THREE-DIMENSIONAL MAGNETOMETER BASED ON HALL SENSORS INTEGRATED IN STANDARD CMOS TECHNOLOGY
In: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Jg. 0 (2019), Heft 7, S. 167-171
Online
academicJournal
Zugriff:
The results of the device simulation of a three-dimensional magnetometer based on Hall sensors integrated in a standard CMOS technology are presented. The Hall voltage vs magnetic field, Hall voltage vs magnetic field deviation angle, and sensitivity vs temperature curves were measured. The first-principles simulation of chalcogenide spinel CuCr2Se4 used in creation of a magnetic field concentrator was performed.
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THREE-DIMENSIONAL MAGNETOMETER BASED ON HALL SENSORS INTEGRATED IN STANDARD CMOS TECHNOLOGY
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Autor/in / Beteiligte Person: | D. HA. Dao ; Volchek, V. S. ; Baranava, M. S. ; I. Yu. Lovshenko ; Hvazdouski, D. C. ; Stempitsky, V. R. |
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Zeitschrift: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Jg. 0 (2019), Heft 7, S. 167-171 |
Veröffentlichung: | Educational institution «Belarusian State University of Informatics and Radioelectronics», 2019 |
Medientyp: | academicJournal |
ISSN: | 1729-7648 (print) |
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