A 0.8 V, 14.76 nVrms, Multiplexer-Based AFE for Wearable Devices Using 45 nm CMOS Techniques
In: Micromachines, Jg. 14 (2023-09-01), Heft 10, S. 1816-1816
Online
academicJournal
Zugriff:
Wearable medical devices (WMDs) that continuously monitor health conditions enable people to stay healthy in everyday situations. A wristband is a monitoring format that can measure bioelectric signals. The main part of a wearable device is its analog front end (AFE). Wearables have issues such as low reliability, high power consumption, and large size. A conventional AFE device uses more analog-to-digital converters, amplifiers, and filters for individual electrodes. Our proposed MUX-based AFE design requires fewer components than a conventional AFE device, reducing power consumption and area. It includes a single-ended differential feedback operational transconductance amplifier (OTA) and n-pass MUX-based AFE circuits which are related to the emergence of low power, low area, and low cost AFE-integrated chips that are required for wearable biomedical applications. The proposed 6T n-pass multiplexer measures a gain of −68 dB across a frequency range of 100 kHz with a 136.5 nW power consumption and a delay of 0.07 ns. The design layout area is approximately 9.8 µm2 and uses 45 nm complementary metal oxide semiconductor (CMOS) technology. Additionally, the proposed single-ended differential OTA has an obtained input referred noise of 0.014 µVrms, and a gain of −5.5 dB, while the design layout area is about 2 µm2 and was designed with the help of the Cadence Virtuoso layout design tool.
Titel: |
A 0.8 V, 14.76 nVrms, Multiplexer-Based AFE for Wearable Devices Using 45 nm CMOS Techniques
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Autor/in / Beteiligte Person: | Tamilarasan, Esther ; Gracia Nirmala Rani Duraisamy ; Muthu Kumaran Elangovan ; Arun Samuel Thankmony Sarasam |
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Zeitschrift: | Micromachines, Jg. 14 (2023-09-01), Heft 10, S. 1816-1816 |
Veröffentlichung: | MDPI AG, 2023 |
Medientyp: | academicJournal |
ISSN: | 2072-666X (print) |
DOI: | 10.3390/mi14101816 |
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