Fabrication of High-Gain CMOS Inverter Based on Ambipolar WSe2 Negative-Capacitance FETs With Ferroelectric HfZrAlO as Gate Dielectric
In: IEEE Transactions on Electron Devices, Jg. 71 (2024-03-01), Heft 3, S. 2203-2209
Online
academicJournal
Zugriff:
Titel: |
Fabrication of High-Gain CMOS Inverter Based on Ambipolar WSe2 Negative-Capacitance FETs With Ferroelectric HfZrAlO as Gate Dielectric
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Autor/in / Beteiligte Person: | Tao, X. ; Jiang, W. ; Liu, L. ; Xu, J. |
Link: | |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 71 (2024-03-01), Heft 3, S. 2203-2209 |
Veröffentlichung: | 2024 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) ; 1557-9646 (print) |
DOI: | 10.1109/TED.2024.3356483 |
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