Impact of the channel thickness fluctuation on the subthreshold swing of InGaAs HEMTs at cryogenic temperature down to4K for ultra-low power LNAs
In: International Electron Devices Meeting (IEDM); (2023-12-09) S. 1-4
Konferenz
Zugriff:
Titel: |
Impact of the channel thickness fluctuation on the subthreshold swing of InGaAs HEMTs at cryogenic temperature down to4K for ultra-low power LNAs
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Autor/in / Beteiligte Person: | Jeong, Jaeyong ; Kim, Jongmin ; Lee, Jisung ; Suh, Yoon-Je ; Rheem, Nahyun ; Kim, Seong Kwang ; Park, Juhyuk ; Kim, Bong Ho ; Kim, Joon Pyo ; Park, Seung-Young ; Kim, Sang ; Hyeon |
Quelle: | International Electron Devices Meeting (IEDM); (2023-12-09) S. 1-4 |
Veröffentlichung: | 2023 |
Medientyp: | Konferenz |
ISBN: | 979-8-3503-2767-0 (print) |
ISSN: | 2156-017X (print) |
DOI: | 10.1109/IEDM45741.2023.10413722 |
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