Leakage Performance of 4H-SiC CMOS Logic Circuits After Gamma Irradiation
In: IEEE Electron Device Letters, Jg. 45 (2024-04-01), Heft 4, S. 542-545
Online
academicJournal
Zugriff:
Titel: |
Leakage Performance of 4H-SiC CMOS Logic Circuits After Gamma Irradiation
|
---|---|
Autor/in / Beteiligte Person: | Zhang, L. ; Gu, Y. ; Ma, J. ; Hou, X. ; Wen, H. ; Hong, J. ; Liu, S. ; Liu, A. ; Huang, R. ; Bai, S. ; Sun, W. |
Link: | |
Zeitschrift: | IEEE Electron Device Letters, Jg. 45 (2024-04-01), Heft 4, S. 542-545 |
Veröffentlichung: | 2024 |
Medientyp: | academicJournal |
ISSN: | 0741-3106 (print) ; 1558-0563 (print) |
DOI: | 10.1109/LED.2024.3368527 |
Sonstiges: |
|