Extremely Large Breakdown to Snapback Voltage Offset $(\mathrm{V}_{\mathrm{t}1} > > \mathrm{V}_{\text{BD}})$: Another Way to Improve ESD Resilience of LDMOS Devices
In: IEEE International Reliability Physics Symposium (IRPS); (2023-03-01) S. 1-5
Konferenz
Zugriff:
Titel: |
Extremely Large Breakdown to Snapback Voltage Offset $(\mathrm{V}_{\mathrm{t}1} > > \mathrm{V}_{\text{BD}})$: Another Way to Improve ESD Resilience of LDMOS Devices
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Autor/in / Beteiligte Person: | Mishra, Aakanksha ; Kumar, B. Sampath ; Monishmurali, M. ; Suzaad, Shaik Ahamed ; Kumar, Shubham ; Sanjay, Kiran Pote ; Singh, Amit Kumar ; Gupta, Ankur ; Shrivastava, Mayank |
Quelle: | IEEE International Reliability Physics Symposium (IRPS); (2023-03-01) S. 1-5 |
Veröffentlichung: | 2023 |
Medientyp: | Konferenz |
ISBN: | 978-1-6654-5672-2 (print) |
ISSN: | 1938-1891 (print) |
DOI: | 10.1109/IRPS48203.2023.10118102 |
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