A 200-GHz Power Amplifier With 18.7-dBm Psat in 45-nm CMOS SOI: A Model-Based Large-Signal Approach on Cascaded Series-Connected Power Amplification
In: IEEE Journal of Solid-State Circuits, Jg. 59 (2024-06-01), Heft 6, S. 1631-1642
Online
academicJournal
Zugriff:
Titel: |
A 200-GHz Power Amplifier With 18.7-dBm Psat in 45-nm CMOS SOI: A Model-Based Large-Signal Approach on Cascaded Series-Connected Power Amplification
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Autor/in / Beteiligte Person: | Hassanzadehyamchi, S. ; Alizadeh, A. ; Niknejad, A.M. ; Momeni, O. |
Link: | |
Zeitschrift: | IEEE Journal of Solid-State Circuits, Jg. 59 (2024-06-01), Heft 6, S. 1631-1642 |
Veröffentlichung: | 2024 |
Medientyp: | academicJournal |
ISSN: | 0018-9200 (print) ; 1558-173X (print) |
DOI: | 10.1109/JSSC.2023.3339198 |
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