High-Endurance MoS2 FeFET with Operating Voltage Fess Than IV for eNVM in Scaled CMOS Technologies
In: International Electron Devices Meeting (IEDM); (2023-12-09) S. 1-4
Konferenz
Zugriff:
Titel: |
High-Endurance MoS2 FeFET with Operating Voltage Fess Than IV for eNVM in Scaled CMOS Technologies
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Autor/in / Beteiligte Person: | Lee, Tsung-En ; Chiang, Hung-Li ; Chang, Chih-Yu ; Su, Yuan-Chun ; Chang, Shu-Jui ; Wu, Jui-Jen ; Lin, Bo-Jiun ; Wang, Jer-Fu ; Haw, Shu-Chih ; Chiu, Shang-Jui ; Ching, He-Liang ; Lin, Yan-Gu ; Yun, Wei-Sheng ; Hsu, Chen-Feng ; Lee, Hengyuan ; Lee, Tung-Ying ; Passlack, Matthias ; Cheng, Chao-Ching ; Chang, Chih-Sheng ; Wong, H.-S. Philip ; Chang, Wen-Hao ; Chang, Meng-Fan ; Lin, Yu-Ming ; Radu, Iuliana P. |
Quelle: | International Electron Devices Meeting (IEDM); (2023-12-09) S. 1-4 |
Veröffentlichung: | 2023 |
Medientyp: | Konferenz |
ISBN: | 979-8-3503-2767-0 (print) |
ISSN: | 2156-017X (print) |
DOI: | 10.1109/IEDM45741.2023.10413873 |
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