1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs
In: IEEE Journal of the Electron Devices Society, Jg. 12 (2024), S. 236-242
Online
academicJournal
Zugriff:
Titel: |
1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs
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Autor/in / Beteiligte Person: | Hirose, T. ; Okamoto, Y. ; Komura, Y. ; Mizuguchi, T. ; Saito, T. ; Ito, M. ; Kimura, K. ; Inoue, H. ; Onuki, T. ; Ando, Y. ; Sawai, H. ; Murakawa, T. ; Kunitake, H. ; Kimura, H. ; Matsuzaki, T. ; Ikeda, M. ; Yamazaki, S. |
Link: | |
Zeitschrift: | IEEE Journal of the Electron Devices Society, Jg. 12 (2024), S. 236-242 |
Veröffentlichung: | 2024 |
Medientyp: | academicJournal |
ISSN: | 2168-6734 (print) |
DOI: | 10.1109/JEDS.2024.3372053 |
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