Exploration of Cd1−xZnxSe as a window layer for CIGS based solar cell with PEDOT: PSS as back surface field layer

This research investigates the potential of Cd _1−x Zn _x Se thin film for photovoltaic applications. The electrical behavior of CIGS based solar cell is examined with the novel Cd _1−x Zn _x Se as buffer layer material by Solar Cell Capacitance Simulator (SCAPS). The tunability of Cd _1−x Zn _x Se facilities to reduce the defects between absorber and buffer layer by determining the ideal conduction band offset. It is revealed that cross-over occurs between the p-type absorber and the metal back contact if the metal work function is below 4.6 eV. In this research, a thin PEDOT: PSS back surface (BSF) layer was integrated which enhances the device efficiency from 22.5 percent to 28.32% while retaining the metal work function at 5.1 eV. The trade-off between the use of metal having higher work function and inclusion of heavily doped BSF layer is one of the important findings of this research. These findings pave the way for Cd _1−x Zn _x Se to be commercially used as a buffer layer material for CIGS solar cell.