate insulator as an element of Maxwell-Wagner effect system/Ryousuke Tamura ; Shuhei Yoshita ; Eunju Lim / 021501-1～4 (0077.jp2)<10158175> -- Demonstration of organic light emitting diodes fabricated on flexible Al2O3-embedded poly(dimenthylsiloxane) substrates/Yu-Hung Cheng ; Ching-Min Chen ; Chien-Hong Cheng / 021502-1～5 (0079.jp2)<10158179> -- Photocathode kinetics of phthalocyanine／fullerene with respect to the base electrode for the bilayer coating/Toshiyuki Abe ; Shunsuke Tobinai ; Keiji Nagai / 021503-1～4 (0081.jp2)<10158185> -- Probing electric field distribution in underlayer of an organic double-layer system by optical second-harmonic generation measurement/Yoshinori Shibata ; Motoharu Nakao ; Takaaki Manaka / 021504-1～5 (0083.jp2)<10158190> -- Work function modification of indium-tin oxide by surface plasma treatments using different gases/Kang-Pil Kim ; A. Mohammed Hussain ; Dae-Kue Hwang / 021601-1～3 (0086.jp2)<10158193> -- Photonics, quantum electronics, optics, and spectroscopy/ / 022101-1～ (0087.jp2) -- Demonstration of flat-band structure of two-dimensional photonic crystal directional coupler/Jun-ichiro Sugisaka ; Noritsugu Yamamoto ; Makoto Okano / 022101-1～5 (0087.jp2)<10158199> -- Generation and wavelength control of resonant luminescence from silicon photonic crystal microcavities with Ge dots/Jinsong Xia ; Ryuichiro Tominaga ; Seiji Fukamitsu / 022102-1～5 (0090.jp2)<10158205> -- Analysis of reverse-biased electrostatic-discharge-induced degradation of GaInAsP／InP buried heterostructure laser diode/Hiroyuki Ichikawa ; Akiko Kumagai ; Kotaro Hamada / 022201-1～6 (0092.jp2)<10158212> -- Electrically tunable and dual-wavelength semiconductor laser with a liquid crystal display/Kengo Murasawa ; Takehiko Hidaka / 022202-1～5 (0095.jp2)<10158216> -- ZnTe-based light-emitting diodes fabricated by solid-state diffusion of Al through Al oxide layer/Tooru Tanaka ; Mitsuhiro Nishio ; Qixin Guo / 022203-1～5 (0098.jp2)<10158223> -- Phase and amplitude control of free induction decay emitted from water vapor at 0.55 THz transition/Ryuzi Yano ; Kazuo Nakagawa ; Hiroyuki Shinojima / 022401-1～6 (0100.jp2)<10158229> -- Ultrafast exciton dynamics in a ZnO thin film/Hsiang-Chen Wang ; C. C. Yang ; Shih-Wei Feng / 022402-1～5 (0103.jp2)<10158235> -- Expansion of the illumination and reconstruction areas in reflection-type digital holography microscope system/Kyu-Hwan Choi ; Jung-Young Son ; Won-Gun Jang / 022501-1～7 (0106.jp2)<10158237> -- Enhancement of the direct symmetric splay to bend transition in liquid crystal cell/Bin Wang ; Yanli Zhang ; Yong-Kyu Jang / 022502-1～5 (0109.jp2)<10158244> -- Differential mode analysis of a polarization-maintaining graded-index plastic optical fiber using macrobending/Rei A. Furukawa ; Akihiro Tagaya ; Yasuhiro Koike / 022503-1～7 (0112.jp2)<10158249> -- Optical spectrum smoothing phenomena in harmonically mode-locked semiconductor-optical-amplifier-introduced hybrid-type fiber ring laser/Noriaki Onodera ; Kenichiro Tsuji ; Masaki Oiwa / 022504-1～7 (0115.jp2)<10158257> -- Spintronics, superconductivity, and strongly correlated materials/ / 023001-1～ (0119.jp2) -- In-plane uniaxial magnetic anisotropy of 〔(InγGa1-γ)1-xMn[x]〕As characterized by planar hall effect/Masafumi Yokoyama ; Shinobu Ohya ; Masaaki Tanaka / 023001-1～4 (0119.jp2)<10158264> -- Transmission Electron Microscopy and atomic force microscopy observation of air-processed GdBa2Cu3O7-δ superconductors doped with metal oxide nanoparticles (metal = Zr, Zn, and Sn)/Caixuan Xu ; Anming Hu ; Masaki Ichihara / 023002-1～6 (0121.jp2)<10158271> -- Raman, far infrared, and Mossbauer spectroscopy of CuFeS2 nanocrystallites/Chunrui Wang ; Shaolin Xue ; Junqing Hu / 023003-1～3 (0124.jp2)<10158275> -- Device physics and novel device structures/ / 024501-1～ (0125.jp2) -- Performance and design considerations of a novel dual-material gate carbon nanotube field-effect transistors: nonequilibrium green's function approach/Zahra Arefinia ; Ali A. Orouji / 024501-1～7 (0125.jp2)<10158285> -- Three-dimensional numerical simulation of phase-change memory cell with probe like bottom electrode structure/Yan Liu ; Zhitang Song ; Yun Ling / 024502-1～5 (0129.jp2)<10158289> -- Single-gated single-electron transfer in nonuniform arrays of quantum dots/Kiyohito Yokoi ; Daniel Moraru ; Maciej Ligowski / 024503-1～7 (0131.jp2)<10158294> -- Nanoscale science and technology/ / 025001-1～ (0135.jp2) -- Carbon nanotube Fabry-Perot device for detection of multiple single charge transitions/Takafumi Kamimura ; Yasuhide Ohno ; Kazuhiko Matsumoto / 025001-1～4 (0135.jp2)<10158302> -- Field emission stability of individual multi-walled carbon nanotubes/Tadashi Fujieda ; Makoto Okai ; Hiroshi Tokumoto / 025002-1～5 (0137.jp2)<10158306> -- Crystal growth, surfaces, interfaces, thin films, and bulk materials/ / 025501-1～ (0139.jp2) -- MgO microparticle deposition by radio frequency impulse discharge in a small-diameter tube/Takumasa Muraoka ; Satoru Iizuka / 025501-1～4 (0139.jp2)<10158330> -- Investigation of C60 epitaxial growth mechanism on GaAS substrates/Jiro Nishinaga ; Atsushi Kawaharazuka ; Yoshiji Horikoshi / 025502-1～5 (0141.jp2)<10158336> -- Characteristics of Cu-Zr thin film metallic glasses fabricated using a carousel-type sputtering system/Junpei Sakurai ; Seiichi Hata ; Akira Shimokohbe / 025503-1～6 (0144.jp2)<10158341> -- Comparison of tantalum nitride films for different NH3／H2／Ar reactant states in two-step atomic layer deposition/Jung-Dae Kwon ; Jungheum Yun ; Sang-Won Kang / 025504-1～5 (0147.jp2)<10158346> -- Electric characteristics of Li2O-doped TiO2 nanocrystalline film and its application to dye-sensitized solar cells/Masahiro Nada ; Tomohiro Gonda ; Qing Shen / 025505-1～4 (0149.jp2)<10158351> -- Simulation of noncontact atomic force microscopy of hydrogen- and methyl-terminated Si(001) surfaces/Akira Masago ; Satoshi Watanabe ; Katsunori Tagami / 025506-1～5 (0151.jp2)<10158357> -- Factors affecting extreme ultraviolet reflectivity of Mo／Si multilayer films synthesized by superconducting magnetron sputtering/Uichiro Mizutani ; Takashi Yamaguchi ; Tetsuya Tomofuji / 025507-1～6 (0154.jp2)<10158363> -- Plasmas, applied atomic and molecular physics, and applied nuclear physics/ / 026001-1～ (0157.jp2) -- New emissive probe measurements of electron temperature in two modes of radio-frequency plasmas/Kouta Kusaba ; Haruo Shindo / 026001-1～6 (0157.jp2)<10158366> -- Device processing, fabrication and measurement technologies, and instrumentation/ / 026501-1～ (0160.jp2) -- Surface cleaning of gold structure by annealing during fabrication of microelectromechanical system devices/Tomomi Sakata ; Yuichi Okabe ; Kei Kuwabara / 026501-1～3 (0160.jp2)<10158402> -- Single isolation structure for organic light-emitting diodes/Seungjun Yi ; Youn Soo Shin ; Cheol-Hee Moon / 026502-1～5 (0161.jp2)<10158404> -- Photoresist removal using atomic hydrogen generated by hot-wire catalyzer and effects on Si-wafer surface/Masashi Yamamoto ; Hideo Horibe ; Hironobu Umemoto / 026503-1～7 (0164.jp2)<10158407> -- Etching rate of silicon dioxide using chlorine trifluoride gas/Yutaka Miura ; Yu Kasahara ; Hitoshi Habuka / 026504-1～5 (0167.jp2)<10158409> -- Removal characteristics of resists having different chemical structures by using ozone and water/Hideo Horibe ; Masashi Yamamoto ; Yousuke Goto / 026505-1～4 (0170.jp2)<10158413> -- Soft X-ray microscope constructed with 130-nm spatial resolution using a high harmonic X-ray source/Deuk Su Kim ; Jong Ju Park ; Kyoung Hwan Lee / 026506-1～4 (0172.jp2)<10158419> -- Cross-disciplinary areas/ / 027001-1～ (0174.jp2) -- Noise properties of incubation-type planar ion channel biosensor/Toshifumi Asano ; Takuya Nakamura ; Akihiro Wakahara / 027001-1～4 (0174.jp2)<10158422> -- The effect of kinetic properties on statistical variations of ultrasound signals backscattered from flowing blood/Chih-Chung Huang ; Yi-Hsun Lin ; Shyh-Hau Wang / 027002-1～7 (0176.jp2)<10158428> -- Prediction and measurement of the size of thermal lesion induced by high intensity focused ultrasound in a tissue-mimicking phantom/Kang Il Lee ; Min Joo Choi / 027003-1～5 (0179.jp2)<10158431> -- Errata/ / 029201-1～ (0182.jp2) -- Erratum:“Doped-Dye Orientation Relative to Oriented Polyfluorene Host Film”〔47 (2008) 416〕/Nobutaka Tanigaki ; Claire Heck ; Toshiko Mizokuro ; Hideyuki Minato ; Masahiro Misaki ; Yuji Yoshida ; Reiko Azumi / 029201-1～ (0182.jp2) Document Type: 雑誌 Language: English Rights: 国立国会図書館/図書館・個人送信限定 Notes: 国立国会図書館雑誌記事索引 47 (1) (Special Issue) 2008.01～ ; Description based on the latest issue ; Issued in 2 parts

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Japanese journal of applied physics : JJAP