Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits
In: IEEE Photonics Journal, Jg. 16 (2024), Heft 3, S. 1-9
Online
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Zugriff:
In this study, Green MicroLEDs with different H2 flow during the barrier growth are investigated. We observe that the Indium composition near V-pits affects potential barrier height of the sidewall multiple quantum wells (MQWs) thus has strong impact on screening effect of V-pits. EQE and relative IQE has a dramatically increase with more hydrogen flow during barrier growth, and thermal endurance and wavelength stability was also improved. The enhancement has been confirmed to come from the reduction of non-radiative recombination centers from small V-pits and higher potential barrier height on sidewall MQWs in V-shaped pits which screen dislocations (TDs). These results demonstrate the advantages of modification H2 flow during barrier growth and also provide a new concept to modulate potential barrier height of the sidewall MQWs for better screening effect for further improvement on MicroLEDs performance.
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Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits
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Autor/in / Beteiligte Person: | Liu, Hsin-Yu ; Zhang, Donghao ; Zhang, Zhongying ; Lai, Chaohsu ; Lin, Zongmin ; Lee, Chia-En ; Bao, Lijun ; Chang, Sheng-Po ; Chang, Shoou-Jinn |
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Zeitschrift: | IEEE Photonics Journal, Jg. 16 (2024), Heft 3, S. 1-9 |
Veröffentlichung: | IEEE, 2024 |
Medientyp: | academicJournal |
ISSN: | 1943-0655 (print) |
DOI: | 10.1109/JPHOT.2024.3386111 |
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