Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives
In: Sensors, Jg. 10 (2010), Heft 12, S. 10571-10600
Online
academicJournal
Zugriff:
Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.
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Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives
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Autor/in / Beteiligte Person: | Sirleto, Luigi ; Rendina, Ivo ; Casalino, Maurizio ; Iodice, Mario ; Coppola, Giuseppe |
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Zeitschrift: | Sensors, Jg. 10 (2010), Heft 12, S. 10571-10600 |
Veröffentlichung: | MDPI AG, 2010 |
Medientyp: | academicJournal |
ISSN: | 1424-8220 (print) |
DOI: | 10.3390/s101210571 |
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