A physics-based numerical modeling of total ionizing dose effects in CMOS integrated circuits
In: Argentine Conference on Electronics (CAE); (2023-03-09) S. 41-45
Konferenz
Zugriff:
Titel: |
A physics-based numerical modeling of total ionizing dose effects in CMOS integrated circuits
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Autor/in / Beteiligte Person: | Cassani, M.V. ; Salomone, L. Sambuco ; Carbonetto, S. ; Redin, E. ; Faigon, A. ; Garcia-Inza, M. |
Quelle: | Argentine Conference on Electronics (CAE); (2023-03-09) S. 41-45 |
Veröffentlichung: | 2023 |
Medientyp: | Konferenz |
ISBN: | 979-8-3503-9954-7 (print) |
DOI: | 10.1109/CAE56623.2023.10086970 |
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