Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) With Ferroelectric Memcapacitor
In: IEEE Transactions on Electron Devices, Jg. 71 (2024-04-01), Heft 4, S. 2404-2410
Online
academicJournal
Zugriff:
Titel: |
Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) With Ferroelectric Memcapacitor
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Autor/in / Beteiligte Person: | Wang, X. ; Cui, B. ; Jing, L. ; Wu, M. ; Wen, Y. ; Wu, Y. ; Liu, J. ; Zhang, F. ; Lin, Z. ; Sun, Y. ; Ren, P. ; Ye, S. ; Wang, R. ; Ji, Z. ; Huang, R. |
Link: | |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 71 (2024-04-01), Heft 4, S. 2404-2410 |
Veröffentlichung: | 2024 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) ; 1557-9646 (print) |
DOI: | 10.1109/TED.2024.3367965 |
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