Simulation of Epitaxial Growth of Silicon Carbide in a Horizontal Hot-wall CVD Reaction Chamber
In: 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS); (2023-11-27) S. 14-17
Konferenz
Zugriff:
Titel: |
Simulation of Epitaxial Growth of Silicon Carbide in a Horizontal Hot-wall CVD Reaction Chamber
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Autor/in / Beteiligte Person: | Tian, Jing ; Tang, Zhuorui ; Tang, Hongyu ; Fan, Jiajie ; Zhang, Guoqi |
Quelle: | 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS); (2023-11-27) S. 14-17 |
Veröffentlichung: | 2023 |
Medientyp: | Konferenz |
ISBN: | 979-8-3503-8537-3 (print) |
DOI: | 10.1109/SSLChinaIFWS60785.2023.10399702 |
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