TID effects on a 110 nm CMOS technology for fully depleted monolithic sensors
In: 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS); (2022-10-03) S. 1-4
Konferenz
Zugriff:
Titel: |
TID effects on a 110 nm CMOS technology for fully depleted monolithic sensors
|
---|---|
Autor/in / Beteiligte Person: | Ratti, L. ; Giroletti, S. ; Manghisoni, M. ; Mattiazzo, S. ; Re, V. ; Torilla, G. ; Traversi, G. ; Vacchi, C. |
Quelle: | 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS); (2022-10-03) S. 1-4 |
Veröffentlichung: | 2022 |
Medientyp: | Konferenz |
ISBN: | 979-8-3503-7123-9 (print) |
ISSN: | 1609-0438 (print) |
DOI: | 10.1109/RADECS55911.2022.10412411 |
Sonstiges: |
|